WPMtek-Wei-Pan-Microelectronics-WTM3401

WTM3401  

-30V/-4.2A P Channel Advanced Power MOSFET  

Features  

V

(BR)DSS  

R

DS(ON)

Typ  

55m

Ω

@-10V  

65m

Ω

@ -4.5V  

I

D

Max  

-4.2A  

•

Low R

DS(on)

@V

GS

=-10V  

• -3.3V Logic Level Control  

• P Channel SOT23 Package  

• Pb

−

Free, RoHS Compliant  

-30V  

Applications  

• Load Switch  

•

Switching circuits  

•

High-speed line driver  

•

Power Management Functions  

Order Information  

SOT23-3  

Marking  

Product  

Package  

Packing  

3000PCS/Reel  

A19L

Y

 

WTM3401  

SOT23-3  

Absolute Maximum Ratings  

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above  

the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions  

may affect device reliability.  

Symbol  

Parameter  

Rating  

Unit  

Common Ratings (T

A

=25°C Unless Otherwise Noted)  

V

GS  

Gate-Source Voltage  

±12  

-30  

V

V

Drain-Source Breakdown Voltage  

Maximum Junction

T

e

mperature  

Storage

T

e

mperature Range  

V

(BR)DSS  

T

J  

150  

°C  

°C  

T

STG  

-50 to 150  

Mounted on Large Heat Sink  

I

DM  

=25°C  

=25°C  

=70°C  

=25°C  

=70°C  

T

A  

T

A  

T

A  

T

A  

T

A  

-16.8  

-4.2  

-3.2  

1.2  

A

A

Pulse Drain Current

T

e

sted

①

 

I

D  

Continuous Drain Current  

P

D  

Maximum Power Dissipation  

W

0.9  

R



JA  

Thermal Resistance Junction-Ambient  

100  

°C/W  

V1.0

_

May_

20

20  

–

1

–  

WTM3401  

-30V/-4.2A P Channel Advanced Power MOSFET  

Symbol  

Parameter  

Condition  

Min  

Typ  

Max Unit  

Static Electrical Characteristics @ T

J

= 25°C (unless otherwise stated)  

Drain-Source Breakdown Voltage  

V

GS

=0V I

D

=-250

μ

A  

-30  

—  

—  

—  

—  

V

V

(BR)DSS  

Zero Gate Voltage Drain Current(T

A

=25

℃

)  

V

DS

=-30

V

,

V

GS

=0V  

-1  

μ

A  

I

DSS  

Zero Gate Voltage Drain Current(T

A

=125

℃

) V

DS

=-24

V

,

V

GS

=0V  

—  

—  

—  

—  

-100  

±100  

-1.5  

70  

uA  

nA  

V

Gate-Body Leakage Current  

V

GS

=±12

V

,

V

DS

=0V  

V

DS

=V

GS

, I

D

=-250

μ

A  

V

GS

=-10

V

,

I

D

=-4.2A  

V

GS

=-4.5

V

,

I

D

=-4A  

I

GSS  

Gate Threshold Voltage  

-0.5  

—  

-0.7  

55  

65  

V

GS(TH)  

R

DS(ON)  

R

DS(ON)  

R

DS(ON)  

Drain-Source On-State Resistance

②  

Drain-Source On-State Resistance

②  

m

Ω  

—  

90  

Drain-Source On-State Resistance

②  

V

GS

=-3.3

V

,

I

D

=-2A  

—  

85  

120  

m

Ω  

Dynamic Electrical Characteristics @ T

J

= 25°C (unless otherwise stated)  

Input Capacitance  

—  

—  

—  

—  

—  

—  

710  

90  

40  

8.5  

1

—  

—  

—  

—  

—  

—  

pF  

pF  

pF  

nC  

nC  

nC  

C

iss  

V

DS

=-15

V

,

V

GS

=0

V

,  

Output Capacitance  

C

oss  

f=1MHz  

Reverse Transfer Capacitance  

C

rss  

T

o

tal Gate Charge  

Q

g  

V

DS

=-15V  

Gate Source Charge  

Gate Drain Charge  

I

D

=-4A,  

Q

gs  

Q

gd  

V

GS

=-4.5V  

1.7  

Switching Characteristics @ T

J

= 25°C (unless otherwise stated)  

8.5  

5.5  

26  

Turn on Delay Time  

—  

—  

–

—  

—  

—  

—  

ns  

ns  

ns  

ns  

t

d(on)  

V

DD

=-15

V

,  

Turn on Rise Time  

t

r  

I

D

=-4A,  

R

G

=3.3

Ω

,  

Turn Off Delay Time  

t

d(off)  

V

GS

=-4.5V  

12.5  

Turn Off Fall Time  

—  

t

f  

Source Drain Diode Characteristics  

Source drain current(Body Diode)  

T

A

=25

℃  

—  

—  

—  

-1.5  

-1.2  

A

V

I

SD  

T

j

=25

℃

, I

SD

=-4A,  

V

SD  

Forward on voltage

②

 

-0.85  

V

GS

=0V  

Notes:  

①

Pulse width limited by maximum allowable junction temperature  

②

Pulse test ; Pulse width



300



s, duty cycle



2%.  

V1.0

_

May_

20

20  

–

2

–  

WTM3401  

-30V/-4.2A P Channel Advanced Power MOSFET  

Packaging Information  

SOT23-3L  

V1.0

_

May_

20

20  

–

3

–