WPMtek-Wei-Pan-Microelectronics-WTM30N65AMP
| Part # | WPMtek-Wei-Pan-Microelectronics-WTM30N65AMP |
Download  | WPMtek-Wei-Pan-Microelectronics-WTM30N65AMP |
WTM30N65AMP
650V N-Channel Super Junction MOSFET
Features
BV
DS
S
=650V,
I
D
=30A
•
•
•
•
•
R
DS(on)
@
: 0.13
0
Ω
(Max)
V
GS
=10V
Very Low FOM (R
DS(on)
X Q
g
)
Extremely low switching loss
Excellent stability and uniformity
100% Avalanche Tested
Built-in ESD Diode
G
D
S
TO-247
Application
•
•
•
•
•
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply (UPS)
Power Factor Correction (PFC)
AC to DC Converters
Telecom, Solar
Device Marking and Package Information
Ordering code
Package
Marking
30N65AMP
XX YY
WW
WTM30N65AMP
TO-247
Absolute Maximum Ratings
T
C
=25
℃
unless otherwise specified
Symbol
V
DSS
V
GS
Parameter
Value
Unit
V
Drain-Source Voltage
Gate-Source Voltage
Drain Current
650
±
20
30.0
15.8
80
V
– Continuous (T
C
= 25
℃
)
A
I
D
Drain Current
– Continuous (T
C
= 100
℃
)
A
1)
I
DM
E
AS
I
AR
Drain Current
– Pulsed
A
2)
Single Pulsed Avalanche Energy
454
mJ
A
Avalanche Current
3.1
dv/dt
MOSFET dv/dt ruggedness, VDS=0…400V
Reverse diode dv/dt, V
DS
=0…400V, I
DS
≤I
D
Power Dissipation (T
C
= 25
℃
)
50
V/ns
V/ns
W
dv/dt
15
P
D
179
V
ESD(G-S)
T
J,
T
STG
Gate source ESD(HBM-C=100pF, R=1.5K
Ω)
Operating and Storage Temperature Range
2000
-55 to +150
V
℃
Thermal Resistance
Characteristics
Symbol
R
θ
JC
R
θ
JA
Parameter
Value
0.7
Unit
℃
/W
℃
/W
Thermal Resistance,
Junction-to-Case, Max.
Thermal Resistance,
Junction-to-Ambient , Max.
62.5
– 1 –
WTM30N65AMP
650V N-Channel Super Junction MOSFET
Electrical Characteristics
T
J
=25
°
C unless otherwise specified
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
On Characteristics
V
GS
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 1.1 mA
V
GS
= 10 V, I
D
= 10.2 A
2.0
–
–
4.0
V
R
DS(ON)
115
130
m
Ω
Static Drain-Source On-Resistance
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 1mA
650
–
–
–
–
–
V
V
DS
= 650 V, V
GS
= 0
V
DS
= 650 V, T
C
= 150
℃
V
GS
=
±
20 V, V
DS
= 0 V
–
–
–
1
μA
μA
μA
I
DSS
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
100
±
1
I
GSS
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
–
–
–
2840
61
–
–
–
pF
pF
pF
V
DS
= 400 V, V
GS
= 0 V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
3.8
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Time
–
–
–
–
–
–
–
56
31
–
–
–
–
–
–
–
ns
ns
V
DS
= 325 V, I
D
= 14.3 A,
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
R
G
= 25
Ω
250
20
ns
(Note 3,4)
ns
Q
g
Q
gs
Q
gd
65
nC
nC
nC
V
DS
= 520 V,
I
D
= 14.3 A,
V
GS
= 10 V
12
(Note 3,4)
19
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
–
–
–
–
–
–
–
30
80
1.3
–
A
A
I
SM
V
SD
trr
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
V
GS
= 0 V, I
S
= 14.3 A
–
V
450
7.8
ns
μC
V
R
= 400 V, I
F
= 14.3 A
di
F
/dt = 100 A/
μs
Qrr
Reverse Recovery Charge
–
Notes :
1. Repetitive
Rating : Pulse width limited by maximum junction temperature
2. I
AS
=3.1A V
DD
=100V, R
G
=25
Ω
, Starting T
J
=25
°
C
3. Pulse
Test : Pulse Width
≤ 300μs, Duty Cycle ≤ 2%
4. Essentially
Independent of Operating Temperature
– 2 –
WTM30N65AMP
650V N-Channel Super Junction MOSFET
Typical Characteristics
90
90
80
70
60
50
40
30
20
10
0
20V
10V
8V
80
70
60
50
40
30
20
10
0
25
℃
7V
150
℃
6V
5.5V
5V
※
Notes
1. V
DS
= 20 V
2. 300us Pulse Test
4.5V
0
0
0
5
10
15
20
0
2
4
6
8
10
V
DS
, Drain-Source Voltage
[V]
V
GS
, Gate-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
0.3
0.2
0.1
0.0
1E+02
1E+01
1E+00
1E-01
1E-02
1E-03
1E-04
1E-05
V
GS
= 10V
150
℃
V
GS
= 20V
25
℃
※
Notes
1. V
GS
= 10 V
2. T
J
= 25
℃
※
Notes
1. V
GS
= 0 V
2. 300us Pulse Test
10
20
30
40
50
60
70
80
0
0.2
0.4
0.6
0.8
1
1.2
1.4
I
D
[A]
V
SD
[V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
100000
10000
1000
100
12
10
8
Ciss
130V
325V
520V
Coss
Crss
6
10
4
1
2
※
Notes
1. V
GS
= 0 V
2. f = 1 MHz
※
Notes
1. I
D
= 14.3 A
0.1
0
100
200
300
400
500
600
0
10
20
30
40
50
60
70
V
DS
Drain-Source Voltage [V]
Q
G
[nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
– 3 –
WTM30N65AMP
650V N-Channel Super Junction MOSFET
Typical Characteristics
2.5
2
1.2
1.1
1
1.5
1
0.9
0.8
0.5
※
Notes
1. V
GS
= 0 V
2. I
D
= 1 mA
※
Notes
1. V
GS
= 10 V
2. I
D
= 10.2 A
0
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
T
J
[
℃
]
T
J
[
℃
]
Figure 8. On-Resistance Variation
vs. Temperature
Figure 7. Breakdown Voltage Variation
vs. Temperature
28
24
20
16
12
8
1000
100
10
10us
100us
1ms
DC
1
0.1
※
Notes
0.01
0.001
1. T
C
= 25
℃
2. T
J(MAX)
= 150
℃
3. Single Pulse
4
0
25
50
75
100
125
150
0.1
1
10
100
1000
T
C
[
℃
]
V
DS
[V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
single pulse
0.01
1E-05
0.0001
0.001
0.01
0.1
t
P
[S]
Figure 11. Transient Thermal Response Curve
– 4 –
WTM30N65AMP
650V N-Channel Super Junction MOSFET
Fig 12.
Gate Charge Test Circuit
& Waveform
V
GS
Same Type
as DUT
50KΩ
Q
g
12V
200nF
10V
300nF
V
DS
V
GS
Q
gs
Q
gd
DUT
3mA
Charge
Fig 13.
Resistive Switching Test Circuit
& Waveforms
R
L
V
DS
90%
V
DS
V
DD
( 0.5 rated V
DS
)
R
G
10%
V
in
DUT
10V
t
d(on)
t
r
t
d(off)
t
f
t
on
t
off
Fig 14.
Unclamped Inductive Switching Test Circuit
& Waveforms
BV
DSS
——————–
BV
DSS
— V
DD
L
1
2
2
—-
E
AS
=
L
L
I
AS
V
DS
V
DD
BV
DSS
I
AS
I
D
R
G
I
D
(t)
V
DD
V
DS
(t)
DUT
10V
t
p
Time
– 5 –
WTM30N65AMP
650V N-Channel Super Junction MOSFET
Fig 15.
Peak Diode Recovery dv/dt Test Circuit
& Waveforms
DUT
+
V
DS
_
R
1
I
S
L
Driver
R
2
Same Type
as DUT
V
DD
V
GS
• dv/dt controlled by
R
G
• I
S
controlled by pulse period
Gate Pulse Width
————————–
V
GS
D =
Gate Pulse Period
10V
( Driver )
I
FM
, Body Diode Forward Current
di
F
/dt
t
rr
I
S
t
F
t
S
( DUT )
10% I
RM
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
f
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
–
6
–
