Wuxi-China-Resources-Huajing-Microelectronics-CS630A4H

Silicon N-Channel Power MOSFET  

R

○

CS630 A4H  

General Description

：

 

V

DSS  

200  

V

A

CS630 A4H, the silicon N-channel Enhanced  

VDMOSFETs, is obtained by the self-aligned planar Technology  

which reduce the conduction loss, improve switching  

performance and enhance the avalanche energy. The transistor  

can be used in various power switching circuit for system  

miniaturization and higher efficiency. The package form is  

TO-252, which accords with the RoHS standard.  

Features

：

 

I

D  

9

P

D

(T

C

=25

℃

)  

R

DS(ON)Typ  

83  

W

Ω

0.23  

l

Fast Switching  

l

Low ON Resistance(

Rdson

≤

0.28

Ω

)  

l

Low Gate Charge

 

(

T

ypical Data:13nC

)  

l

Low Reverse transfer capacitances

(

T

y

pical:10pF)  

l

100% Single Pulse avalanche energy

T

e

st  

Applications

：  

Automotive

、

DC Motor Control and Class D Amplifier.  

Absolute

（

Tc= 25

℃

unless otherwise specified

）

：  

Parameter  

Symbol  

V

DSS  

Rating  

Units  

Drain-to-Source

V

o

ltage  

200  

V

A

Continuous Drain Current  

9

I

D  

Continuous Drain Current T

C

= 100

°

C  

Pulsed Drain Current  

5.5  

A

a1  

36  

A

I

DM  

Gate-to-Source

V

o

ltage  

V

GS  

±

30  

V

a2  

Single Pulse Avalanche Energy  

Avalanche Energy ,Repetitive  

Avalanche Current  

460  

mJ  

mJ  

A

E

AS  

a1  

50  

E

AR  

a1  

3.2  

I

AR  

a3  

Peak Diode Recovery dv/dt  

Power Dissipation  

5.0  

V/ns  

W

dv/dt  

83  

0.67  

P

D  

Derating Factor above 25

°

C  

Operating Junction and Storage Temperature Range  

Maximum Temperature for Soldering  

W/

℃  

℃

T

J

，

T

stg  

150

，

–

55 to 150  

300  

T

L  

℃

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.

 

P

age  

1

o

f 10  

2015V01  

CS630 A4H  

R

○

Electrical Characteristics

（

Tc= 25

℃

unless otherwise specified

）

：  

OFF Characteristics  

Rating  

Typ.  

—  

Parameter  

Test Conditions  

Symbol  

Units  

Min.  

200  

—  

Max.  

—  

V

GS

=0

V

,

I

D

=250

µ

A  

Drain to Source Breakdown

V

o

ltage  

Bvdss Temperature Coefficient  

V

V

DSS  

ID=250uA,Reference25

℃

 

V/

℃

 

Δ

BV

DSS

/

Δ

T

J  

0.21  

—  

—  

V

DS

= 200

V

,

V

GS

= 0

V

,  

T

a

= 25

℃

 

—  

1

V

DS

=160

V

,

V

GS

= 0

V

,  

Drain to Source Leakage Current  

µ

A  

I

DSS  

—  

—  

100  

T

a

= 125

℃  

V

GS

=+30V  

V

GS

=-30V  

Gate to Source Forward Leakage  

Gate to Source Reverse Leakage  

nA  

nA  

I

GSS(F)  

I

GSS(R)  

—  

—  

—  

—  

100  

-100  

ON Characteristics  

Rating  

Parameter  

Test Conditions  

Symbol  

Units  

Min.  

—  

Typ. Max.  

0.23 0.28  

4.0  

V

GS

=10

V

,

I

D

=5.4A  

Drain-to-Source On-Resistance  

Gate Threshold

V

o

ltage  

R

DS(ON)  

V

GS(TH)  

Ω

V

DS

= V

GS

, I

D

= 250

µ

A  

2.0  

V

Pulse width tp

≤

300

µ

s,

δ≤

2%  

Dynamic Characteristics  

Rating  

Parameter  

Test Conditions  

Symbol  

Units  

S

Min.  

—  

Typ.  

9.5  

600  

90  

Max.  

—  

V

DS

=25

V

,

I

D

=5.4A  

Forward Trans conductance  

Input Capacitance  

g

fs  

C

iss  

C

oss  

C

rss  

—  

—  

V

GS

= 0V V

DS

= 25V  

f = 1.0MHz  

Output Capacitance  

—  

—  

pF  

Reverse Transfer Capacitance  

—  

10  

—  

Resistive Switching Characteristics  

Rating  

Typ.  

10  

Parameter  

Test Conditions  

Symbol  

Units  

ns  

Min.  

—  

Max.  

—  

Turn-on Delay Time  

Rise Time  

t

d(ON)  

tr  

t

d(OFF)  

t

f  

—  

21  

—  

I

D

=9A  

V

DD

= 100V  

V

GS

= 10V

 

R

G

=12

Ω  

Turn-Off Delay Time  

Fall Time  

—  

24  

—  

—  

17  

—  

Total Gate Charge  

Gate to Source Charge  

Gate to Drain (

“

Miller

”

)Charge  

Q

g  

—  

13  

I

D

=9A V

DD

=100V  

V

GS

= 10V  

Q

gs  

Q

gd  

—  

4

—  

—  

nC  

—  

4.5  

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.

 

P

age  

2

o

f 10  

2015V01  

CS630 A4H  

R

○

Source-Drain Diode Characteristics  

Rating  

Typ.  

—  

Parameter  

Test Conditions  

Symbol  

Units  

Min.  

—  

Max.  

9

Continuous Source Current (Body Diode)  

Maximum Pulsed Current (Body Diode)  

Diode Forward

V

o

ltage  

I

S  

A

A

I

SM  

V

SD  

trr  

—  

—  

36  

I

S

=9A,V

GS

=0V  

—  

—  

1.5  

V

Reverse Recovery Time  

I

S

=9A,T

j

= 25

°

C  

—  

120  

495  

ns  

nC  

dI

F

/dt=100A/us,  

V

GS

=0V  

Reverse Recovery Charge  

Qrr  

—  

Pulse width tp

≤

300

µ

s,

δ≤

2%  

Parameter  

Typ.  

1.51  

62.5  

Symbol  

Units  

Junction-to-Case  

R

θ

JC  

R

θ

JA  

℃

/W  

℃

/W  

Junction-to-Ambient  

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.

 

P

age  

3

o

f 10  

2015V01  

CS630 A4H  

R

○

Characteristics Curve

：

 

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.

 

P

age  

4

o

f 10  

2015V01  

CS630 A4H  

R

○

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.

 

P

age  

5

o

f 10  

2015V01  

CS630 A4H  

R

○

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.

 

P

age  

6

o

f 10  

2015V01  

CS630 A4H  

R

○

T

e

st Circuit and Waveform  

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.

 

P

age  

7

o

f 10  

2015V01  

CS630 A4H  

R

○

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.

 

P

age  

8

o

f 10  

2015V01  

CS630 A4H  

R

○

Package Information  

V

a

lues(mm)  

Items  

MIN  

6.30  

0

MAX  

6.90  

0.13  

6.30  

2.50  

0.60  

0.90  

1.00  

0.60  

1.00  

10.30  

3.10  

1.00  

5.50  

2.49  

A

A1  

B

5.70  

2.10  

0.30  

0.60  

0.70  

0.30  

0.70  

9.60  

2.70  

0.60  

5.10  

2.09  

C

D

E1  

E2  

F

G

L1  

L2  

H

M

N

R

0.3  

T

1.40  

5.10  

1.60  

6.30  

Y

TO-252

Package  

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.

 

P

age  

9

o

f 10  

2015V01  

CS630 A4H  

R

○

The name and content of poisonous and harmful material in products  

Hazardous Substance  

Part

’

s Name  

Pb  

Hg  

Cd  

Cr(VI)  

PBB  

PBDE  

≤

0.1%  

≤

0.1%  

≤

0.01%  

≤

0.1%  

≤

0.1%  

≤

0.1%  

Limit  

Lead Frame  

Molding Compound  

Chip  

○

○

○

○

×

○

○

○

○

○

○

○

○

○

○

○

○

○

○

○

○

○

○

○

○

○

○

○

Wire Bonding  

Solder  

○

○

○

：

means the hazardous material is under the criterion of SJ/T11363-2006.  

×

：

means the hazardous material exceeds the criterion of SJ/T11363-2006.  

Note  

The plumbum element of solder exist in products presently, but within the allowed  

range of Eurogroup

’

s RoHS.  

Warnings  

1.

Exceeding the maximum ratings of the device in performance may cause damage to the device,  

even the permanent failure, which may affect the dependability of the machine. It is suggested  

to be used under 80 percent of the maximum ratings of the device.  

2.

When installing the heatsink, please pay attention to the torsional moment and the smoothness  

of the heatsink.  

3.

VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect  

the device from being damaged by the static electricity when using it.  

4.

This publication is made by Huajing Microelectronics and subject to regular change without  

notice.  

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.  

Add

：

No.14 Liangxi RD. Wuxi, Jiangsu, China

 

Mail:214061  

H

T

U

UTH  

Tel: +86 0510-85807228

 

Fax: +86- 0510-85800864  

Marketing Part

：  

Post

：

214061  

Tel

：

+86 0510-81805277/81805336  

Fax: +86

 

0510-85800360/85803016  

E-mail

：

Application and Service

：

Post

：

214061

T

el

 

/ Fax

：

+86- 0510-81805243/81805110  

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.

 

P

age  

10 of 10  

2015V01