Wuxi-NCE-Power-Semiconductor-NCE0110K

Pb Free Product  

NCE0110K  

NCE N-Channel

Enhancement Mode Power MOSFET  

Description  

The NCE0110K uses advanced trench technology and  

design to provide excellent R

DS(ON)

with low gate charge. It  

can be used in a wide variety of applications.  

General Features  

●

V

DS

=100

V

,

I

D

=9.6A  

R

DS(ON)

< 140m

Ω

@ V

GS

=10V (Typ:108m

Ω

)  

●

High density cell design for ultra low Rdson  

●

Fully characterized avalanche voltage and current  

●

Good stability and uniformity with high E

AS  

●

Excellent package for good heat dissipation  

●

Special process technology for high ESD capability  

Schematic diagram  

Application  

●

Power switching application  

●

Hard switched and high frequency circuits  

Marking and pin assignment  

●

Uninterruptible power supply  

100% UIS TESTED!  

100%

∆

Vds TESTED!  

TO-252-2L top view  

Package Marking and Ordering Information  

Device Marking  

Device  

Device Package  

Reel Size  

Tape width  

Quantity  

NCE0110K  

NCE0110K  

TO-252-2L  

–

–

–

Absolute Maximum Ratings (T

C

=25

℃

unless otherwise noted)  

Parameter  

Symbol  

Limit  

100  

Unit  

Drain-Source Voltage  

Gate-Source Voltage  

Drain Current-Continuous  

V

V

A

V

DS  

±20  

V

GS  

9.6  

6.5  

I

D  

Drain Current-Continuous(T

C

=100

℃

)  

Pulsed Drain Current  

I

D

(100

℃

)  

I

DM  

A

A

38.4  

30  

Maximum Power Dissipation  

W

P

D  

W/

℃  

mJ  

℃

Derating factor  

Single pulse avalanche energy

(Note 5)  

0.2  

E

AS  

20  

Operating Junction and Storage Temperature Range  

-55

T

o

1

75  

T

J

,T

STG  

Wuxi NCE Power Co., Ltd  

Page 1  

v1.2  

Pb Free Product  

Thermal Characteristic  

NCE0110K  

Thermal Resistance,Junction-to-Case

(Note 2)  

R

θ

JC  

5

℃

/W  

Electrical Characteristics (T

C

=25

℃

unless otherwise noted)  

Parameter  

Symbol  

Condition  

Min Typ  

Max  

Unit  

Off Characteristics  

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

Gate-Body Leakage Current  

On Characteristics

(Note 3)  

Gate Threshold Voltage  

Drain-Source On-State Resistance  

Forward Transconductance  

Dynamic Characteristics

(Note4)  

Input Capacitance  

BV

DSS  

I

DSS  

V

GS

=0V I

D

=250

μ

A  

V

DS

=100V,V

GS

=0V  

V

GS

=±20V,V

DS

=0V  

100  

110  

–

1

V

–

–

–

–

μ

A  

nA  

I

GSS  

±100  

V

GS(th)  

R

DS(ON)  

g

FS  

V

DS

=V

GS

,I

D

=250

μ

A  

V

GS

=10V, I

D

=6A  

V

DS

=25V,I

D

=6A  

1.2  

–

1.8  

108  

–

2.5  

140  

–

V

m

Ω  

S

3.5  

C

lss  

C

oss  

C

rss  

–

–

–

690  

120  

90  

–

–

–

PF  

PF  

PF  

V

DS

=25V,V

GS

=0V,  

Output Capacitance  

F=1.0MHz  

Reverse Transfer Capacitance  

Switching Characteristics

(Note 4)  

Turn-on Delay Time  

t

d(on)  

t

r  

t

d(off)  

t

f  

–

–

–

–

–

–

–

11  

7.4  

35  

–

–

–

–

nS  

nS  

nS  

nS  

nC  

nC  

nC  

Turn-on Rise Time  

V

DD

=30V,I

D

=2A,R

L

=15

Ω  

V

Turn-Off Delay Time  

Turn-Off Fall Time  

9.1  

15.5  

3.2  

4.7  

Total Gate Charge  

Q

g  

Q

gs  

Q

gd  

V

DS

=30V,I

D

=3A,  

Gate-Source Charge  

–

–

V

Gate-Drain Charge  

Drain-Source Diode Characteristics  

Diode Forward Voltage

(Note 3)  

Diode Forward Current

(Note 2)  

Reverse Recovery Time  

V

SD  

I

S  

V

GS

=0V,I

S

=9.6A  

–

–

–

–

–

1.2  

9.6  

V

A

–

t

rr  

TJ = 25°C, IF =9.6A  

di/dt = 100A/

μ

s

(Note3)  

21  

97  

nS  

nC  

Reverse Recovery Charge  

Forward Turn-On Time  

Qrr  

t

on  

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)  

Notes:  

1.

Repetitive Rating: Pulse width limited by maximum junction temperature.  

2.

Surface Mounted on FR4 Board, t

 

≤

10 sec.  

3.

Pulse Test: Pulse Width

 

≤

300

μ

s, Duty Cycle

 

≤

2%.  

4.

Guaranteed by design, not subject to production  

5.

EAS condition

：

Tj=25

℃

,V

DD

=50V,V

G

=10V,L=0.5mH,Rg=25

Ω

 

Wuxi NCE Power Co., Ltd  

Page 2  

v1.2  

Pb Free Product  

NCE0110K  

Test Circuit  

1) E

AS

test Circuit  

2) Gate charge test Circuit  

3) Switch Time Test Circuit  

Wuxi NCE Power Co., Ltd  

Page 3  

v1.2  

Pb Free Product  

NCE0110K  

Typical Electrical and Thermal Characteristics (Curves)  

T

J

-Junction

T

e

mperature(

℃

)  

Vds Drain-Source Voltage (V)  

Figure 1 Output Characteristics  

Figure 4 Rdson-JunctionTemperature  

Vgs Gate-Source Voltage (V)  

Qg Gate Charge (nC)  

Figure 2 Transfer Characteristics  

Figure 5 Gate Charge  

I

D

– Drain Current (A)  

Vsd Source-Drain Voltage (V)  

Figure 3 Rdson-

Drain Current  

Figure 6 Source- Drain Diode Forward  

Wuxi NCE Power Co., Ltd  

Page 4  

v1.2  

Pb Free Product  

NCE0110K  

T

J

-Junction

T

e

mperature(

℃

)  

Vds Drain-Source Voltage (V)  

Figure 7 Capacitance vs Vds  

Figure 9 BV

DSS

vs Junction Temperature  

T

J

-Junction

T

e

mperature(

℃

)  

Vds Drain-Source Voltage (V)  

Figure 8 Safe Operation Area  

Figure 10 V

GS(th)

vs Junction Temperature  

Square Wave Pluse Duration(sec)  

Figure 11 Normalized Maximum Transient Thermal Impedance  

Wuxi NCE Power Co., Ltd  

Page 5  

v1.2  

Pb Free Product  

TO-252 Package Information  

NCE0110K  

Dimensions In Millimeters  

Dimensions In Inches  

Symbol  

Min.  

Max.  

2.400  

0.127  

0.860  

0.580  

6.700  

5.460  

Min.  

0.087  

0.000  

0.026  

0.018  

0.256  

0.201  

Max.  

0.094  

0.005  

0.034  

0.023  

0.264  

0.215  

A

A1  

b

2.200  

0.000  

0.660  

0.460  

6.500  

5.100  

c

D

D1  

D2  

E

4.830 TYP.  

0.190 TYP.  

6.000  

2.186  

9.800  

6.200  

2.386  

0.236  

0.086  

0.386  

0.244  

0.094  

0.409  

e

L

10.400  

L1  

L2  

L3  

L4  

Φ

θ

2.900 TYP.  

1.600 TYP.  

0.114 TYP.  

0.063 TYP.  

1.400  

1.700  

0.055  

0.067  

0.600  

1.100  

0°  

1.000  

1.300  

8°  

0.024  

0.043  

0°  

0.039  

0.051  

8°  

h

0.000  

0.300  

0.000  

0.012  

V

5.350 TYP.  

0.211 TYP.  

Wuxi NCE Power Co., Ltd  

Page 6  

v1.2  

Pb Free Product  

NCE0110K  

Attention:  

■

Any and all NCE power products described or contained herein do not have specifications that can handle applications that  

require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications  

whose failure can be

 

reasonably expected to result in serious physical and/or material damage. Consult  

with your NCE

 

power representative nearest you before using any NCE power products described or contained herein in  

such applications.  

■

NCE power

 

assumes no responsibility for equipment failures that result from using products at values  

that exceed,

 

even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters)  

listed in products specifications of any and all NCE power products described or contained herein.  

■

Specifications of any and all NCE power products described or contained herein stipulate the performance, characteristics,  

and functions of the described products in the independent state, and are not guarantees of the performance, characteristics,  

and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states  

that cannot

 

be evaluated in an independent device, the customer should always evaluate and test  

devices mounted

 

in the

 

customer’s products or equipment.  

■

NCE power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all  

semiconductor products fail

 

with some probability. It is possible that these probabilistic failures could  

give rise to

 

accidents or events that could

 

endanger human lives, that could give rise to smoke or fire, or that could  

cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or  

events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe  

design, redundant design, and structural design.  

■

In the event that any or all NCE power products(including technical data, services) described or contained herein are  

controlled under any of applicable local export control laws and regulations, such products must not be exported without  

obtaining the export license from the authorities concerned in accordance with the above law.  

■

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical,  

including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written  

permission of NCE power Semiconductor CO.,LTD.  

■

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume  

production. NCE power believes information herein is accurate and reliable, but no guarantees are made or implied  

regarding its use or any infringements of intellectual property rights or other rights of third parties.  

■

Any and all information described or contained herein are subject to change without notice due to  

product/technology improvement, etc. When designing equipment, refer to the “Delivery Specification” for the NCE power  

product that you intend to use.  

■

This catalog provides information as of Sep.2010. Specifications and information herein are subject to change without  

notice.  

Wuxi NCE Power Co., Ltd  

Page 7  

v1.2