Wuxi-China-Resources-Huajing-Microelectronics-HGE055NE4A
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Silicon N-Channel Power MOSFET
HGE055NE4A
R
○
General Description
：
V
DSS
45
18
V
A
HGE055NE4A, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the high density Trench technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is SOP8,
which accords with the RoHS standard.
I
D
P
D
(T
a
=25
℃
)
R
DS(ON) Typ@Vgs=10V
R
DS(ON) Typ@Vgs=4.5V
3.1
4.4
6.5
W
m
Ω
m
Ω
Features
：
l
Fast Switching
l
Low ON Resistance
(
Rdso
n
≤
5.5
m
Ω
)
l
Low Gate Charge
l
Low Reverse transfer capacitances
l
100% Single Pulse avalanche energy
T
e
st
Applications
：
l
l
Power switch circuit of adaptor and charger.
Synchronus Rectification in DC/DC Converters
Absolute
（
T
a
= 25
℃
unless otherwise specified
）
：
Parameter
Symbol
V
DSS
Rating
Units
Drain-to-Source
V
o
ltage
45
V
A
Continuous Drain Current
18
I
D
Continuous Drain Current T
C
= 100
°
C
Pulsed Drain Current
11.9
A
a1
72
±
18
A
I
DM
Gate-to-Source
V
o
ltage
V
GS
V
a2
Single Pulse Avalanche Energy
Power Dissipation
115.5
mJ
W
℃
E
AS
3.1
P
D
Operating Junction and Storage Temperature Range
T
J
，
T
stg
150
，
–
55 to 150
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HGE055NE4A
R
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Electrical Characteristics
（
T
a
= 25
℃
unless otherwise specified
）
：
OFF Characteristics
Rating
Typ.
—
Symbol
V
DSS
Parameter
Test Conditions
Units
Min.
45
Max.
—
V
GS
=0
V
,
I
D
=250
µ
A
Drain to Source Breakdown
V
o
ltage
V
V
DS
=450
V
,
V
GS
= 0
V
,
T
A
= 25
℃
V
DS
=36
V
,
V
GS
= 0
V
,
—
—
—
1
Drain to Source Leakage Current
µ
A
I
DSS
—
100
T
A
= 125
℃
V
GS
=+18V
V
GS
=-18V
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
nA
nA
I
GSS(F)
I
GSS(R)
—
—
—
—
100
-100
ON Characteristics
Rating
Parameter
Test Conditions
Symbol
Units
Min.
—
Typ. Max.
V
GS
=10
V
,
I
D
=18A
4.4
6.5
5.5
8.2
m
Ω
m
Ω
V
Drain-to-Source On-Resistance
Gate Threshold
V
o
ltage
R
DS(ON)
V
GS(TH)
V
GS
=4.5
V
,
I
D
=14A
V
DS
= V
GS
, I
D
= 250
µ
A
—
1.0 1.75 2.5
Pulse width tp
≤
300
µ
s,
δ≤
2%
Dynamic Characteristics
Rating
Parameter
Test Conditions
Symbol
Units
Min.
—
Typ.
2
Max.
—
f=1MHz
Gate resistance
R
g
Ω
Input Capacitance
C
iss
C
oss
C
rss
—
—
1156
493
32
V
GS
= 0V V
DS
= 25V
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
—
—
pF
—
—
Resistive Switching Characteristics
Rating
Parameter
Test Conditions
Symbol
Units
ns
Min. Typ. Max.
Turn-on Delay Time
Rise Time
t
d(ON)
tr
t
d(OFF)
t
f
—
—
—
—
—
—
—
—
—
—
—
—
—
—
10.4
6
V
DD
=25
V
,
I
D
= 19A,
V
G
=10 V R
G
= 3
Ω
Turn-Off Delay Time
Fall Time
30.8
6.4
24
Total Gate Charge
Gate to Source Charge
Gate to Drain (
“
Miller
”
)Charge
Q
g
V
GS
=10
V
,
V
DD
=25
V
,
I
D
=19A
Q
gs
Q
gd
3.2
6.7
nC
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Source-Drain Diode Characteristics
Rating
Test
Conditions
Parameter
Symbol
Units
Min. Typ. Max.
Continuous Source Current (Body Diode)
Maximum Pulsed Current (Body Diode)
Diode Forward
V
o
ltage
I
S
—
—
—
—
—
—
—
18
72
A
A
T
C
= 25
°
C
I
SM
V
SD
trr
I
S
=18A,V
GS
=0V
—
1.2
V
Reverse Recovery Time
41.9
40
ns
nC
di/dt=100A/us
IF=20A
Reverse Recovery Charge
Qrr
Pulse width tp
≤
300
µ
s,
δ≤
2%
Parameter
Max.
40
Symbol
Units
Junction-to-Ambient
R
℃
/W
θ
JA
Notes
：
a1
：
Repetitive rating; pulse width limited by maximum junction temperature
a2
：
L=0.5mH, I
D
=21.5A, Start T
J
=25
℃
a3
：
Recommend soldering temperature defined by IPC/JEDEC J-STD 020
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R
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Characteristics Curve
：
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R
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100
10
100
Note:
1.V
DS
=5V
2.250us Pulse Test
10
1
Tj=150
℃
Tj=150
℃
1
Tj=25
℃
Tj=25
℃
0.1
0.01
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1
1.5
2
2.5
3
3.5
4
V
SD
，
Source-to-Drain Voltage[V]
V
GS
,Gate-to-Source Voltage[V]
Figure 7 Typical
Body Diode Transfer
Characteristics
Figure 6 Typical
Transfer Characteristics
8.0
1.8
1.6
1.4
1.2
1
PULSED TEST
T = 25
℃
j
VGS=10V
ID=18A
7.0
6.0
5.0
4.0
3.0
2.0
VGS=4.5V
ID=14A
V
GS
= 4.5V
0.8
0.6
0.4
0.2
V
GS
= 10V
0
5
10
15
20
0
-50
0
50
100
150
I
D
,Drain Current,A
T
J
,Junction Temperature(
℃
)
Figure 9. Normalized On Resistance vs
Junction Temperature
Figure 8. Drain-to-Source On Resistance vs
Drain Current
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R
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HGE055NE4A
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T
e
st Circuit and Waveform
Figure 14. Gate Charge Test Circuit
Figure 15. Gate Charge
W
a
veforms
Figure 16. Resistive Switching Test Circuit
Figure 17. Resistive Switching Waveforms
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HGE055NE4A
R
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Figure 18. Diode Reverse Recovery Test Circuit
Figure 19. Diode Reverse Recovery Waveform
Figure20.Unclamped Inductive Switching Test Circuit
Figure21.Unclamped Inductive Switching
W
a
veform
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Package Information
：
D
c
L
b
e
V
a
lues(mm)
Items
MIN
1.30
MAX
1.80
A
A1
A2
E
0.10
1.30
5.80
3.80
4.80
0.40
0.25
1.50
6.20
4.00
5.00
0.90
E1
D
L
e
1.27 TYP
0.20 TYP
b
0.37
0.47
c
0
°
8
°
θ
3
SOP8
Package
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R
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The name and content of poisonous and harmful material in products
Hazardous Substance
Part
’
s Name
Pb
≤
Hg
≤
Cd
≤
Cr(VI)
PBB
PBDE
DIBP
DEHP
DBP
BBP
Limit
≤
0.1%
≤
0.1%
≤
0.1%
≤
0.1%
≤
0.1%
≤
0.1%
≤
0.1%
0.1%
○
○
○
○
×
0.1%
○
○
○
○
○
0.01%
○
Lead Frame
Molding
Chip
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
Wire Bonding
Solder
○
○
○
：
Means the hazardous material is under the criterion of
2011/65/EU
.
×
：
Means the hazardous material exceeds the criterion of
2011/65/EU
.
Note
The plumbum element of solder exist in products presently, but within the allowed range
of Eurogroup
’
s RoHS.
Warnings
1.
Exceeding the maximum ratings of the device in performance may cause damage to the device,
even the permanent failure, which may affect the dependability of the machine. It is suggested
to be used under 80 percent of the maximum ratings of the device.
2.
When installing the heat sink, please pay attention to the torsional moment and the smoothness
of the heat sink.
3.
VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect
the device from being damaged by the static electricity when using it.
4.
This publication is made by Huajing Microelectronics and subject to regular change without
notice.
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.
Add
：
No.14 Liangxi RD. Wuxi, Jiangsu, China
Mail:214061
H
T
U
UTH
Tel: +86 0510-85807228
Fax: +86- 0510-85800864
Marketing Part
：
Post
：
214061
Tel
：
+86 0510-81805277/81805336
Fax: +86
0510-85800360/85803016
Application and Service
：
Post
：
214061
T
el
/ Fax
：
+86- 0510-81805243/81805110
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