Wuxi-China-Resources-Huajing-Microelectronics-CS55N06A4
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Silicon N-Channel Power Trench MOSFET
CS55N06 A4
R
○
General Description
：
V
DSS
60
55
10
V
A
CS55N06 A4, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the high density Trenchtechnology
which reduce the conduction loss, improve switching performance
and enhance the avalanche energy. The transistor can be used in
various power switching circuit for system miniaturization and higher
efficiency. The package form is TO-252, which accords with the
RoHS standard.
I
D
R
DS(ON)Typ
m
Ω
Features
：
l
Fast Switching
l
ESD Improved Capability
l
Low ON Resistance
l
Low Gate Charge
l
Low Reverse transfer capacitances
l
100% Single Pulse avalanche energy Test
Applications
：
Power switch circuit of adaptor and charger.
Absolute
Symbol
V
DSS
（
T
J
= 25
℃
unless otherwise specified
）
：
Parameter
Rating
Units
Drain-to-Source
V
o
ltage
60
55
V
A
Continuous Drain Current T
C
= 25
°
C
Continuous Drain Current T
C
= 100
°
C
Pulsed Drain Current T
C
= 25
°
C
Gate-to-Source
V
o
ltage
I
D
38
A
a1
220
A
I
DM
V
GS
V
±
20
a2
Single Pulse Avalanche Energy
Power Dissipation T
C
= 25
°
C
135
mJ
W
℃
E
AS
69.5
P
D
Operating Junction and Storage Temperature Range
T
J
，
T
stg
150
，
–
55 to 150
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Page 1 of 10
2019V01
CS55N06 A4
R
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Electrical Characteristics
（
T
J
= 25
℃
unless otherwise specified
）
：
OFF Characteristics
Rating
Typ.
—
Symbol
V
DSS
Parameter
Test Conditions
Units
Min.
60
Max.
—
V
GS
=0
V
,
I
D
=250
µ
A
Drain to Source Breakdown
V
o
ltage
V
V
DS
= 60
V
,
V
GS
= 0
V
,
T
J
= 25
℃
V
DS
=48
V
,
V
GS
= 0
V
,
—
—
—
1
Drain to Source Leakage Current
µ
A
I
DSS
—
100
T
J
= 125
℃
V
GS
=+20V
V
GS
=-20V
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
nA
nA
I
GSS(F)
I
GSS(R)
—
—
—
—
100
-100
ON Characteristics
Rating
Parameter
Test Conditions
Symbol
Units
Min.
—
Typ. Max.
V
GS
=10
V
,
I
D
=20A
10
13
13
16
m
Ω
m
Ω
V
Drain-to-Source On-Resistance
Gate Threshold
V
o
ltage
R
DS(ON)
V
GS(TH)
V
GS
=4.5
V
,
I
D
=20A
V
DS
= V
GS
, I
D
= 250
µ
A
—
0.9
1.4 1.9
Pulse width tp
≤
300
µ
s,
δ≤
2%
Dynamic Characteristics
Rating
Parameter
Test Conditions
Symbol
Units
Min.
—
Typ.
2.4
Max.
—
V
GS
=0
V
,
V
DS
=0
V
,
f
=1MHz
Gate resistance
R
g
Ω
Input Capacitance
C
iss
C
oss
C
rss
—
—
2370
164
123
V
DS
=30
V
,
V
GS
=0
V
,
f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
—
—
pF
—
—
Resistive Switching Characteristics
Rating
Typ.
Parameter
Test Conditions
Symbol
Units
ns
Min.
—
Max.
—
Turn-on Delay Time
Rise Time
t
d(ON)
tr
t
d(OFF)
t
f
13.1
25.1
60.8
9.0
—
—
V
DD
=30
V
,
I
D
=10A,
R
G
= 3
Ω
, V
GS
=10V
Turn-Off Delay Time
Fall Time
—
—
—
—
Total Gate Charge
Gate to Source Charge
Gate to Drain (
“
Miller
”
)Charge
Q
g
—
50.7
7.0
V
DS
=30
V
,
I
D
=20A,
V
GS
=10V
Q
gs
Q
gd
—
—
—
nC
—
12.3
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CS55N06 A4
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Source-Drain Diode Characteristics
Rating
Typ.
—
Parameter
Test Conditions
Symbol
Units
Min.
—
Max.
1.2
—
I
S
=20A,V
GS
=0V
V
GS
=0V,
Diode Forward
V
o
ltage
Reverse Recovery Time
V
SD
trr
V
—
22
ns
I
S
=20A,
Reverse Recovery Charge
Qrr
—
19.5
—
nC
di/dt=100A/us
Pulse width tp
≤
300
µ
s,
δ≤
2%
Parameter
Max.
Symbol
Units
Junction-to-Case
R
θ
1.8
℃
/W
℃
/W
JC
Junction-to-Ambient
100
R
θ
JA
Notes
：
a1
：
Repetitive rating; pulse width limited by maximum junction temperature
a2
：
Vdd=25V
，
L=1mH, I
D
=17A, Start T
J
=25
℃
a3
：
Recommend soldering temperature defined by IPC/JEDEC J-STD 020
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Page 3 of 10
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CS55N06 A4
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Characteristics Curve
：
100
80
V
GS
=4.5,5,6,10V
PULSED TEST
VDS = 20V
70
250
μ
s
PULSE
T
E
ST
60
V
GS
= 4.0V
10
1
50
40
150
℃
V
GS
= 3.5V
30
20
10
0
25
℃
V
GS
= 3V
0.1
0
1
2
3
4
5
1
2
3
4
5
V
DS
,Drain-to-Source Voltage,V
V
GS
,Gate-to-Source Voltage,V
Figure 1. Output Characteristics
Figure 2.Transfer Characteristics
14
13
12
11
10
9
PULSED TEST
V
GS
= 0V
10
1
V
GS
= 4.5V
150
℃
25
℃
V
GS
= 10V
PU
L
SED TEST
T = 25
℃
j
8
0.1
0
10
20
30
0.2
0.4
0.6
0.8
1
I
D
,Drain Current,A
V
SD
,Source-to-Drain Voltage,V
Figure 3. Drain-to-Source On Resistance vs Drain
Current
Figure 4.
Typical Body Diode Transfer Characteristics
12
10000
V
D
S
= 30V
I
D
= 20A
10
C
iss
8
6
4
2
0
1
0
00
C
oss
f = 1MHz
C
iss
= C
gs
+C
gd
C
oss
= C
ds
+C
gd
C
rss
1
0
0
0.1
1
10
100
0
10
20
30
40
50
60
Q
G
,Total Gate Charge,nC
V
DS
,Drain-to-Source Voltage,V
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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D.
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CS55N06 A4
R
○
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Page 5 of 10
2019V01
CS55N06 A4
R
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50
45
40
35
30
25
20
15
10
5
1.2
1.1
1
PULSED TEST
I
D
=20A
V
GS
= V
DS
150
℃
25
℃
0.9
0.8
0.7
0.6
0
2.00
4.00
6.00
8.00
10.00
–
7
5
–
2
5
25
75
125
175
V
GS
,Gate-to-Source Voltage,V
T
J
,Junction Temperature(
℃
)
Figure 12. Drain-to-Source On Resistance vs Gate
Voltage and Drain Current
Figure 13. Normalized Threshold Voltage vs Junction
Temperature
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2019V01
CS55N06 A4
R
○
T
e
st Circuit and Waveform
：
Figure 14. Gate Charge
T
e
st Circuit
Figure 15. Gate Charge Waveforms
Figure 16. Resistive Switching
T
e
st Circuit
Figure 17. Resistive Switching Waveforms
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Page 7 of 10
2019V01
CS55N06 A4
R
○
Figure 18. Diode Reverse Recovery
T
e
st Circuit
Figure 19. Diode Reverse Recovery Waveform
Figure20.Unclamped Inductive Switching
T
e
st Circuit
Figure21.Unclamped Inductive Switching Waveform
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Page 8 of 10
2019V01
CS55N06 A4
R
○
Package Information
：
V
a
lues(mm)
Items
MIN
6.30
0
MAX
6.90
0.16
6.30
2.50
0.70
0.90
1.00
0.60
1.20
10.50
3.10
1.00
5.50
2.49
A
A1
B
5.70
2.10
0.30
0.60
0.70
0.30
0.70
9.60
2.70
0.40
5.10
2.09
C
D
E1
E2
F
G
L1
L2
H
M
N
R
0.3
T
1.40
5.10
1.60
6.30
Y
TO-252
Package
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.
Page 9 of 10
2019V01
CS55N06 A4
R
○
The name and content of poisonous and harmful material in products
Hazardous Substance
Part
’
s Name
Pb
≤
Hg
≤
Cd
≤
Cr(VI)
PBB
PBDE
DIBP
DEHP
DBP
BBP
Limit
≤
0.1%
≤
0.1%
≤
0.1%
≤
0.1%
≤
0.1%
≤
0.1%
≤
0.1%
0.1%
○
○
○
○
×
0.1%
○
○
○
○
○
0.01%
○
Lead Frame
Molding
Chip
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
Wire Bonding
Solder
○
○
○
：
Means the hazardous material is under the criterion of
2011/65/EU
.
×
：
Means the hazardous material exceeds the criterion of
2011/65/EU
.
Note
The plumbum element of solder exist in products presently, but within the allowed range
of Eurogroup
’
s RoHS.
Warnings
1.
Exceeding the maximum ratings of the device in performance may cause damage to the device,
even the permanent failure, which may affect the dependability of the machine. It is suggested
to be used under 80 percent of the maximum ratings of the device.
2.
When installing the heatsink, please pay attention to the torsional moment and the smoothness
of the heatsink.
3.
VDMOSFETs is the device which is sensitive to the staticelectricity, it is necessary to protect
the device from being damaged by thestaticelectricity when using it.
4.
This publication is made by Huajing Microelectronics and subject to regularchange without
notice.
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO.,
L
T
D.
Add
：
No.14 Liangxi RD. Wuxi, Jiangsu, ChinaMail:214061
H
T
U
U
T
H
Tel: +86 0510-85807228
Fax: +86- 0510-85800864
Marketing Part
：
Post
：
214061
Tel
：
+86 0510-81805277/81805336
Fax: +86
0510-85800360/85803016
Application and Service
：
Post
：
214061
T
el
/ Fax
：
+86- 0510-81805243/81805110
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T
D.
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