WPMtek-Wei-Pan-Microelectronics-WTM2305
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WTM2305
P-Channel Enhancement Mode Power MOSFET
Description
■ The
WTM2305 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
battery protection or in other switching application.
Features
■ V
DS
= -20V, l
D
= -4.1A
R
DS(ON)
< 75mΩ @ V
GS
=-2.5V
R
DS(ON)
< 52mΩ @ V
GS
=-4.5V
■ High
power and current handing capability
■ Lead
free product is acquired
■ Surface
mount package
Application
■ PWM
applications
■ Load
switch
■ Power
management
Schematic Diagram
Package and order information
Device
Device Marking
Device Package
Reel Size
Tape width
Quantity
WTM2305
A5SHB
SOT-23
Ø180mm
8 mm
3000 pcs
Absolute Maximum Ratings
(TA=25
℃
, RH=45%-75%, unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain-Source Voltage
Gate-Source Voltage
V
DS
V
GS
-20
±12
-4.1
-3.2
-3
V
V
T
C
=25°C
T
C
=70°C
T
A
=25°C
T
A
=70°C
Continuous Drain Current
I
D
A
-2.3
-15
1.7
Drain Current-Pulsed
(Note 1)
Maximum Power Dissipation
I
DM
P
D
A
W
Operating Junction and Storage Temperature Range
T
J
& T
STG
−55 to +150
°C
V1.0
_Aug,2018
– 1 –
WTM2305
P-Channel Enhancement Mode Power MOSFET
Thermal Characteristic
Parameter
Thermal Resistance and Junction-to-Ambient
(Note 2)
Symbol
Value
Unit
R
θJA
74
℃
/W
Electrical Characteristics
（
TA = 25°C unless otherwise noted
）
Parameter
Off Characteristics
Symbol
Condition
Min
Typ
Max Unit
V
GS
=0V I
D
=-250μA
V
DS
=20V,V
GS
=0V
V
GS
=±12V,V
DS
=0V
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
B
VDSS
I
DSS
-20
–
–
–
–
V
–
–
-1
μA
I
GSS
±100 nA
On Characteristics
(Note 3)
V
DS
=V
GS
,I
D
=-250μA
V
GS
=-4.5V, I
D
=-4.1A
V
GS
=–2.5V,I
D
=-3A
V
DS
=-5V,I
D
=-2A
Gate Threshold Voltage
V
GS(th)
R
DS(ON)
g
FS
-0.45 -0.7
-1.0
V
mΩ
S
39
58
–
52
75
–
Drain-Source On-State Resistance
Forward Transconductance
–
6
Dynamic Characteristics
(Note4)
Input Capacitance
C
lss
C
oss
C
rss
–
–
–
740
290
190
–
–
–
PF
PF
PF
V
DS
=-4V,V
GS
=0V,F=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
(Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
t
d(on)
t
r
–
–
–
–
–
–
–
12
35
–
–
–
–
–
–
–
nS
nS
nS
nS
nC
nC
nC
V
DD
=-4V,I
D
=-3.3A, R
L
=1Ω
td
(off)
t
f
30
V
GS
=-4.5V,R
GEN
=1Ω
10
Q
g
7.8
1.2
1.6
V
DS
=-4V,I
D
=-4.1A,V
GS
=-4.5V
Q
gs
Q
gd
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
Diode Forward Current
(Note 2)
V
SD
I
S
–
–
–
–
-1.2
1.6
V
A
V
GS
=0V,I
S
=1.6A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
V1.0
_Aug,2018
–
2
–
WTM2305
P-Channel Enhancement Mode Power MOSFET
Typical Electrical and Thermal Characteristics
Figure 1 – Switching Test Circuit
Figure 2 – Switching Waveforms
T
J
-Junction Temperature (
°C)
T
J
-Junction Temperature (
°C)
Figure 4 – Drain Current
Figure 3 – Power Dissipation
I
D
-Drain Current(A)
Vds Drain-Source Voltage (V)
Figure 5 – Output
Figure 6 -Drain-Source
V1.0
_Aug,2018
–
3
–
WTM2305
P-Channel Enhancement Mode Power MOSFET
Vgs Gate-source Voltage(V)
T
J
-Junction Temperature (
°C)
Figure 7 – Transfer Characteristics
Figure 8 – Drain-Source On-Resistance
Vgs Gate-source Voltage(V)
Figure 9 – Rdson vs Vgs
Vgs Drain-source Voltage(V)
Figure 10 – Capacitance vs Vds
Qg Gate Charge (nC)
Vsd Source-Drain Voltage(V)
Figure 11 –Gate Charge
Figure 12 –Source-Drain Diode Forward
V1.0
_Aug,2018
–
4
–
WTM2305
P-Channel Enhancement Mode Power MOSFET
Vds Drain-Source Voltage(V)
Figure 13 – Safe Operation Area
Square Wave Pulse Duration(sec)
Figure 14 – Normalized Maximum Transient Thermal Impedance
V1.0
_Aug,2018
–
5
–
WTM2305
P-Channel Enhancement Mode Power MOSFET
Soldering parameters
Reflow Condition
Pb-Free assembly
-Temperature Min (T
s(min)
)
+150
℃
+200
℃
Pre Heat
-Temperature Max(T
s(max)
-Time (Min to Max) (ts)
)
60-180 secs.
3
℃
/sec. Max
3
℃
/sec. Max
+217
℃
Average ramp up rate (Liquid us Temp (T
L
) to peak)
T
s(max)
to T
L
– Ramp-up Rate
-Temperature (T
L
) (Liquid us)
Reflow
-Temperature(t
L
)
60-150 secs.
+260(+0/-5)
℃
30 secs. Max
6
℃
/sec. Max
8 min. Max
+260
℃
Peak Temp (T
p
)
Time within 5
℃
of actual Peak Temp (t
p
)
Ramp-down Rate
Time 25
℃
to Peak Temp (T
P
)
Do not exceed
V1.0
_Aug,2018
–
6
–
WTM2305
P-Channel Enhancement Mode Power MOSFET
Package Outline Dimensions (SOT-23)
Dimensions in Millimeters
Symbol
Min
Max
1.150
0.100
1.050
0.900
0.000
0.900
A
A1
A2
0.300
0.080
2.800
0.500
0.150
3.000
b
c
D
1.200
2.250
1.400
2.550
E
E1
0.950 TYP
0.55 REF
e
1.800
2.000
e1
L
0.300
0°
0.500
8°
L1
θ
Recommend PAD Layout
Notes:
1. All
dimensions are in millimeters.
2. Tolerance
±0.10mm (4 mil) unless otherwise specified
3. Package
body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.
4. Dimension
L is measured in gauge plane.
5. Controlling
dimension is millimeter, converted inch dimensions are not necessarily exact.
V1.0
_Aug,2018
–
7
–
