Wuxi-China-Resources-Huajing-Microelectronics-CS3N90A3H1-G

Silicon N-Channel Power MOSFET  

CS3N90 A3H1-G  

R

○

General Description

：

 

V

DSS  

900  

3

V

A

CS3N90 A3H1-

G

,

t

he silicon N-channel Enhanced  

VDMOSFETs, is obtained by the self-aligned planar Technology  

which reduce the conduction loss, improve switching  

performance and enhance the avalanche energy. The transistor  

can be used in various power switching circuit for system  

miniaturization and higher efficiency. The package form is  

TO-251, which accords with the RoHS standard.  

Features

：

 

I

D  

P

D

(T

C

=25

℃

)  

R

DS(ON)Typ  

75  

5

W

Ω



Fast Switching  



Low ON Resistance(

Rdson≤5.5Ω

)  



Low Gate Charge

 

(

T

ypical Data:16nC

)  



Low Reverse transfer capacitances

(Typical:6.5pF)  



100% Single Pulse avalanche energy Test  

Applications

：  

Automotive

、

DC Motor Control and Class D Amplifier.  

Absolute

（

Tc= 25

℃

unless otherwise specified

）

：  

Parameter  

Symbol  

V

DSS  

Rating  

Units  

Drain-to-Source

V

o

ltage  

900  

V

A

Continuous Drain Current  

3

I

D  

Continuous Drain Current T

C

= 100 °C  

Pulsed Drain Current  

1.9  

A

a1  

12  

A

I

DM  

Gate-to-Source

V

o

ltage  

V

GS  

±30  

V

a2  

Single Pulse Avalanche Energy  

Peak Diode Recovery dv/dt  

Power Dissipation  

125  

mJ  

V/ns  

W

E

AS  

a3  

5.0  

dv/dt  

75  

P

D  

Derating Factor above 25°C  

Operating Junction and Storage Temperature Range  

Maximum Temperature for Soldering  

0.6  

150

，

–

55 to 150  

300  

W/

℃  

℃

T

J

，

T

stg  

T

L  

℃

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Electrical Characteristics

（

Tc= 25

℃

unless otherwise specified

）

：  

OFF Characteristics  

Rating  

Typ.  

—  

Parameter  

Test Conditions  

Symbol  

Units  

Min.  

900  

—  

Max.  

—  

V

GS

=0

V

,

I

D

=250µA  

Drain to Source Breakdown

V

o

ltage  

Bvdss Temperature Coefficient  

V

V

DSS  

ID=250uA,Reference25

℃

 

V/

℃

 

ΔBV

DSS

/ΔT

J  

0.61  

—  

—  

V

DS

= 900

V

,

V

GS

= 0

V

,  

T

a

= 25

℃  

—  

25  

V

DS

=720

V

,

V

GS

= 0

V

,  

Drain to Source Leakage Current  

µA  

I

DSS  

—  

—  

250  

T

a

= 125

℃  

V

GS

=+30V  

V

GS

=-30V  

Gate to Source Forward Leakage  

Gate to Source Reverse Leakage  

nA  

nA  

I

GSS(F)  

I

GSS(R)  

—  

—  

—  

—  

100  

-100  

ON Characteristics  

Rating  

Parameter  

Test Conditions  

Symbol  

Units  

Min.  

—  

Typ. Max.  

V

GS

=10

V

,

I

D

=1.5A  

Drain-to-Source On-Resistance  

Gate Threshold

V

o

ltage  

R

DS(ON)  

V

GS(TH)  

5

5.5  

4.0  

Ω

V

DS

= V

GS

, I

D

= 250µA  

2.0  

V

Pulse width tp≤3

00µ

s,δ≤2%  

Dynamic Characteristics  

Rating  

Typ.  

5

Parameter  

Test Conditions  

Symbol  

Units  

Min.  

Max.  

V

DS

=15

V

,

I

D

=3A  

f = 1.0MHz  

Forward Trans conductance  

Gate resistance  

g

fs  

—  

—  

S

R

g  

3.1  

Ω

Input Capacitance  

C

iss  

C

oss  

C

rss  

—  

—  

—  

630  

44  

—  

—  

—  

V

GS

= 0V V

DS

= 25V  

f = 1.0MHz  

Output Capacitance  

pF  

Reverse Transfer Capacitance  

6.5  

Resistive Switching Characteristics  

Rating  

Typ.  

13  

Parameter  

Test Conditions  

Symbol  

Units  

ns  

Min.  

—  

Max.  

—  

Turn-on Delay Time  

Rise Time  

t

d(ON)  

tr  

t

d(OFF)  

t

f  

—  

32  

—  

I

D

=3A  

V

DD

= 450V  

V

GS

= 10V

 

R

G

=25Ω  

Turn-Off Delay Time  

Fall Time  

—  

25  

—  

—  

40  

—  

Total Gate Charge  

Gate to Source Charge  

Gate to Drain (“Miller”)Charge  

Q

g  

—  

16  

I

D

=3A V

DD

=450V  

V

GS

= 10V  

Q

gs  

Q

gd  

—  

4

—  

—  

nC  

—  

7

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Source-Drain Diode Characteristics  

Rating  

Typ.  

—  

Parameter  

Test Conditions  

Symbol  

Units  

Min.  

—  

Max.  

3

Continuous Source Current (Body Diode)  

Maximum Pulsed Current (Body Diode)  

Diode Forward

V

o

ltage  

I

S  

A

A

I

SM  

V

SD  

trr  

—  

—  

12  

I

S

=3A,V

GS

=0V  

—  

—  

1.5  

V

Reverse Recovery Time  

I

S

=3A,T

j

= 25°C  

—  

820  

2.7  

ns  

µ

C  

dI

F

/dt=100A/us,  

V

GS

=0V  

Reverse Recovery Charge  

Qrr  

—  

Pulse width tp≤3

00µ

s,δ≤2%  

Parameter  

Max.  

1.67  

62.5  

Symbol  

Units  

Junction-to-Case  

R

θJC  

R

θJA  

℃

/W  

℃

/W  

Junction-to-Ambient  

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Characteristics Curve

：

 

80  

70  

60  

50  

40  

30  

20  

10  

0

0

25  

50  

75  

100  

125  

150  

TC , Case Temperature , C  

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CS3N90 A3H1-G  

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T

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st Circuit and Waveform  

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Package Information  

V

a

lues(mm)  

Items  

MIN  

MAX  

A

6.30  

5.70  

0.70  

6.90  

2.10  

0.20  

0.30  

0.30  

0.50  

0.30  

0.70  

1.60  

0.25  

7.50  

5.10  

2.09  

6.90  

6.40  

1.30  

7.30  

2.50  

0.40  

0.50  

0.60  

0.70  

0.60  

1.00  

2.40  

0.45  

9.80  

5.50  

2.49  

B

B1  

B2  

C

C1  

C2  

D

E

F

G

H

H1  

L*  

M

N

*

：

adjustable  

TO-251 (251L-1)

Package  

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The name and content of poisonous and harmful material in products  

Hazardous Substance  

Part’s Name  

Pb  

≤

0.1%  

○

Hg  

≤

0.1%  

○

Cd  

≤

Cr(VI)  

PBB  

PBDE  

DIBP  

DEHP  

DBP  

BBP  

Limit  

≤

0.1%

≤

0.1%

≤

0.1%

≤

0.1%

≤

0.1%

≤

0.1%

≤

0.1%  

0.01%  

○

Lead Frame  

Molding  

Chip  

○

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○

○

○

○

Wire Bonding  

Solder  

○

○

○

×

○

○

○

：

Means the hazardous material is under the criterion of

2011/65/EU

.  

×

：

Means the hazardous material exceeds the criterion of

2011/65/EU

.  

Note  

The plumbum element of solder exist in products presently, but within the allowed range  

of Eurogroup’s RoHS.  

Warnings  

1.

Exceeding the maximum ratings of the device in performance may cause damage to the device,  

even the permanent failure, which may affect the dependability of the machine. It is suggested  

to be used under 80 percent of the maximum ratings of the device.  

2.

When installing the heatsink, please pay attention to the torsional moment and the smoothness  

of the heatsink.  

3.

VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect  

the device from being damaged by the static electricity when using it.  

4.

This publication is made by Huajing Microelectronics and subject to regular change without  

notice.  

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.  

Add

：

No.14 Liangxi RD. Wuxi, Jiangsu, China

 

Mail:214061  

Tel: +86 0510-85807228

 

Fax: +86- 0510-85800864  

Marketing Part

：  

Post

：

214061  

T

e

l

：

+86 0510-81805277/81805336  

Fax: +86

 

0510-85800360/85803016  

E-mail

：

Application and Service

：

Post

：

214061

T

e

l

 

/ Fax

：

+86- 0510-81805243/81805110  

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