WPMtek-Wei-Pan-Microelectronics-WTM3415
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WTM
3415
Enhancement Mode Power MOSFET
P-Channel
Description
The
WTM
3415 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as1.8V. This device is suitable for use as a
load switch or in PWM applications .It is ESD protested.
General Features
●
V
DS
= -20
V
,
I
D
=-4A
Schematic diagram
R
DS(ON)
< 63m
Ω
@ V
GS
=-2.5V
R
DS(ON)
< 55m
Ω
@ V
GS
=-4.5V
ESD Rating: 2500V HBM
●
High Power and current handing capability
●
Lead free product is acquired
●
Surface mount package
Marking and pin Assignment
Application
●
PWM application
●
Load switch
SOT-23 top
view
Absolute Maximum Ratings (TA=25
℃
unless otherwise noted)
Parameter Symbol
Limit
Unit
V
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
-20
±8
V
DS
V
GS
I
D
V
-4
A
Drain Current-Pulsed (Note 1)
-30
A
I
DM
Maximum Power Dissipation
1.4
W
℃
P
D
Operating Junction and Storage Temperature Range
-55
T
o
1
50
T
J
,T
STG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
R
θ
JA
89.3
℃
/W
Electrical Characteristics (TA=25
℃
unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V I
D
=-250
μ
A
-20
–
V
Rev
A
_Aug,2018
– 1 –
WTM
3415
Enhancement Mode Power MOSFET
P-Channel
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
I
DSS
I
GSS
V
DS
=-20V,V
GS
=0V
V
GS
=±8V,V
DS
=0V
–
–
–
–
1
μ
A
μ
A
±10
V
GS(th)
R
DS(ON)
g
FS
V
DS
=V
GS
,I
D
=-250
μ
A
V
GS
=-4.5V, I
D
=-4A
V
GS
=-2.5V, I
D
=-4A
V
DS
=-5V,I
D
=-4A
-0.4 -0.65
-1.0
55
63
–
V
m
Ω
m
Ω
S
–
–
34.
44
–
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
8
C
lss
C
oss
C
rss
–
–
–
950
165
120
–
–
–
PF
PF
PF
V
DS
=-10V,V
GS
=0V,
Output Capacitance
F=1.0MHz
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
–
–
–
12
10
19
25
12
1.4
3.6
nS
nS
nS
nS
nC
nC
nC
Turn-on Rise Time
V
DD
=-10V,R
L
=2. 5
Ω
V
GS
=-4.5V,R
GEN
=3
Ω
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Q
g
V
DS
=-10V,I
D
=-4A,
Gate-Source Charge
Q
gs
Q
gd
–
–
V
GS
=-4.5V
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
V
SD
I
S
V
GS
=0V,I
S
=-1A
–
–
–
–
-1.2
-2.2
V
A
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t
≤
10 sec.
3.
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
4.
Guaranteed by design, not subject to production
Rev
A
_Aug,2018
–
2
–
WTM
3415
Enhancement Mode Power MOSFET
P-Channel
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Vdd
t
on
t
r
t
off
t
f
t
d(on)
t
d(off)
Rl
Vin
90%
90%
D
Vout
Vgs
V
OUT
INVERTED
Rgen
10%
90%
G
10%
50%
S
V
IN
50%
10%
PULSE WIDTH
Figure 1:Switching Test Circuit
Figure 2:Switching Waveforms
T
J
-Junction
T
e
mperature(
℃
)
Vds Drain-Source Voltage (V)
Figure 3 Power Dissipation
Figure 4
Safe Operation Area
Vds Drain-Source Voltage (V)
I
D
– Drain Current (A)
Figure 5 Output CHARACTERISTICS
Figure 6 Drain-Source On-Resistance
Rev
A
_Aug,2018
–
3
–
WTM
3415
Enhancement Mode Power MOSFET
P-Channel
Vgs Gate-Source Voltage (V)
T
J
-Junction
T
e
mperature(
℃
)
Figure 7 Transfer Characteristics
Figure 8 Drain-Source On-Resistance
Vgs Gate-Source Voltage (V)
Vds Drain-Source Voltage (V)
Figure 9 Rdson vs Vgs
Figure 10 Capacitance vs Vds
Qg Gate Charge (nC)
Vsd Source-Drain Voltage (V)
Figure 11 Gate Charge
Figure 12 Source- Drain Diode Forward
Rev
A
_Aug,2018
–
4
–
