Wuxi-NCE-Power-Semiconductor-NCE0202M
| Part # | Wuxi-NCE-Power-Semiconductor-NCE0202M |
Download  | Wuxi-NCE-Power-Semiconductor-NCE0202M |
NCE0202M
NCE N-Channel
Enhancement Mode Power MOSFET
Description
The NCE0202M uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate charge. It
can be used in a wide variety of applications.
D
G
General Features
●
V
DS
= 200
V
,
I
D
=2A
S
R
DS(ON)
< 580m
Ω
@ V
GS
=10V (Typ:520m
Ω
)
Schematic diagram
R
DS(ON)
< 600m
Ω
@ V
GS
=10V (Typ:540m
Ω
)
●
High density cell design for ultra low Rdson
●
Fully characterized avalanche voltage and current
●
Excellent package for good heat dissipation
Application
●
Power switching application
●
Hard switched and high frequency circuits
●
Uninterruptible power supply
SOT-89 -3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
0202M
NCE0202M
SOT-89-3L
Ø330mm
12mm
2500 units
Absolute Maximum Ratings (T
A
=25
℃
unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
200
V
V
V
DS
Gate-Source Voltage
±20
V
GS
Drain Current-Continuous
Drain Current-Pulsed
(Note 1)
2
A
I
D
8
A
I
DM
Maximum Power Dissipation
1.5
W
℃
P
D
Operating Junction and Storage Temperature Range
-55
T
o
1
50
T
J
,T
STG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient
(Note 2)
R
θ
JA
83.3
℃
/W
Electrical Characteristics (T
A
=25
℃
unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BV
DSS
I
DSS
V
GS
=0V I
D
=250
μ
A
200
–
–
–
–
V
V
DS
=200V,V
GS
=0V
1
μ
A
Wuxi NCE Power Co., Ltd
Page 1
v1.0
NCE0202M
Gate-Body Leakage Current
I
GSS
V
GS
=±20V,V
DS
=0V
–
–
±100
nA
On Characteristics
(Note 3)
Gate Threshold Voltage
V
GS(th)
R
DS(ON)
R
DS(ON)
g
FS
V
DS
=V
GS
,I
D
=250
μ
A
V
GS
=10V, I
D
=2A
V
GS
=4.5V, I
D
=2A
V
DS
=15V,I
D
=2A
1.2
1.8
520
540
8
2.5
580
600
–
V
–
–
–
m
Ω
m
Ω
S
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics
(Note4)
Input Capacitance
C
lss
C
oss
C
rss
–
–
–
580
90
3
–
–
–
PF
PF
PF
V
DS
=25V,V
GS
=0V,
F=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
(Note 4)
Turn-on Delay Time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
–
–
–
10
12
15
15
12
2.5
3.8
–
–
–
–
nS
nS
nS
nS
nC
nC
nC
Turn-on Rise Time
V
DD
=100V, R
L
=15
Ω
V
GS
=10V,R
G
=2.5
Ω
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Q
g
Q
gs
Q
gd
V
DS
=100V,I
D
=2A,
Gate-Source Charge
–
–
V
GS
=10V
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
Diode Forward Current
(Note 2)
V
SD
I
S
V
GS
=0V,I
S
=2A
–
–
–
–
1.2
2
V
A
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t
≤
10 sec.
3.
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
4.
Guaranteed by design, not subject to production
Wuxi NCE Power Co., Ltd
Page 2
v1.0
NCE0202M
Test Circuit
1
）
E
AS
test circuit
2
）
Gate charge test circuit
3
）
Switch Time Test Circuit
Wuxi NCE Power Co., Ltd
Page 3
v1.0
Typical Electrical and Thermal Characteristics (Curves)
Vds Drain-Source Voltage (V)
T
J
-Junction
T
e
mperature(
℃
)
Figure 1 Output Characteristics
Figure 4 Rdson-JunctionTemperature
Vgs Gate-Source Voltage (V)
Qg Gate Charge (nC)
Figure 2 Transfer Characteristics
Figure 5 Gate Charge
I
D
– Drain Current (A)
Vsd Source-Drain Voltage (V)
Figure 3 Rdson-
Drain Current
Figure 6 Source- Drain Diode Forward
Wuxi NCE Power Co., Ltd
Page 4
v1.0
Vds Drain-Source Voltage (V)
T
J
-Junction
T
e
mperature(
℃
)
Figure 7 Capacitance vs Vds
Figure 9 BV
DSS
vs Junction Temperature
Vds Drain-Source Voltage (V)
T
J
-Junction
T
e
mperature(
℃
)
Figure 8 Safe Operation Area
Figure 10 V
GS(th)
vs Junction Temperature
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Co., Ltd
Page 5
v1.0
SOT-89-3L Package Information
Notes
1. All dimensions are in millimeters.
2. Tolerance ±0.10mm (4 mil) unless otherwise specified
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
Wuxi NCE Power Co., Ltd
Page 6
v1.0
Attention:
■
Any and all NCE power products described or contained herein do not have specifications that can handle applications that
require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications
whose failure can be
reasonably expected to result in serious physical and/or material damage. Consult
with your NCE
power representative nearest you before using any NCE power products described or contained herein in
such applications.
■
NCE power
assumes no responsibility for equipment failures that result from using products at values
that exceed,
even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters)
listed in products specifications of any and all NCE power products described or contained herein.
■
Specifications of any and all NCE power products described or contained herein stipulate the performance, characteristics,
and functions of the described products in the independent state, and are not guarantees of the performance, characteristics,
and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states
that cannot
be evaluated in an independent device, the customer should always evaluate and test
devices mounted
in the
customer’s products or equipment.
■
NCE power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail
with some probability. It is possible that these probabilistic failures could
give rise to
accidents or events that could
endanger human lives, that could give rise to smoke or fire, or that could
cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or
events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe
design, redundant design, and structural design.
■
In the event that any or all NCE power products(including technical data, services) described or contained herein are
controlled under any of applicable local export control laws and regulations, such products must not be exported without
obtaining the export license from the authorities concerned in accordance with the above law.
■
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including
photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission
of NCE power Semiconductor CO.,LTD.
■
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume
production. NCE power believes information herein is accurate and reliable, but no guarantees are made or implied
regarding its use or any infringements of intellectual property rights or other rights of third parties.
■
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the “Delivery Specification” for the NCE power
product that you intend to use.
■
This catalog provides information as of Sep.2010. Specifications and information herein are subject to change without notice.
Wuxi NCE Power Co., Ltd
Page 7
v1.0
