Wuxi-China-Resources-Huajing-Microelectronics-CS2N65FA9

Silicon N-Channel Power MOSFET  

R

○

CS2N65F A9  

General Description

：

 

V

DSS  

650  

2.0  

27  

V

A

CS2N65F A9, the silicon N-channel Enhanced  

VDMOSFETs, is obtained by the self-aligned planar Technology  

which reduce the conduction loss, improve switching  

performance and enhance the avalanche energy. The transistor  

can be used in various power switching circuit for system  

miniaturization and higher efficiency. The package form is  

TO-220

F

, which accords with the RoHS standard.  

Features

：

 

I

D  

P

D

(T

C

=25

℃

)  

R

DS(ON)Typ  

W

Ω

3.9  

l

Fast Switching  

l

Low ON Resistance

(Rdso

n

≤

5.0

Ω

)  

l

Low Gate Charge

 

(

T

y

pical Data:9nC)  

l

Low Reverse transfer capacitances

(

T

y

pical:6pF)  

l

100% Single Pulse avalanche energy

T

e

st  

Applications

：  

Power switch circuit of adaptor and charger.  

Absolute

（

Tc= 25

℃

unless otherwise specified

）

：  

Parameter  

Symbol  

V

DSS  

Rating  

Units  

Drain-to-Source

V

o

ltage  

650  

V

A

Continuous Drain Current  

2.0  

I

D  

Continuous Drain Current T

C

= 100

°

C  

Pulsed Drain Current  

1.2  

A

a1  

8.0  

A

I

DM  

Gate-to-Source

V

o

ltage  

V

GS  

V

±

30  

a2  

Single Pulse Avalanche Energy  

Avalanche Energy ,Repetitive  

Avalanche Current  

68  

mJ  

mJ  

A

E

AS  

a1  

6.4  

E

AR  

a1  

1.1  

I

AR  

a3  

Peak Diode Recovery dv/dt  

Power Dissipation  

5.0  

V/ns  

W

dv/dt  

27  

0.22  

P

D  

Derating Factor above 25

°

C  

Operating Junction and Storage Temperature Range  

Maximum Temperature for Soldering  

W/

℃  

℃

T

J

，

T

stg  

150

，

–

55 to 150  

300  

T

L  

℃

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CS2N65F A9  

Electrical Characteristics

（

Tc= 25

℃

unless otherwise specified

）

：  

OFF Characteristics  

Rating  

Typ.  

—  

Symbol  

Parameter  

Test Conditions  

Units  

Min.  

650  

—  

Max.  

—  

V

GS

=0

V

,

I

D

=250

µ

A  

Drain to Source Breakdown

V

o

ltage  

Bvdss Temperature Coefficient  

V

V

DSS  

ID=250uA,Reference2

5

℃

 

0.60  

—  

V/

℃

 

Δ

BV

DSS

/

Δ

T

J  

V

DS

= 650

V

,

V

GS

= 0

V

,  

T

a

= 25

℃  

V

DS

=520

V

,

V

GS

= 0

V

,  

—  

—  

—  

1

Drain to Source Leakage Current  

µ

A  

I

DSS  

—  

100  

100  

T

a

= 125

℃  

V

GS

=+30V  

V

GS

=-30V  

Gate to Source Forward Leakage  

Gate to Source Reverse Leakage  

nA  

nA  

I

GSS(F)  

I

GSS(R)  

—  

—  

—  

—  

-100  

ON Characteristics  

Rating  

Parameter  

Test Conditions  

Symbol  

Units  

Min.  

—  

Typ. Max.  

V

GS

=10

V

,

I

D

=1.0A  

Drain-to-Source On-Resistance  

Gate Threshold

V

o

ltage  

R

DS(ON)  

V

GS(TH)  

3.9  

4.5  

4.0  

Ω

V

DS

= V

GS

, I

D

= 250

µ

A  

2.0  

V

Pulse width tp

≤

300

µ

s,

δ≤

2%  

Dynamic Characteristics  

Rating  

Typ.  

2.6  

Parameter  

Test Conditions  

Symbol  

Units  

S

Min.  

—  

Max.  

—  

V

DS

=15

V

,

I

D

=2A  

Forward Trans conductance  

Input Capacitance  

g

fs  

C

iss  

C

oss  

C

rss  

—  

290  

31  

—  

V

GS

= 0V V

DS

= 25V  

f = 1.0MHz  

Output Capacitance  

—  

—  

pF  

Reverse Transfer Capacitance  

—  

6

—  

Resistive Switching Characteristics  

Rating  

Parameter  

Test Conditions  

Symbol  

Units  

ns  

Min.  

—  

Typ.  

8

Max.  

—  

Turn-on Delay Time  

Rise Time  

t

d(ON)  

tr  

t

d(OFF)  

t

f  

—  

6

—  

I

D

=2A V

DD

= 325V  

V

GS

= 10V

 

R

G

=9.1

Ω  

Turn-Off Delay Time  

Fall Time  

—  

30  

11  

9

—  

—  

—  

Total Gate Charge  

Gate to Source Charge  

Gate to Drain (

“

Miller

”

)Charge  

Q

g  

—  

I

D

=2A V

DD

=325V  

V

GS

= 10V  

Q

gs  

Q

gd  

—  

1.5  

4

nC  

—  

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CS2N65F A9  

Source-Drain Diode Characteristics  

Rating  

Typ.  

—  

Parameter  

Test Conditions  

Symbol  

Units  

Min.  

—  

Max.  

2.0  

Continuous Source Current (Body Diode)  

Maximum Pulsed Current (Body Diode)  

Diode Forward

V

o

ltage  

I

S  

A

A

I

SM  

V

SD  

trr  

—  

—  

8.0  

I

S

=2.0A,V

GS

=0V  

—  

—  

1.5  

V

Reverse Recovery Time  

I

S

=2.0A,T

j

= 25

°

C  

—  

425  

1140  

ns  

nC  

dI

F

/dt=100A/us,  

V

GS

=0V  

Reverse Recovery Charge  

Qrr  

—  

Pulse width tp

≤

300

µ

s,

δ≤

2%  

Parameter  

Typ.  

4.63  

100  

Symbol  

Units  

Junction-to-Case  

R

θ  

℃

/W  

℃

/W  

JC  

Junction-to-Ambient  

R

θ  

JA  

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CS2N65F A9  

Characteristics Curve

：

 

27  

18  

9

0

25  

50  

Tc , Case Temperature , C  

0

75  

100  

125  

150  

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CS2N65F A9  

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CS2N65F A9  

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CS2N65F A9  

T

e

st Circuit and Waveform  

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CS2N65F A9  

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CS2N65F A9  

Package Information  

Values(mm)  

Items  

MIN  

9.60  

15.40  

8.90  

4.30  

2.10  

2.40  

MAX  

10.40  

16.20  

9.50  

A

B

B1  

C

4.90  

C1  

D

E

3.00  

3.00  

0.60  

0.30  

1.12  

3.40  

2.00  

12.00  

6.30  

2.34  

3.15  

3.00  

1.00  

0.60  

1.42  

3.80  

2.40  

14.00  

7.70  

2.74  

3.55  

3.30  

F

G

H

L

N

Q

TO-220F

Package  

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CS2N65F A9  

The name and content of poisonous and harmful material in products  

Hazardous Substance  

Part

’

s Name  

Pb  

Hg  

Cd  

Cr(VI)  

PBB  

PBDE  

≤

0.1%  

≤

0.1%  

≤

0.01%  

≤

0.1%  

≤

0.1%  

≤

0.1%  

Limit  

Lead Frame  

Molding Compound  

Chip  

○

○

○

○

×

○

○

○

○

○

○

○

○

○

○

○

○

○

○

○

○

○

○

○

○

○

○

○

Wire Bonding  

Solder  

○

○

○：

means the hazardous material is under the criterion of SJ/T11363-2006.  

×：

means the hazardous material exceeds the criterion of SJ/T11363-2006.  

The plumbum element of solder exist in products presently, but within the allowed  

range of Eurogroup

’

s RoHS.  

Note  

Warnings  

1.

Exceeding the maximum ratings of the device in performance may cause damage to the device,  

even the permanent failure, which may affect the dependability of the machine. It is suggested  

to be used under 80 percent of the maximum ratings of the device.  

2.

When installing the heatsink, please pay attention to the torsional moment and the smoothness  

of the heatsink.  

3.

VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect  

the device from being damaged by the static electricity when using it.  

4.

This publication is made by Huajing Microelectronics and subject to regular change without  

notice.  

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.  

Add

：

No.14 Liangxi RD. Wuxi, Jiangsu, China

 

Mail:214061  

H

T

U

UTH  

Tel: +86 0510-85807228

 

Fax: +86- 0510-85800864  

Marketing Part

：  

Post

：

214061  

Tel

：

+86 0510-81805277/81805336  

Fax: +86

 

0510-85800360/85803016  

E-mail

：

Application and Service

：

Post

：

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el

 

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