WPMtek-Wei-Pan-Microelectronics-S9012
| Part # | WPMtek-Wei-Pan-Microelectronics-S9012 |
Download  | WPMtek-Wei-Pan-Microelectronics-S9012 |
S9012
TRANSISTOR(PNP)
SO
T
-23
FEATURES
z
Complementary to S9013
Excellent h
FE
linearity
1. BASE
z
2. EMITTER
3. COLLECTOR
MARKING: 2T1
MAXIMUM RATINGS (
T
A
=25
℃
unless otherwise noted)
Symbol
Parameter
Value
-40
Units
V
V
CBO
Collector-Base Voltage
V
CEO
V
EBO
I
C
-25
V
Collector-Emitter Voltage
Emitter-Base Voltage
-5
V
Collector Current -Continuous
Collector Power Dissipation
Junction
T
e
mperature
-500
300
mA
mW
℃
P
C
T
j
150
T
stg
Storage
T
e
mperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25
℃
unless otherwise specified)
Parameter
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
T
e
st conditions
I
C
= -100
μ
A, I
E
=0
I
C
= -1mA, I
B
=0
MIN
-40
-25
-5
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
I
E
=-100
μ
A, I
C
=0
V
CB
=-40
V
,
I
E
=0
-0.1
-0.1
400
-0.6
-1.2
μ
A
μ
A
Emitter cut-off current
I
EBO
V
EB
= -5
V
,
I
C
=0
DC current gain
h
FE
V
CE
=-1
V
,
I
C
= -50mA
I
C
=-500mA, I
B
= -50mA
I
C
=-500mA, I
B
= -50mA
120
150
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE
(sat)
BE
(sat)
V
V
V
V
CE
=-6
V
,
I
C
= -20mA
f=
30MHz
Transition frequency
f
T
MHz
pF
Collector output capacitance
C
ob
5
V
CB
=
-10
V
,
I
E
=0,f=
1
MHz
CLASSIFICATION OF h
FE
Rank
L
H
J
120-200
200-350
300-400
Range
– 1 –
