Wuxi-China-Resources-Huajing-Microelectronics-CS10N70FA9D
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Silicon N-Channel Power MOSFET
R
○
CS10N70F A9D
V
DSS
700
10
V
A
General Description
：
I
D
CS10N70F A9D, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar
Technology which reduce the conduction loss, improve
switching performance and enhance the avalanche energy. The
transistor can be used in various power switching circuit for
system miniaturization and higher efficiency. The package form
is TO-220F, which accords with the RoHS standard.
Features
：
P
D
(T
C
=25
℃
)
R
DS(ON)Typ
50
W
Ω
0.78
l
Fast Switching
l
ESD Improved Capability
l
Low Gate Charge
(
T
y
pical Data:39nC)
l
Low Reverse transfer capacitances
(
T
y
pical:16pF)
l
100% Single Pulse avalanche energy
T
e
st
Applications
：
Power switch circuit of adaptor and charger.
Absolute
（
Tc= 25
℃
unless otherwise specified
）
：
Parameter
Symbol
V
DSS
Rating
Units
Drain-to-Source
V
o
ltage
700
V
A
Continuous Drain Current
10
I
D
Continuous Drain Current T
C
= 100
°
C
Pulsed Drain Current
8.2
A
a1
40
A
I
DM
Gate-to-Source
V
o
ltage
V
GS
±
30
V
a2
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
550
mJ
mJ
A
E
AS
a1
70
E
AR
a1
3.7
I
AR
a3
Peak Diode Recovery dv/dt
Power Dissipation
5.0
V/ns
W
dv/dt
50
P
D
Derating Factor above 25
°
C
Gate source ESD (HBM-C= 100pF, R=1.5k
Ω
)
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
0.4
4000
W/
℃
V
V
ESD(G-S)
T
J
，
T
stg
T
L
150
，
–
55 to 150
300
℃
℃
WUXI CHINA RESOURCES HUAJING MICROELEC
TRONICS CO.
,
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D.
Page 1 of 10
2015V01
CS10N70F A9D
R
○
Electrical Characteristics
（
Tc= 25
℃
unless otherwise specified
）
：
OFF Characteristics
Rating
Typ.
—
Symbol
Parameter
Test Conditions
Units
Min.
700
—
Max.
—
V
GS
=0
V
,
I
D
=250
µ
A
Drain to Source Breakdown
V
o
ltage
Bvdss Temperature Coefficient
V
V
DSS
ID=250uA,Reference25
℃
V/
℃
Δ
BV
DSS
/
Δ
T
J
0.74
—
—
V
DS
= 700
V
,
V
GS
= 0
V
,
T
a
= 25
℃
—
10
V
DS
=560
V
,
V
GS
= 0
V
,
Drain to Source Leakage Current
µ
A
I
DSS
—
—
100
T
a
= 125
℃
V
GS
=+20V
V
GS
=-20V
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
µ
A
µ
A
I
GSS(F)
I
GSS(R)
—
—
—
—
10
-10
ON Characteristics
Rating
Parameter
Test Conditions
Symbol
Units
Min.
—
Typ. Max.
0.78 0.9
4.0
V
GS
=10
V
,
I
D
=5A
Drain-to-Source On-Resistance
Gate Threshold
V
o
ltage
R
DS(ON)
V
GS(TH)
Ω
V
DS
= V
GS
, I
D
= 250
µ
A
2.0
V
Pulse width tp
≤
300
µ
s,
δ≤
2%
Dynamic Characteristics
Rating
Parameter
Test Conditions
Symbol
Units
S
Min.
—
Typ.
9
Max.
—
V
DS
=15
V
,
I
D
=5.0A
Forward Trans conductance
Input Capacitance
g
fs
C
iss
C
oss
C
rss
—
1553
155
16
—
V
GS
= 0V V
DS
= 25V
f = 1.0MHz
Output Capacitance
—
—
pF
Reverse Transfer Capacitance
—
—
Resistive Switching Characteristics
Rating
Typ.
15
Parameter
Test Conditions
Symbol
Units
ns
Min.
—
Max.
—
Turn-on Delay Time
Rise Time
t
d(ON)
tr
t
d(OFF)
t
f
—
25
—
I
D
=10.0A V
DD
= 350V
V
GS
= 10V
R
G
=9.1
Ω
Turn-Off Delay Time
Fall Time
—
51
—
—
31
—
Total Gate Charge
Gate to Source Charge
Gate to Drain (
“
Miller
”
)Charge
Q
g
—
39
I
D
=10.0A V
DD
=350V
V
GS
= 10V
Q
gs
Q
gd
—
7
—
—
nC
—
16
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Page 2 of 10
2015V01
CS10N70F A9D
R
○
Source-Drain Diode Characteristics
Rating
Typ.
—
Parameter
Test Conditions
Symbol
Units
Min.
—
Max.
10
Continuous Source Current (Body Diode)
Maximum Pulsed Current (Body Diode)
Diode Forward
V
o
ltage
I
S
A
A
I
SM
V
SD
trr
—
—
40
I
S
=10.0A,V
GS
=0V
—
—
1.5
—
V
Reverse Recovery Time
I
S
=10.0A,T
j
= 25
°
C
—
275
ns
nC
dI
F
/dt=100A/us,
V
GS
=0V
Reverse Recovery Charge
Qrr
—
1766 —
Pulse width tp
≤
300
µ
s,
δ≤
2%
Parameter
Typ.
Symbol
Units
Junction-to-Case
R
θ
JC
R
θ
JA
2.5
℃
/W
℃
/W
Junction-to-Ambient
100
Gate-source Zener diode
Rating
Parameter
Test Conditions
Symbol
Units
V
Min.
Typ.
Max.
I
GS
=
±
1mA(Open Drain)
V
GSO
Gate-source breakdown voltage
30
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device
’
s
ESD capabilit
y
,
b
ut also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device
’
s integrity. These integrated Zener diodes thus avoid the
usage of external components.
a1
：
Repetitive rating; pulse width limited by maximum junction temperature
a2
：
L=10.0mH, I
D
=10.5A, Start T
J
=25
℃
a3
：
I
SD
=10A,di/dt
≤
100A/us,V
DD
≤
BV
DS,
Start T
J
=25
℃
WUXI CHINA RESOURCES HUAJING MICROELEC
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Page 3 of 10
2015V01
CS10N70F A9D
R
○
Characteristics Curve
：
100
10
10
μ
s
50
100
μ
s
37.5
25
1ms
1
10
m
s
OPER
A
T
ION IN THIS AREA
MAY BE LIMITED BY R
DS(ON)
T
J
=MAX R
A
TED
0.1
0.01
12.5
T
C
=25
℃
Single Pulse
DC
1
10
100
1000
10000
0
0
Vds , Drain-to-Source Voltage , Volts
25
50
Tc , Case Tem
perature , C
75
100
125
150
Figure
1 Maximum
Forward Bias Safe Operating Area
Figure
21
2
Maximum Power Dissipation vs Case Temperature
12
V
GS
=9V
18
15
12
9
10
V
GS
=8V
8
6
4
2
0
V
GS
=6V
V
GS
=7V
6
V
GS
=5V
3
0
0
0
5
10
15
20
25
30
35
25
50
75
100
Tc , Case Temperature ,C
125
150
Vds , Drain-to-Source Voltage , Volts
Figure
1
3
Maximum Continuous Drain Current vs Case Temperature
Figure
4
Typical Output Characteristics
50%
20%
10%
P
DM
t1
0.1
5%
t2
2%
NOTES
：
DUTY
F
A
CTOR
：
D=t1/ t2
PEAK Tj=P
DM
*Z
thJC
*R
thJC
+T
C
1%
Single pulse
0.01
0.00001
0.0001
Figure
0.001
Rectangular Pulse Duration,Seconds
Maximum Effective Thermal Impendance , Junction to Case
0.01
0.1
1
5
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Page 4 of 10
2015V01
CS10N70F A9D
R
○
100
10
TRANSCONDUC
T
A
NCE M
A
Y
L
IMIT
CURRENT IN THIS REGION
FOR TEMPERATURES
ABOVE 25
℃
DER
A
T
E PEAK
CURRENT AS FOLLOWS:
é
25
ê
ë
ù
ú
û
150
–
T
C
I
=
I
125
V
GS
=10V
1
1.00E-04
1.00E-03
Figure
1.00E-02
Pulse Width , Seconds
Maximum Peak Current Capability
3
1.00E-01
1.00E+00
1.00E+01
1.00E-05
t
6
14
PULSE DUR
A
T
ION
= 10
μ
s
DUTY
F
A
CTOR
= 0.5%MAX
Tc =25
℃
PULSED TEST
V
DS
=30V
12
10
8
2.5
2
I
D
= 10A
I
D
= 5A
I
D
= 2.5A
1.5
1
6
4
0.5
0
2
0
4
6
8
10
12
，
V
olts
14
0
2
4
6
8
10
12
Vgs , Gate to Source Voltage
，
Volts
Vgs , Gate to Source Voltage
Figure
3
8
Typical Drain to Source ON Resistance vs Gate
V
o
ltage
and Drain Current
Figure
7
Typical Transfer Characteristics
1.1
1.0
0.9
0.8
0.7
0.6
PULSED TEST
Tc =25
℃
PULSED TEST
VGS=10V ID=5A
2.5
2
V
GS
=10V
1.5
1
0.5
0
0
2
4
6
8
10
12
-100
-50
0
50
100
150
200
Id , Drain Current , Amps
Tj, Junction temperature ,C
Figure 10 Typical
Drian to Source on Resistance
vs Junction Temperature
Figure
9
Typical Drain to Source ON Resistance
vs Drain Current
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Page 5 of 10
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CS10N70F A9D
R
○
1.15
1.2
1.1
1
1.1
1.05
1
0.9
0.8
0.7
0.95
0.9
VGS=0V
ID=250
μ
A
VGS=0V
ID=250
μ
A
-75 -50 -25
0
25 50 75
100 125 150 175
-100
-50
0
50
100
150
200
Tj, Junction temperature , C
Tj, Junction temperature , C
Figure 11 Typical
Theshold
V
o
ltage vs Junction Temperature
Figure 12 Typical
Breakdown
V
o
ltage vs Junction Temperature
2500
15
V
GS
=0V , f=1MHz
Ciss=Cgs+Cgd
Coss=Cds+Cgd
Crss=Cgd
2000
1500
1000
500
0
12
VDS=480V
I
D
=10A
9
Ciss
Coss
6
3
0
Crss
0
10
20
30
40
50
60
0
15
30
45
60
75
Vds , Drain – Source Voltage , Volts
Qg , Total Gate Charge , nC
Figure 13 Typical
Capacitance vs Drain to Source
V
o
ltage
Figure 14 Typical
Gate Charge vs Gate to Source
V
o
ltage
100
10
1
6
5
4
3
2
1
0
STARTING Tj = 25
℃
STARTING Tj = 150
℃
+150
℃
+25
℃
-55
℃
If R=0: t
A
V
=(L* I
AS
) / (1.38V
DSS
-V
DD
)
If R
≠
0: t
A
V
=(L/R) In[IAS*R/ (1.38V
DSS
-V
DD
)+1]
R equals total Series resistance of Drain circuit
V
GS
=0V
0.1
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.00E-06 1.00E-05
1.00E-04 1.00E-03 1.00E-02
1.00E-01
Vsd , Source – Drain Voltage , Volts
tav , Time in Avalanche , Seconds
Figure 15 Typical
Body Diode Transfer Characteristics
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Page 6 of 10
2015V01
CS10N70F A9D
R
○
T
e
st Circuit and Waveform
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Page 7 of 10
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CS10N70F A9D
R
○
WUXI CHINA RESOURCES HUAJING MICROELEC
TRONICS CO.
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D.
Page 8 of 10
2015V01
CS10N70F A9D
R
○
Package Information
Values(mm)
Items
MIN
9.60
15.40
8.90
4.30
2.10
2.40
MAX
10.40
16.20
9.50
A
B
B1
C
4.90
C1
D
E
3.00
3.00
0.60
0.30
1.12
3.40
2.00
12.00
6.30
2.34
3.15
3.00
1.00
0.60
1.42
3.80
2.40
14.00
7.70
2.74
3.55
3.30
F
G
H
L
N
Q
TO-220F
Package
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Page 9 of 10
2015V01
CS10N70F A9D
R
○
The name and content of poisonous and harmful material in products
Hazardous Substance
Part
’
s Name
Pb
Hg
Cd
Cr(VI)
PBB
PBDE
≤
0.1%
≤
0.1%
≤
0.01%
≤
0.1%
≤
0.1%
≤
0.1%
Limit
Lead Frame
Molding Compound
Chip
○
○
○
○
×
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
Wire Bonding
Solder
○
○
○
：
means the hazardous material is under the criterion of SJ/T11363-2006.
×
：
means the hazardous material exceeds the criterion of SJ/T11363-2006.
Note
The plumbum element of solder exist in products presently, but within the allowed
range of Eurogroup
’
s RoHS.
Warnings
1.
Exceeding the maximum ratings of the device in performance may cause damage to the device,
even the permanent failure, which may affect the dependability of the machine. It is suggested
to be used under 80 percent of the maximum ratings of the device.
2.
When installing the heatsink, please pay attention to the torsional moment and the smoothness
of the heatsink.
3.
VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect
the device from being damaged by the static electricity when using it.
4.
This publication is made by Huajing Microelectronics and subject to regular change without
notice.
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.
Add
：
No.14 Liangxi RD. Wuxi, Jiangsu, China
Mail:214061
H
T
U
UTH
Tel: +86 0510-85807228
Fax: +86- 0510-85800864
Marketing Part
：
Post
：
214061
Tel
：
+86 0510-81805277/81805336
Fax: +86
0510-85800360/85803016
Application and Service
：
Post
：
214061
T
el
/ Fax
：
+86- 0510-81805243/81805110
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO.
,
L
TD.
Page 10 of 10
2015V01
