WPMtek-Wei-Pan-Microelectronics-WTM2301
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WTM2301
P-Channel Enhancement Mode Power MOSFET
Description
■
The WTM2301 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
battery protection or in other switching application.
Features
■
V
DS
= -20V, l
D
= -3A
R
DS(ON)
< 85mΩ @ V
GS
=-4.5V
R
DS(ON)
< 78mΩ @ V
GS
=-10V
High power and current handing capability
Lead free product is acquired
Surface mount package
SOT-23 Top View
■
■
■
Application
■
■
■
Battery protection.
Load switch
Power management
Schematic Diagram
Package and order information
Device
Device Marking
A1SHB
Device Package
Reel Size
Tape width
Quantity
WTM2301
SOT-23
Ø180mm
8 mm
3000 pcs
Absolute Maximum Ratings
(TA=25
℃
, RH=45%-75%, unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain-Source Voltage
Gate-Source Voltage
V
DS
V
GS
-20
V
V
±12
I
D
A
A
-3
Drain Current-Continuous
Drain Current-Pulsed
(Note 1)
Maximum Power Dissipation
I
DM
-10
1
P
D
W
Operating Junction and Storage Temperature Range
T
J
& T
STG
−55 to +150
°C
Thermal Characteristic
Parameter
Symbol
Value
Unit
Thermal Resistance and Junction-to-Ambient
(Note 2)
R
θJA
125
℃
/W
V1.0
_Aug,2018
– 1 –
WTM2301
P-Channel Enhancement Mode Power MOSFET
Electrical Characteristics
（
TA = 25°C unless otherwise noted
）
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
B
VDSS
I
DSS
V
GS
=0V I
D
=-250μA
V
DS
=-20V,V
GS
=0V
V
GS
=±12V,V
DS
=0V
-20
-22
–
V
–
–
–
–
-1
μA
nA
I
GSS
±100
On Characteristics
(Note 3)
Gate Threshold Voltage
V
GS(th)
R
DS(ON)
g
FS
V
DS
=V
GS
,I
D
=-250μA
V
GS
=-4.5V, I
D
=-3A
V
GS
=-10V,I
D
=-2A
V
DS
=-5V,I
D
=-2A
-0.4 -0.7
-1
85
78
–
V
–
–
71
60
–
mΩ
mΩ
S
Drain-Source On-State Resistance
Forward Transconductance
5
Dynamic Characteristics
(Note4)
Input Capacitance
C
lss
C
oss
C
rss
–
–
–
395
72
–
–
–
PF
PF
PF
Output Capacitance
V
DS
=-10V,V
GS
=0V,F=1.0MHz
Reverse Transfer Capacitance
53
Switching Characteristics
(Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
t
d(on)
t
r
–
–
–
–
–
–
–
11
35
–
–
nS
nS
nS
nS
nC
nC
nC
V
DD
=-10V,I
D
=-1A
V
GS
=-4.5V,R
GEN
=10Ω
td
(off)
t
f
30
–
10
–
Q
g
3.3
0.7
1.3
12
–
Q
gs
Q
gd
V
DS
=-10V,I
D
=-3A,V
GS
=-2.5V
–
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
Diode Forward Current
(Note 2)
V
SD
I
S
V
GS
=0V,I
S
=1.3A
–
–
–
–
-1.2
-3
V
A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
V1.0
_Aug,2018
–
2
–
WTM2301
P-Channel Enhancement Mode Power MOSFET
Typical Electrical and Thermal Characteristics
Figure 1 – Switching Test Circuit
Figure 2 – Switching Waveforms
T
J
-Junction Temperature (
°C)
T
J
-Junction Temperature
(
°C)
Figure 3 – Power Dissipation
I
D
-Drain Current(A)
Vds Drain-Source Voltage (V)
Figure 6 -Drain-Source On-Resistance
Figure 5 – Output Characteristics
V1.0
_Aug,2018
–
3
–
WTM2301
P-Channel Enhancement Mode Power MOSFET
Vgs Gate-source Voltage(V)
T
J
-Junction Temperature (
°C)
Figure 7 – Transfer Characteristics
Figure 8 – Drain-Source On-Resistance
Vgs Drain-source Voltage(V)
Vgs Gate-source Voltage(V)
Figure 10 – Capacitance vs Vds
Figure 9 – Rdson vs Vgs
Qg Gate Charge (nC)
Vsd Source-Drain Voltage(V)
Figure 11 –Gate Charge
Figure 12 –Source-Drain Diode Forward
V1.0
_Aug,2018
–
4
–
WTM2301
P-Channel Enhancement Mode Power MOSFET
Vds Drain-Source Voltage(V)
Figure 13 – Safe Operation Area
Square Wave Pulse Duration(sec)
Figure 14 – Normalized Maximum Transient Thermal Impedance
V1.0
_Aug,2018
–
5
–
WTM2301
P-Channel Enhancement Mode Power MOSFET
Soldering parameters
Reflow Condition
Pb-Free assembly
-Temperature Min (T
s(min)
-Temperature Max(T
s(max)
-Time (Min to Max) (ts)
)
+150
℃
+200
℃
Pre Heat
)
60-180 secs.
3
℃
/sec. Max
3
℃
/sec. Max
+217
℃
Average ramp up rate (Liquid us Temp (T
L
) to peak)
T
s(max)
to T
L
– Ramp-up Rate
-Temperature(T
L
) (Liquid us)
Reflow
-Temperature(t
L
)
60-150 secs.
+260(+0/-5)
℃
30 secs. Max
6
℃
/sec. Max
8 min. Max
+260
℃
Peak Temp (T
p
)
Time within 5
℃
of actual Peak Temp (t
p
)
Ramp-down Rate
Time 25
℃
to Peak Temp (T
P
)
Do not exceed
V1.0
_Aug,2018
–
6
–
WTM2301
P-Channel Enhancement Mode Power MOSFET
Package Outline Dimensions (SOT-23)
Dimensions in Millimeters
Symbol
Min
Max
1.150
0.100
1.050
A
0.900
0.000
0.900
A1
A2
b
c
0.300
0.080
2.800
0.500
0.150
3.000
D
E
1.200
2.250
1.400
2.550
E1
e
0.950 TYP
0.55 REF
e1
L
1.800
2.000
L1
θ
0.300
0°
0.500
8°
Recommend PAD Layout
Notes:
1. All
dimensions are in millimeters.
2. Tolerance
±0.10mm (4 mil) unless otherwise specified
3. Package
body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.
4. Dimension
L is measured in gauge plane.
5. Controlling
dimension is millimeter, converted inch dimensions are not necessarily exact.
V1.0
_Aug,2018
–
7
–
