WPMtek-Wei-Pan-Microelectronics-WTM20N65AF
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WTM20N65
A
F,WTM20N65
A
P,WTM20N65
A
Z,
WTM20N65
A
T,WTM20N65
A
MP,WTM20N65
A
GF
APPLICATIONS
FE
A
T
URES
⚫
Switch Mode Power Supply (SMPS)
⚫
Uninterruptible Power Supply (UPS)
⚫
Power Factor Correction (PFC)
⚫
BV
DSS
=650V, I
D
=20A
⚫
R
DS(on)
:0.17
Ω
(Max)@V
GS
=10V
⚫
Very low FOM R
DS(on)
×
Q
g
⚫
100% avalanche tested
⚫
RoHS compliant
D
S
S
Pin
1
:
G
G
Pin
2
:
D
river Source
TO-247
TO-263
TO-220
TO-220F
TO-262
DFN8x8
Device Marking and Package Information
Ordering code
WTM20N65AF
WTM20N65AP
WTM20N65AZ
WTM20N65AT
WTM20N65AMP
WTM20N65AGF
Package
TO-220F
TO-220
TO-262
TO-263
TO-247
DFN 8*8
Marking
20N65AF
XX
YYWW
20N65AP
XX
YYWW
20N65AZ
XX
YYWW
20N65AT
XX
YYWW
20N65AMP
XX
YYWW
20N65AGF
XX
YYWW
Absolute Maximum Ratings
T
C
= 25ºC, unless otherwise noted
Value
Unit
Parameter
Symbol
TO-220,TO-263,TO-262,TO-247,
DFN 8*8
TO-220F
Drain-Source Voltage (V
GS
= 0V)
Continuous Drain Current
Pulsed Drain Current (note1)
Gate-Source Voltage
V
DSS
I
D
650
20
V
A
A
V
I
DM
60
V
GSS
±
30
Single Pulse Avalanche Energy
(note2)
E
AS
480
mJ
AvalancheCurrent (note1)
I
AR
E
AR
3.5
0.7
A
mJ
V/ns
V/ns
W
Repetitive Avalanche Energy (note1)
MOSFET dv/dt ruggedness, V
DS
=0…400 V
Reverse diode dv/dt, V
DS
=0…400 V, I
SD
≤I
D
Power Dissipation (T
C
= 25ºC)
dv/dt
dv/dt
P
D
50
50
34
150
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55~+150
ºC
Thermal Resistance
Value
Parameter
Symbol
Unit
TO-220, TO-262, TO-263, TO-247,
DFN 8*8
TO-220F
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
R
thJC
R
thJA
4
0.83
62
K/W
80
– 1 –
WTM20N65
A
F,WTM20N65
A
P,WTM20N65
A
Z,
WTM20N65
A
T,WTM20N65
A
MP,WTM20N65
A
GF
Specifications
T
J
= 25ºC
, unless otherwise noted
Value
Typ.
Parameter
Symbol
Test Conditions
Unit
Min.
Max.
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0V, I
D
= 250µA
V
DS
= 650V, V
GS
= 0V, T
J
= 25ºC
V
DS
= 650V, V
GS
= 0V, T
J
= 150ºC
V
GS
=
±
30V
650
—
—
—
—
1
V
Zero Gate Voltage Drain Current
I
DSS
μA
—
—
100
±
100
3.5
0.17
—
Gate-Source Leakage
Gate-Source Threshold Voltage
Drain-Source On-Resistance
(Note3)
Gate Resistance
I
GSS
V
GS(th)
R
DS(on)
R
G
—
—
nA
V
V
DS
= V
GS
, I
D
= 0.25mA
V
GS
= 10V, I
D
= 10A
2.5
—
—
0.14
8
Ω
f = 1.0MHz, open drain
—
Ω
Dynamic
Input Capacitance
C
iss
C
oss
C
rss
Q
g
—
—
—
—
—
—
—
—
—
—
1724
72
—
—
—
—
—
—
—
—
—
—
V
GS
= 0V,
V
DS
= 100V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
pF
nC
6
38.5
8
V
DD
= 400V, I
D
= 20A,
V
GS
= 10V
Gate-Source Charge
Gate-Drain Charge
Q
gs
Q
gd
t
d(on)
t
r
15
Turn-on Delay Time
Turn-on Rise Time
25
59
V
DD
= 400
V
,
I
D
= 20A,
V
GS
= 10
V
,
R
G
= 25
Ω
ns
Turn-off Delay Time
Turn-off Fall Time
t
d(off)
t
f
121
44
Drain-Source Body Diode Characteristics
Continuous Body Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
I
S
I
SM
V
SD
t
rr
—
—
—
—
—
—
—
—
20
60
1.2
—
T
C
= 25ºC
A
T
J
= 25ºC, I
SD
= 20A, V
GS
= 0V
0.9
453
5.1
22
V
ns
μC
A
Reverse Recovery Time
V
R
= 400V, I
F
= 20A,
di
F
/dt =
100A/
μs
Reverse Recovery Charge
Q
rr
I
rrm
—
Peak Reverse Recovery Current
—
Notes
1. Repetitive
Rating: Pulse width limited by maximum junction temperature
2. I
AS
= 3.5A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25
°
C
3. Pulse
Test: Pulse width
≤ 300μs, Duty Cycle ≤
1%
– 2 –
WTM20N65
A
F,WTM20N65
A
P,WTM20N65
A
Z,
WTM20N65
A
T,WTM20N65
A
MP,WTM20N65
A
GF
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 1. Output Characteristics
20V
10V
8V
Figure 2. Transfer Characteristics
V
DS
= 20V
T
J
= 25ºC
7V
6V
5.5V
5v
T
J
= 150ºC
V
DS
, Drain-to-Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
Figure 3. On-Resistance vs. Drain Current
Figure 4. Capacitance
10
5
10
4
V
GS
= 10V
T
J
= 25ºC
C
iss
C
oss
C
rss
10
3
10
2
10
1
10
0
V
GS
= 0
f = 1MHz
I
D
, Drain Current (A)
V
DS
, Drain-to-Source Voltage (V)
Figure 6. Body Diode Forward Voltage
10
2
10
1
T
J
= 125ºC
T
J
= 25ºC
10
0
10
-1
, Source-to-Drain Voltage (V)
V
SD
– 3 –
WTM20N65
A
F,WTM20N65
A
P,WTM20N65
A
Z,
WTM20N65
A
T,WTM20N65
A
MP,WTM20N65
A
GF
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 7. On-Resistance vs.
Junction Temperature
Figure 8. Threshold Voltage vs.
Junction Temperature
I
D
= 250µA
V
GS
= 10V
I
D
= 10A
T
J
, Junction Temperature (
º
C)
T
J
, Junction Temperature (
º
C)
Figure 9. Transient Thermal Impedance
Figure 10. Transient Thermal Impedance
TO-220F
10
1
TO-220/TO-263/TO-262/TO-247/DFN 8*8
10
0
10
0
10
-1
10
-2
D = 0.5
D = 0.2
D = 0.1
D = 0.5
D = 0.2
D = 0.1
10
-1
D = 0.05
D = 0.02
D = 0.01
Single Pulse
D = 0.05
D = 0.02
D = 0.01
Single Pulse
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
T
p
, Pulse Width (s)
T
p
, Pulse Width (s)
– 4 –
WTM20N65
A
F,WTM20N65
A
P,WTM20N65
A
Z,
WTM20N65
A
T,WTM20N65
A
MP,WTM20N65
A
GF
Figure A
：
Gate Charge Test Circuit and Waveform
Figure B
：
Resistive Switching Test Circuit and Waveform
Figure C
：
Unclamped Inductive Switching Test Circuit and Waveform
– 5 –
