Wuxi-NCE-Power-Semiconductor-NCE20TH60BP
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NCE20TH60BP
600
V
, 20A, Trench FS II Fast IGBT
General Description:
Using NCE’s proprietary trench design and advanced FS (Field Stop) second
generation technology, the 600V Trench FSII IGBT offers superior conduction and
switching performances, and easy parallel operation;
Features
Trench FSII Technology offering
⚫
Very low V
CE
sat
（
）
⚫
High speed switching
⚫
Positive temperature coefficient in V
CE
sat
（
）
⚫
Very tight parameter distribution
⚫
High ruggedness, temperature stable behavior
Schematic diagram
Application
⚫
Air Condition
⚫
Inverters
⚫
Motor drives
Package Marking and Ordering Information
Device
Device Package
Device Marking
NCE20TH60BP
TO-3P
NCE20TH60BP
TO-3P
Absolute Maximum Ratings (T
C
=25
℃
unless otherwise noted)
Symbol
Parameter
Value
Units
V
V
CES
Collector-Emitter Voltage
600
V
GES
Gate- Emitter Voltage
±30
V
Collector Current
40
A
I
C
Collector Current @T
C
= 100 °C
20
A
I
Cplus
–
Pulsed Collector Current
，
t
p
limited by T
jmax
turn off safe operating area
，
VCE=600V
，
Tj=150
℃
Diode Continuous Forward Current @T
C
= 100 °C
Diode Maximum Forward Current
60
A
60
10
A
I
F
A
I
FM
30
A
Power Dissipation @ T
C
= 25°C
135
W
W
℃
℃
P
D
Power Dissipation @T
C
= 100 °C
54
T
J
,T
stg
T
L
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
-55 to +150
260
Short circuit withstand time V
GE
=15.0V, V
C
C
≤
400V,
Allowed number of short circuits<1000Time between
short circuits:
≥
1.0s,T
j
≤
150
℃
t
sc
3
us
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PbFreeProduct
NCE20TH60BP
Thermal Characteristic
Symbol
Parameter
Value
0.93
1.92
62
Units
℃
/W
℃
/W
℃
/W
R
θJC
R
θJC
R
θJA
Thermal Resistance, Junction to case for IGBT
Thermal Resistance, Junction to case for Diode
Thermal Resistance, Junction to Ambient
Electrical Characteristics (T
C
=25
℃
unless otherwise noted)
Rating
Symbol
Parameter
Test Conditions
Units
Min.
Typ.
Max.
STATIC Characteristics
V
(BR)CES
I
CES
I
GES(F)
I
GES(R)
Collector-EmitterBreakdown Voltage
Collector-Emitter Leakage Current
Gate to Emitter Forward Leakage
Gate to Source Reverse Leakage
V
GE
=0V,I
CE
=1mA
V
GE
=0V,V
CE
=600V
V
GE
=+30V,V
CE
=0V
V
GE
=-30V,V
CE
=0V
600
—
—
—
—
4
V
uA
nA
nA
V
—
—
100
100
1.9
—
—
—
Tj
=
25
℃
—
1.7
1.9
—
I
C
=20A
V
CE(sat)
V
GE(th)
Collector-Emitter Saturation Voltage
Gate Threshold Voltage
V
GE
=15V
Tj
=
100
℃
—
V
I
C
=1mA,V
CE
=V
GE
4.0
6.0
V
Dynamic Characteristics
C
ies
C
oes
C
res
Q
g
Input Capacitance
—
—
—
—
—
—
2580
48
—
—
—
—
—
—
V
CE
=25V,V
GE
=0V,
f=1MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Total Gate Charge
26
97
nC
nC
nC
V
CC
=480V, I
C
=20A
V
GE
=15V
Q
ge
Q
gc
Gate to Emitter Charge
Gate to Collector Charge
17
37
Short circuit collector current Max.1000
short circuits Time between short circuits:
≥
1.0s
V
GE
=15V,V
CC
≤
400V,
I
C(SC)
—
130
—
A
t
SC
≤
3us,Tj
≤
150
℃
Switching Characteristics
t
d(ON)
Turn-on Delay Time
t
r
t
d(OFF)
t
f
—
—
—
—
—
—
—
18
16
—
—
—
—
—
—
—
Rise Time
ns
Turn-Off Delay Time
Fall Time
164
15
V
CE
=400V,I
C
=10A
V
GE
=0/15V, R
g
=25
Ω
Inductive Load
E
on
E
off
E
ts
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
0.43
0.17
0.60
mJ
Electrical Characteristics of the Diode(T
C
= 25
℃
unless otherwise specified)
：
Rating
Symbol
Parameter
Test Conditions
Units
Min.
Typ.
1.45
182
5.3
Max.
1.7
—
V
FM
T
rr
Diode Forward Voltage
I
F
=10A
—
—
—
—
V
ns
A
Reverse Recovery Time
Vcc=400V, I
F
=10A,
di/dt=200A/uS
I
RRM
Q
rr
Diode Peak Reverse Recovery Current
Reverse Recovery Charge
—
0.5
—
uC
Pulse width t
tp
≤380µs,δ≤2%
Wuxi NCE Power Co., Ltd
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NCE20TH60BP
Test Circuit
1) Gate Charge Test Circuit
2) Switch Time Test Circuit
Switching characteristics
1) definition of switching times
2) definition of switching losses
3) Definition of diode switching characteristics
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PbFreeProduct
NCE20TH60BP
Typical Electrical and Thermal Characteristics
Figure 1 Output Characteristics
Figure 2 Transfer Characteristics
60A
VGE = 19V
60A
50A
40A
30A
20A
10A
0A
V
CE
= 20V
17V
50A
15V
13V
40A
11V
T
J
= 150
℃
25
℃
30A
9V
7V
20A
10A
0A
1V
2V
3V
4V
0V
V
CE
, Collector-Emitter Voltage
6V
7V
8V
9V
5V
10V
11V
V
GE
, Gate-Emitter Voltage
Figure 4 Saturation Voltage vs. VGE
Figure 3 V
CEsat
vs. Case Temperature
Common Emitter
Tc = 25
℃
V
GE
= 15V
4.0V
3.5V
3.0V
2.5V
2.0V
1.5V
1.0V
0.5V
0V
28V
24V
20V
I
C
= 40A
16V
40A
I
C
= 20A
I
C
= 10A
12V
8V
IC=10A
20A
4V
0V
0V
20V
0
℃
25
℃
50
℃
75
℃
100
℃
125
℃
150
℃
4V
8V
12V
16V
T
J
，
Junction Temperature
V
GE
, Gate-Emitter Voltage
Figure 5 Capacitance Characteristics
Figure 6 Gate charge waveform
16
10000
1000
100
10
C
iss
14
12
10
8
V
CC
=480V
C
oss
6
4
C
rss
2
1
0
0
10
20
30
40
0
20
40
60
80
100
Q
G
,
T
o
tal Gate Charge (nC)
V
CE
, Collector-Emitter Voltage (V)
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PbFreeProduct
NCE20TH60BP
Typical Electrical and Thermal Characteristics
（
continued
）
Figure 8 V
F
vs. temperature
Figure 7 Forward Characteristics
40A
Tj=25
℃
Tj=125
℃
I
F
= 20A
1.5V
1.0V
35A
30A
25A
20A
15A
10A
5A
I
F
= 10A
IF = 5A
0.5V
0V
0A
0
℃
50
℃
100
℃
150
℃
0.5V
1.0V
1.5V
2.0V
0V
V
F
, Forward Voltage Voltage
T
J
，
Junction Temperature
Figure 10 Gate-emitter Threshold Voltage as a
Figure 9 Forward Bias Safe Operating
Function of Junction Temperature
5
100
I
C
=1mA
tp=1us
4.5
4
10
1
3.5
3
0.1
25
50
75
100
125
150
175
1
10
100
1000
T
J
, Junction
T
emperature (°C
)
V
CE
, Collector-Emitter Voltage (V)
Figure 12 Typical Switching Times as a
Function of Junction Temperature
Figure 11 Typical Switching Times as a
Function of Gate Resistor
0.7
1.0
E
off
E
on
E
ts
E
off
E
on
E
ts
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.8
0.6
0.4
0.2
0.0
25
50
75
100
125
150
175
0
10
20
30
40
50
T
J
, Junction
T
emperature (°C
)
R
G
, Gate Resistor (
Ω
)
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NCE20TH60BP
Typical Electrical and Thermal Characteristics
（
continued
）
Figure 13 Power Dissipation as a
Figure 14 Current Derating
Function of Case Temperature
35
30
25
20
15
10
5
150
120
90
60
30
0
0
25
50
75
100
125
150
175
25
50
75
100
125
150
T
C
, Case
T
e
mperature (°C
)
T
C
, Collector-Emitter Case
T
e
mperature (°C
)
Figure 15
Typical Collector-emitter Saturation
Figure 16 Transient Thermal Impedance
Voltage as a function of Collector Current
3.5
1.0
K/W
0.5
3
2.5
2
0.2
0.1
0.1
K/W
0.05
Pdm
t1
0.02
0.01
1.5
1
t2
Duty factor D=t1/t2
Peak Tj=Pdm*Rthjc*Tc
Single pluse
0.01
K/W
10
20
30
40
50
60
1us 10us
100us
1ms
10ms 100ms
t
P
，
Pluse width
I
C
, Collector Current (A)
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PbFreeProduct
NCE20TH60BP
TO-3P-3L Package Information
Dimensions In Millimeters
Symbol
Dimensions In Inches
Min.
15.50
19.70
20.10
Max.
15.70
20.10
20.50
Min.
0.61
0.78
0.79
Max.
0.62
0.79
0.81
A
B
C
D
E
2.00
3.00
0.08
0.12
0.21
0.43
F
5.45
G
H
I
10.90
10.80
8.80
6.85
12.75
1.49
13.70
0.59
1.32
4.70
11.00
9.00
7.15
13.05
1.51
14.00
0.61
1.48
4.90
0.43
0.35
0.27
0.50
0.06
0.54
0.02
0.05
0.19
0.43
0.35
0.28
0.51
0.06
0.55
0.02
0.06
0.19
J
K
L
M
N
O
P
S
4°
0.16°
0.14
0.06
0.28
T1
T2
T3
3.50
1.50
7.00
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PbFreeProduct
NCE20TH60BP
Attention:
■
Any and all NCE power products described or contained herein do not have specifications that can handle applications that
require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications
whose failure can be
reasonably expected to result in serious physical and/or material damage. Consult
with your NCE
power representative nearest you before using any NCE power products described or contained herein in
such applications.
■
NCE power
assumes no responsibility for equipment failures that result from using products at values
that exceed,
even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters)
listed in products specifications of any and all NCE power products described or contained herein.
■
Specifications of any and all NCE power products described or contained herein stipulate the performance, characteristics,
and functions of the described products in the independent state, and are not guarantees of the performance, characteristics,
and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states
that cannot
be evaluated in an independent device, the customer should always evaluate and test
devices mounted
in the
customer’s products or equipment.
■
NCE power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail
with some probability. It is possible that these probabilistic failures could
give rise to
accidents or events that could
endanger human lives, that could give rise to smoke or fire, or that could
cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or
events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe
design, redundant design, and structural design.
■
In the event that any or all NCE power products(including technical data, services) described or contained herein are
controlled under any of applicable local export control laws and regulations, such products must not be exported without
obtaining the export license from the authorities concerned in accordance with the above law.
■
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including
photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission
of NCE power Semiconductor CO.,LTD.
■
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume
production. NCE power believes information herein is accurate and reliable, but no guarantees are made or implied
regarding its use or any infringements of intellectual property rights or other rights of third parties.
■
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the “Delivery Specification” for the NCE power
product that you intend to use.
■
This catalog provides information as of Sep.2010. Specifications and information herein are subject to change without notice.
Wuxi NCE Power Co., Ltd
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