WPMtek-Wei-Pan-Microelectronics-WTM47N65FMP
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WTM4
7
N65FMP
650
V
N-Channel Super Junction MOSFET
FE
A
T
URES
BV
DS
S
=650 V, I
D
=47A
R
DS(on)
@
:0.092
Ω
(Max)
V
GS
=10V
Very low FOM R
DS(on)
×
Q
g
100% avalanche tested
RoHS compliant
Ultra-fast body diode
Very high commutation ruggdness
APPLICATIONS
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply (UPS)
Power Factor Correction (PFC)
Device Marking and Package Information
Device
Package
Marking
WTM47N65FMP
TO-247
47N65FMP
XXX YY
WW
Absolute Maximum Ratings
T
C
= 25ºC, unless otherwise noted
Parameter
Symbol
V
DSS
I
D
Value
650
Unit
V
Drain-Source Voltage (V
GS
= 0V)
Continuous Drain Current
47
A
Pulsed Drain Current
(note1)
I
DM
141
A
Gate-Source Voltage
V
GSS
E
AS
±
30
1280
10.5
1.7
V
Single Pulse Avalanche Energy
Avalanche Current
(note2)
(note1)
(note1)
mJ
A
I
AR
Repetitive Avalanche Energy
MOSFET dv/dt ruggedness, V
DS
=0…400
V
Reverse diode dv/dt, V
DS
=0…400
V, I
SD
≤I
D
Power Dissipation (T
C
= 25ºC)
Operating Junction and Storage Temperature Range
E
AR
mJ
V/ns
V/ns
W
dv/dt
dv/dt
P
D
50
50
391
T
J
, T
stg
-55~+150
ºC
Thermal Resistance
Parameter
Symbol
R
thJC
Value
0.32
62
Unit
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
K/W
R
thJA
– 1 –
WTM4
7
N65FMP
650
V
N-Channel Super Junction MOSFET
Specifications
T
J
= 25ºC
, unless otherwise noted
Value
Parameter
Symbol
Test Conditions
Unit
Min.
Typ.
Max.
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0V, I
D
= 250µA
V
DS
= 650V, V
GS
= 0V, T
J
= 25ºC
V
DS
= 650V, V
GS
= 0V, T
J
= 150ºC
V
GS
=
±
30V
600
—
—
—
—
—
—
—
5
V
Zero Gate Voltage Drain Current
I
DSS
μA
—
1000
±
100
5.0
Gate-Source Leakage
Gate-Source Threshold Voltage
Drain-Source On-Resistance
(Note3)
Gate Resistance
I
GSS
V
GS(th)
R
DS(on)
R
G
—
nA
V
V
DS
= V
GS
, I
D
= 0.25mA
V
GS
= 10V, I
D
= 23.5A
3.0
—
0.080 0.092
Ω
f = 1.0MHz, open drain
—
1.95
—
Ω
Dynamic
Input Capacitance
C
iss
C
oss
C
rss
—
—
—
3680
390
15
—
—
—
V
GS
= 0V,
V
DS
= 50V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
pF
Effective output capacitance,
energy related
C
o(er)
V
GS
=0V, V
DS
=0…400V
—
—
131
675
—
—
Effective output capacitance,
time related
C
o(tr)
I
D
=constant, V
GS
=0V, V
DS
=0…400V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
—
—
—
—
—
—
—
72
14
24
15
12
80
6
—
—
—
—
—
—
—
V
DD
= 480V, I
D
= 47A,
V
GS
= 10V
nC
ns
V
DD
= 400
V
,
I
D
= 25.8A,
V
GS
= 10
V
,
R
G
= 1.9
Ω
t
d(off)
t
f
Drain-Source Body Diode Characteristics
Continuous Body Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
I
S
I
SM
V
SD
t
rr
—
—
—
—
—
—
—
—
47
141
1.2
—
T
C
= 25ºC
A
T
J
= 25ºC, I
SD
= 47A, V
GS
= 0V
0.9
140
0.7
11
V
ns
μC
A
Reverse Recovery Time
V
R
= 400V, I
F
= 47A ,
Reverse Recovery Charge
Q
rr
I
rrm
—
di
F
/dt =
100A/
μs
Peak Reverse Recovery Current
—
Notes
1. Repetitive
Rating: Pulse width limited by maximum junction temperature
2. I
AS
= 10.5A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25
°
C
3. Pulse
Test: Pulse width
≤ 300μs, Duty Cycle ≤
1%
– 2 –
WTM4
7
N65FMP
650
V
N-Channel Super Junction MOSFET
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
V
DS
= 10V
160
140
120
100
80
120
100
80
60
40
20
0
20V
10V
8V
7V
6V
T
J
= 25
º
C
5.5V
5V
60
T
J
= 150
º
C
40
20
0
0
2
4
6
8
10 12 14 16 18 20
0
2
4
6
8
10
V
DS
, Drain-to-Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
Figure 3. On-Resistance vs. Drain Current
160
140
120
100
80
V
GS
= 10V
T
J
= 25
º
C
60
40
0
20
40
60
80
100
120
I
D
, Drain Current (A)
Figure 5. Gate Charge
Figure 6. Body Diode Forward Voltage
10
3
10
T
J
= 150
º
C
T
J
= 25
º
C
10
2
8
6
4
2
0
V
DS
= 120V
10
1
10
0
V
DS
= 480V
10
-1
10
-2
10
-3
0
10
20
30
40
50
60
70
80
0.2
0.4
0.6
0.8
1
1.2
1.4
Q
g
, Total Gate Charge (nC)
V
SD
, Source-to-Drain Voltage (V)
– 3 –
WTM4
7
N65FMP
650
V
N-Channel Super Junction MOSFET
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 7. On-Resistance vs. Temperature
Figure 8. Threshold Voltage vs. Temperature
0.6
3
2.5
2
I
D
= 250µA
V
GS
= 10V
I
D
= 23.5A
0.4
0.2
0
-0.2
-0.4
-0.6
-0.8
-1
1.5
1
0.5
-1.2
0
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
T
J
, Junction Temperature (
º
C)
T
J
, Junction Temperature (
º
C)
Figure 9. Transient Thermal Impedance
10
0
10
-1
D = 0.5
D = 0.2
D = 0.1
10
-2
D = 0.05
D = 0.02
D = 0.01
Single Pulse
10
-3
10
-5
10
-4
10
-3
10
-2
10
-1
T
p
, Pulse Width (s)
– 4 –
WTM4
7
N65FMP
650
V
N-Channel Super Junction MOSFET
Figure A
：
Gate Charge Test Circuit and Waveform
Figure B
：
Resistive Switching Test Circuit and Waveform
Figure C
：
Unclamped Inductive Switching Test Circuit and Waveform
– 5 –
WTM4
7
N65FMP
650
V
N-Channel Super Junction MOSFET
TO-247
mm
SYMBOL
MIN
4.80
2.21
1.85
1.11
1.91
2.91
0.51
20.80
16.25
15.50
13.00
4.80
2.30
NOM
M
A
X
5.20
2.59
2.15
1.36
2.21
3.21
0.75
21.30
16.85
16.10
13.60
5.20
2.70
A
A1
A2
b
b2
b4
c
D
D1
E
5.00
2.41
2.00
1.21
2.01
3.01
0.61
21.00
16.55
15.80
13.30
5.00
E1
E2
E3
e
2.50
5.44BSC
19.92
–
3.60
–
L
19.82
20.22
4.30
3.80
7.30
L1
ΦP
ΦP1
S
–
3.40
–
6.15BSC
–
6
–
