Wuxi-NCE-Power-Semiconductor-NCE01P18D
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NCE01P18D
NCE P-Channel
Enhancement Mode Power MOSFET
Description
The NCE01P18D uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate charge. It can
be used in a wide variety of applications. It is ESD protested.
General Features
●
V
DS
=-100
V
,
I
D
=-18A
R
DS(ON)
<100m
Ω
@ V
GS
=-10V (Typ:85m
Ω
)
Schematic diagram
R
DS(ON)
<120m
Ω
@ V
GS
=-10V (Typ:95m
Ω
)
●
Super high dense cell design
●
Advanced trench process technology
●
Reliable and rugged
●
High density cell design for ultra low On-Resistance
Application
●
Power management in notebook computer
●
Portable equipment and battery powered systems
Marking and pin assignment
100% UIS TESTED!
100%
∆
Vds TESTED!
TO-263-2L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
NCE01P18D
NCE01P18D
TO-263-2L
–
–
–
Absolute Maximum Ratings (T
C
=25
℃
unless otherwise noted)
Parameter
Symbol
Limit
-100
±20
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
V
V
V
DS
V
GS
-18
-12
A
I
D
I
D
(100
℃
)
I
DM
Drain Current-Continuous(T
C
=100
℃
)
Pulsed Drain Current
Single pulse avalanche energy
(Note 5)
A
-100
A
E
AS
170
mJ
W
Maximum Power Dissipation
70
P
D
Derating factor
0.47
W/
℃
℃
Operating Junction and Storage Temperature Range
-55
T
o
1
75
T
J
,T
STG
Thermal Characteristic
Thermal Resistance,Junction-to-Case
(Note 2)
R
θ
Jc
2.14
℃
/W
Wuxi NCE Power
Co., Ltd
Page 1
v3.0
NCE01P18D
Electrical Characteristics (T
C
=25
℃
unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics
(Note 3)
BV
DSS
I
DSS
V
GS
=0V I
D
=-250
μ
A
V
DS
=-100V,V
GS
=0V
V
GS
=±20V,V
DS
=0V
-100
–
–
–
–
1
V
–
–
μ
A
μ
A
I
GSS
±20
Gate Threshold Voltage
V
GS(th)
R
DS(ON)
g
FS
V
DS
=V
GS
,I
D
=-250
μ
A
V
GS
=-10V, I
D
=-16A
V
GS
=-4.5V, I
D
=-16A
V
DS
=-50V,I
D
=-10A
-1
–
-1.9
85
95
–
-3
100
120
–
V
m
Ω
S
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics
(Note4)
Input Capacitance
5
C
lss
C
oss
C
rss
–
–
–
3810
129
–
–
–
PF
PF
PF
V
DS
=-50V,V
GS
=0V,
F=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
(Note 4)
Turn-on Delay Time
125
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
–
–
–
16
73
–
–
–
–
–
–
–
nS
nS
nS
nS
nC
nC
nC
Turn-on Rise Time
V
DD
=-50V,I
D
=-16A
V
GS
=-10V,R
GEN
=9.1
Ω
Turn-Off Delay Time
34
Turn-Off Fall Time
57
Total Gate Charge
Q
g
Q
gs
Q
gd
70
V
DS
=-50V,I
D
=-16A,
Gate-Source Charge
12.5
15.5
V
GS
=-10V
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
Diode Forward Current
(Note 2)
Reverse Recovery Time
V
SD
I
S
V
GS
=0V,I
S
=-10A
–
–
–
–
–
–
-1.2
V
A
–
-18
t
rr
TJ = 25°C, IF =-16A
di/dt = 100A/
μ
s
(Note3)
88.3
65.9
–
–
nS
nC
Reverse Recovery Charge
Forward Turn-On Time
Qrr
t
on
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t
≤
10 sec.
3.
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
4.
Guaranteed by design, not subject to production
5.
EAS condition
：
Tj=25
℃
,V
DD
=-50V,V
G
=-10V,L=0.5mH,Rg=25
Ω
Wuxi NCE Power
Co., Ltd
Page 2
v3.0
NCE01P18D
Test Circuit
1) E
AS
Test Circuit
2) Gate Charge Test Circuit
3) Switch Time Test Circuit
Wuxi NCE Power
Co., Ltd
Page 3
v3.0
NCE01P18D
Typical Electrical and Thermal Characteristics (Curves)
-Vds Drain-Source Voltage (V)
T
J
-Junction
T
e
mperature(
℃
)
Figure 1 Output Characteristics
Figure 4 Rdson-JunctionTemperature
-Vgs Gate-Source Voltage (V)
Qg Gate Charge (nC)
Figure 2 Transfer Characteristics
Figure 5 Gate Charge
–
I
D
– Drain Current (A)
-Vsd Source-Drain Voltage (V)
Figure 3 Rdson-
Drain Current
Figure 6 Source- Drain Diode Forward
Wuxi NCE Power
Co., Ltd
Page 4
v3.0
NCE01P18D
-Vds Drain-Source Voltage (V)
T
C
Case
T
e
mperature(
℃
)
Figure 7 Capacitance vs Vds
Figure 9 Drain Current vs Case Temperature
Vds Drain-Source Voltage (V)
T
C
-Case
T
e
mperature(
℃
)
Figure 8 Safe Operation Area
Figure 10 Power De-rating
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power
Co., Ltd
Page 5
v3.0
NCE01P18D
Attention:
■
Any and all NCE power products described or contained herein do not have specifications that can handle applications that
require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications
whose failure can be
reasonably expected to result in serious physical and/or material damage. Consult
with your NCE
power representative nearest you before using any NCE power products described or contained herein in
such applications.
■
NCE power
assumes no responsibility for equipment failures that result from using products at values
that exceed,
even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters)
listed in products specifications of any and all NCE power products described or contained herein.
■
Specifications of any and all NCE power products described or contained herein stipulate the performance, characteristics,
and functions of the described products in the independent state, and are not guarantees of the performance, characteristics,
and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states
that cannot
be evaluated in an independent device, the customer should always evaluate and test
devices mounted
in the
customer’s products or equipment.
■
NCE power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail
with some probability. It is possible that these probabilistic failures could
give rise to
accidents or events that could
endanger human lives, that could give rise to smoke or fire, or that could
cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or
events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe
design, redundant design, and structural design.
■
In the event that any or all NCE power products(including technical data, services) described or contained herein are
controlled under any of applicable local export control laws and regulations, such products must not be exported without
obtaining the export license from the authorities concerned in accordance with the above law.
■
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including
photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission
of NCE power Semiconductor CO.,LTD.
■
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume
production. NCE power believes information herein is accurate and reliable, but no guarantees are made or implied
regarding its use or any infringements of intellectual property rights or other rights of third parties.
■
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the “Delivery Specification” for the NCE power
product that you intend to use.
■
This catalog provides information as of Sep.2010. Specifications and information herein are subject to change without notice.
Wuxi NCE Power
Co., Ltd
Page 8
v3.0
