Wuxi-NCE-Power-Semiconductor-NCE2003
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Pb Free Product
NCE2003
N and P-Channel Enhancement Mode Power MOSFET
Description
The NCE2003 uses advanced trench technology to provide
excellent R
DS(ON)
and low gate charge . The complementary
MOSFETs may be used to form a level shifted high side
switch, and for a host of other applications.
General Features
N-channel
P-channel
●
N-Channel
V
DS
= 20
V
,
I
D
=3A
R
DS(ON)
< 35m
Ω
@ V
GS
=4.5V
DS(ON)
< 55m
Ω
@ V
GS
=2.5V
R
●
P-Channel
V
DS
= -20
V
,
I
D
= -3A
R
DS(ON)
< 75m
Ω
@ V
GS
=-4.5V
DS(ON)
< 100m
Ω
@ V
GS
=-2.5V
Marking and pin Assignment
R
●
High power and current handing capability
●
Lead free product is acquired
●
Surface mount package
SOT-23-6L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
2003
NCE2003
SOT-23-6L
Ø180mm
8mm
3000 units
Absolute Maximum Ratings (T
A
=25
℃
unless otherwise noted)
Parameter
Symbol
V
DS
N-Channel P-Channel
Unit
Drain-Source Voltage
Gate-Source Voltage
20
-20
±12
V
V
V
GS
±12
T
A
=25
℃
T
A
=70
℃
3
2.4
-3
Continuous Drain Current
I
D
A
-2.4
Pulsed Drain Current
(Note 1)
Maximum Power Dissipation
I
DM
P
D
13
-13
A
T
A
=25
℃
0.8
0.8
W
℃
Operating Junction and Storage Temperature Range
T
J
,T
STG
-55
T
o
1
50
-55
T
o
1
50
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient
(Note2)
R
θ
JA
R
θ
JA
N-Ch
P-Ch
156
156
℃
/W
℃
/W
Thermal Resistance,Junction-to-Ambient
(Note2)
Wuxi NCE Power Co., Ltd
Page 1
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Pb Free Product
NCE2003
N-CH Electrical Characteristics (T
A
=25
℃
unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics
(Note 3)
BV
DSS
I
DSS
V
GS
=0V I
D
=250
μ
A
V
DS
=20V,V
GS
=0V
V
GS
=±12V,V
DS
=0V
20
–
22
–
–
1
V
μ
A
nA
I
GSS
–
–
±100
Gate Threshold Voltage
V
GS(th)
R
DS(ON)
g
FS
V
DS
=V
GS
,I
D
=250
μ
A
V
GS
=2.5V, I
D
=2.8A
V
GS
=4.5V, I
D
=3A
V
DS
=5V,I
D
=3A
0.5
0.75
36
28
8
1.2
55
35
–
V
m
Ω
m
Ω
S
–
–
–
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics
(Note4)
Input Capacitance
C
lss
C
oss
C
rss
–
–
–
260
48
–
–
–
PF
PF
PF
V
DS
=10V,V
GS
=0V,
Output Capacitance
F=1.0MHz
Reverse Transfer Capacitance
Switching Characteristics
(Note 4)
Turn-on Delay Time
27
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
–
–
–
2.5
3.2
21
–
–
nS
nS
nS
nS
nC
nC
nC
Turn-on Rise Time
V
DD
=10V, R
L
=3.3
Ω
V
GS
=4.5V,R
GEN
=6
Ω
Turn-Off Delay Time
–
Turn-Off Fall Time
3
–
Total Gate Charge
Q
g
Q
gs
Q
gd
2.9
0.4
0.6
5
–
V
DS
=10V,I
D
=3A,
Gate-Source Charge
V
GS
=4.5V
Gate-Drain Charge
–
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
Diode Forward Current
(Note 2)
V
SD
I
S
V
GS
=0V,I
S
=3 A
–
–
–
–
1.2
3
V
A
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t
≤
10 sec.
3.
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
4.
Guaranteed by design, not subject to production
Wuxi NCE Power Co., Ltd
Page 2
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Pb Free Product
NCE2003
P-CH Electrical Characteristics (TA=25
℃
unless otherwise noted
Parameter
Symbol
Condition
Min Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics
(Note 3)
BV
DSS
I
DSS
V
GS
=0V I
D
=-250
μ
A
V
DS
=-20V,V
GS
=0V
V
GS
=±12V,V
DS
=0V
-20
–
V
–
–
–
–
-1
μ
A
nA
I
GSS
±100
Gate Threshold Voltage
V
GS(th)
R
DS(ON)
g
FS
V
DS
=V
GS
,I
D
=-250
μ
A
V
GS
=-4.5V, I
D
=-2.5 A
V
GS
=-2.5V, I
D
=-2A
V
DS
=-5V,I
D
=-2.5A
-0.4
-0.7
60
-1
75
100
–
V
m
Ω
m
Ω
S
–
–
–
Drain-Source On-State Resistance
81
Forward Transconductance
Dynamic Characteristics
(Note4)
Input Capacitance
9.5
C
lss
C
oss
C
rss
–
–
–
325
63
–
–
–
PF
PF
PF
V
DS
=-10V,V
GS
=0V,
Output Capacitance
F=1.0MHz
Reverse Transfer Capacitance
Switching Characteristics
(Note 4)
Turn-on Delay Time
37
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
–
–
–
11
5.5
22
8
–
–
–
–
–
–
–
nS
nS
nS
nS
nC
nC
nC
Turn-on Rise Time
V
DD
=-10V, R
L
=5
Ω
V
GS
=-4.5V,R
GEN
=3
Ω
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Q
g
Q
gs
Q
gd
3.2
0.6
0.9
V
DS
=-10V,I
D
=-2A,
Gate-Source Charge
V
GS
=-4.5V
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
Diode Forward Current
(Note 2)
V
SD
I
S
V
GS
=0V,I
S
=-3A
–
–
–
–
-1.2
-3
V
A
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t
≤
10 sec.
3.
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
4.
Guaranteed by design, not subject to production
Wuxi NCE Power Co., Ltd
Page 3
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Pb Free Product
NCE2003
N- Channel Typical Electrical and Thermal Characteristics (Curves)
Vdd
t
on
t
r
t
off
t
f
t
d(on)
V
OUT
V
IN
t
d(off)
Rl
Vin
90%
90%
D
Vout
Vgs
INVERTED
Rgen
10%
90%
G
10%
50%
S
50%
10%
PULSE WIDTH
Figure 1:Switching Test Circuit
Figure 2:Switching Waveforms
T
J
-Junction
T
e
mperature(
℃
)
T
J
-Junction
T
e
mperature(
℃
)
Figure 3 Power Dissipation
Figure 4 Drain Current
Vds Drain-Source Voltage (V)
I
D
– Drain Current (A)
Figure 5 Output Characteristics
Figure 6 Drain-Source On-Resistance
Wuxi NCE Power Co., Ltd
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NCE2003
Vgs Gate-Source Voltage (V)
T
J
-Junction
T
e
mperature(
℃
)
Figure 7 Transfer Characteristics
Figure 8 Drain-Source On-Resistance
Vgs Gate-Source Voltage (V)
Vds Drain-Source Voltage (V)
Figure 9 Rdson vs Vgs
Figure 10 Capacitance vs Vds
Qg Gate Charge (nC)
Vsd Source-Drain Voltage (V)
Figure 11 Gate Charge
Figure 12 Source- Drain Diode Forward
Wuxi NCE Power Co., Ltd
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NCE2003
Vds Drain-Source Voltage (V)
Figure 13 Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Co., Ltd
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NCE2003
P- Channel Typical Electrical and Thermal Characteristics (Curves)
t
on
t
off
t
f
t
r
t
d(on)
t
d(off)
90%
90%
V
OUT
INVERTED
10%
90%
10%
50%
V
IN
50%
10%
PULSE WIDTH
Figure 1:Switching Test Circuit
Figure 2:Switching Waveforms
T
J
-Junction
T
e
mperature(
℃
)
T
J
-Junction
T
e
mperature(
℃
)
Figure 3 Power Dissipation
Figure 4 Drain Current
-Vds Drain-Source Voltage (V)
-I
D
– Drain Current (A)
Figure 5 Output Characteristics
Figure 6 Drain-Source On-Resistance
Wuxi NCE Power Co., Ltd
Page 7
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NCE2003
-Vgs Gate-Source Voltage (V)
T
J
-Junction
T
e
mperature(
℃
)
Figure 7 Transfer Characteristics
Figure 8 Drain-Source On-Resistance
-Vgs Gate-Source Voltage (V)
-Vds Drain-Source Voltage (V)
Figure 9 Rdson vs Vgs
Figure 10 Capacitance vs Vds
Qg Gate Charge (nC)
-Vsd Source-Drain Voltage (V)
Figure 11 Gate Charge
Figure 12 Source- Drain Diode Forward
Wuxi NCE Power Co., Ltd
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-Vds Drain-Source Voltage (V)
Figure 13 Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Co., Ltd
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SOT23-6L Package Information
Wuxi NCE Power Co., Ltd
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Attention
■
Any and all NCE power products described or contained herein do not have specifications that can handle applications that
require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications
whose failure can be
reasonably expected to result in serious physical and/or material damage. Consult
with your NCE
power representative nearest you before using any NCE power products described or contained herein in
such applications.
■
NCE power
assumes no responsibility for equipment failures that result from using products at values
that exceed,
even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters)
listed in products specifications of any and all NCE power products described or contained herein.
■
Specifications of any and all NCE power products described or contained herein stipulate the performance, characteristics,
and functions of the described products in the independent state, and are not guarantees of the performance, characteristics,
and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states
that cannot
be evaluated in an independent device, the customer should always evaluate and test
devices mounted
in the
customer’s products or equipment.
■
NCE power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail
with some probability. It is possible that these probabilistic failures could
give rise to
accidents or events that could
endanger human lives, that could give rise to smoke or fire, or that could
cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or
events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe
design, redundant design, and structural design.
■
In the event that any or all NCE power products(including technical data, services) described or contained herein are
controlled under any of applicable local export control laws and regulations, such products must not be exported without
obtaining the export license from the authorities concerned in accordance with the above law.
■
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including
photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission
of NCE power Semiconductor CO.,LTD.
■
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume
production. NCE power believes information herein is accurate and reliable, but no guarantees are made or implied
regarding its use or any infringements of intellectual property rights or other rights of third parties.
■
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the “Delivery Specification” for the NCE power
product that you intend to use.
■
This catalog provides information as of Sep.2010. Specifications and information herein are subject to change without notice.
Wuxi NCE Power Co., Ltd
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