WPMtek-Wei-Pan-Microelectronics-S9015
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S9015
TRANSISTOR(PNP)
SOT-23
FEATURES
1. BASE
z
Complementary to S9014
2. EMITTER
3. COLLECTOR
MARKING: M6
MAXIMUM RATINGS (T
A
=25
℃
unless otherwise noted)
Symbol
V
CBO
Parameter
Value
-50
Units
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
CEO
V
EBO
I
C
-45
V
-5
V
Collector Current -Continuous
Collector Power Dissipation
Junction
T
e
mperature
-0.1
0.2
A
P
C
W
℃
℃
T
j
150
T
stg
Storage
T
e
mperature
-55-150
ELECTRICAL CHARACTERISTICS (Tamb=25
℃
unless otherwise specified)
Parameter
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
Test
conditions
MIN
-50
-45
-5
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
I
C
= -100
μ
A, I
E
=0
I
C
= -0.1mA, I
B
=0
I
E
=-100
μ
A, I
C
=0
V
V
V
CB
=-50
V
,
I
E
=0
-0.1
-0.1
1000
-0.3
-1
μ
A
μ
A
Emitter cut-off current
I
EBO
V
EB
= -5
V
,
I
C
=0
DC current gain
h
FE
V
CE
=-5
V
,
I
C
= -1mA
I
C
=-100mA, I
B
= -10mA
I
C
=-100mA, I
B
=-10mA
200
150
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE
(sat)
V
BE
(sat)
V
V
V
CE
=-5
V
,
I
C
= -10mA
Transition frequency
f
T
MHz
f=
30MHz
CLASSIFICATION OF
h
FE
Rank
L
H
200-450
450-1000
Range
– 1 –
