Wuxi-NCE-Power-Semiconductor-NCE3013J
| Part # | Wuxi-NCE-Power-Semiconductor-NCE3013J |
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NCE3013J
NCE N-Channel
Enhancement Mode Power MOSFET
Description
The NCE3013J uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate charge. It
can be used in a wide variety of applications.
General Features
●
V
DS
=30
V
,
I
D
=13A
R
DS(ON)
<12m
Ω
@ V
GS
=10V
R
DS(ON)
<20m
Ω
@ V
GS
=4.5V
Schematic Diagram
●
High density cell design for ultra low Rdson
●
Fully characterized Avalanche voltage and current
●
Good stability and uniformity with high E
AS
●
Excellent package for good heat dissipation
●
Special process technology for high ESD capability
Application
●
●
●
Power switching application
DFN2X2-6L bottom view
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
3013J
NCE3013J
DFN2X2-6L
Ø180mm
12mm
4000 units
Absolute Maximum Ratings (T
C
=25
℃
unless otherwise noted)
Parameter
Symbol
Limit
30
Unit
Drain-Source Voltage
V
V
V
DS
V
GS
Gate-Source Voltage
±20
Drain Current-Continuous
Drain Current-Continuous(T
C
=100
℃
)
Pulsed Drain Current
(Note 1)
Maximum Power Dissipation
Single pulse avalanche energy
(Note 5)
13
9.2
52
3
A
I
D
I
D
(100
℃
)
I
DM
A
A
W
mJ
V
P
D
E
AS
72
V
DS
Spike
(Note 6)
10
μ
s
36
Operating Junction and Storage Temperature Range
-55
T
o
1
50
42
℃
T
J
,T
STG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient
(Note 2)
R
θ
JA
℃
/W
Electrical Characteristics (T
C
=25
℃
unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics
(Note 3)
BV
DSS
I
DSS
V
GS
=0V I
D
=250
μ
A
V
DS
=30V,V
GS
=0V
V
GS
=±20V,V
DS
=0V
30
–
–
–
–
–
1
V
μ
A
nA
I
GSS
–
±100
Wuxi NCE Power Co., Ltd
Page 1
V4.0
NCE3013J
Parameter
Symbol
Condition
V
DS
=V
GS
,I
D
=250
μ
A
V
GS
=10V, I
D
=13A
V
GS
=4.5V, I
D
=13A
V
DS
=5V,I
D
=13A
Min Typ
Max
2.5
12
Unit
Gate Threshold Voltage
V
GS(th)
1.0
–
1.6
9.5
15
–
V
m
Ω
m
Ω
S
Drain-Source On-State Resistance
R
DS(ON)
g
FS
–
20
Forward Transconductance
Dynamic Characteristics
(Note4)
Input Capacitance
26
–
C
lss
C
oss
C
rss
–
–
–
1066
160
–
–
–
PF
PF
PF
V
DS
=15V,V
GS
=0V,
Output Capacitance
F=1.0MHz
Reverse Transfer Capacitance
Switching Characteristics
(Note 4)
Turn-on Delay Time
137
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
–
–
–
5
12
19
6
–
–
–
–
–
–
–
nS
nS
nS
nS
nC
nC
nC
Turn-on Rise Time
V
DD
=15V, R
L
=1.2
Ω
V
GS
=10V,R
G
=3
Ω
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Q
g
Q
gs
Q
gd
24
3.5
6
V
DS
=15V,I
D
=13A,
GS
=10V
Gate-Source Charge
V
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
Diode Forward Current
(Note 2)
Reverse Recovery Time
V
SD
I
S
V
GS
=0V,I
S
=13A
–
–
–
–
1.2
13
–
V
A
–
t
rr
T
J
= 25°C, I
F
=13A
di/dt = 100A/
μ
s
(Note3)
29
50
nS
nC
Reverse Recovery Charge
Forward Turn-On Time
Qrr
t
on
–
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t
≤
10 sec.
3.
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
4.
Guaranteed by design, not subject to production
5.
EAS condition:Tj=25
℃
,V
DD
=15V,V
G
=10V,L=0.5mH,Rg=25
Ω
6. The spike duty cycle 5% max, limited by junction temperature T
J
(MAX)=125
°
C
Wuxi NCE Power Co., Ltd
Page 2
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NCE3013J
Test circuit
1
）
E
AS
test Circuits
2
）
Gate charge test Circuit:
3
）
Switch Time Test Circuit
：
Wuxi NCE Power Co., Ltd
Page 3
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NCE3013J
Typical Electrical and Thermal Characteristics (Curves)
Vds Drain-Source Voltage (V)
T
J
-Junction
T
e
mperature(
℃
)
Figure 1 Output Characteristics
Figure 4 Rdson-Junction Temperature
Vgs Gate-Source Voltage (V)
Qg Gate Charge (nC)
Figure 2 Transfer Characteristics
Figure 5 Gate Charge
I
D
– Drain Current (A)
Vsd Source-Drain Voltage (V)
Figure 3 Rdson-
Drain Current
Figure 6 Source- Drain Diode Forward
Wuxi NCE Power Co., Ltd
Page 4
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NCE3013J
Vds Drain-Source Voltage (V)
T
C
-Case
T
e
mperature(
℃
)
Figure 7 Capacitance vs Vds
Figure 9 Power De-rating
Vds Drain-Source Voltage (V)
T
C
-Case
T
e
mperature(
℃
)
Figure 8 Safe Operation Area
Figure 10 I
D
Current De-rating
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Co., Ltd
Page 5
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NCE3013J
Attention:
■
Any and all NCE Power products described or contained herein do not have specifications that can handle applications that
require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose
failure can be
reasonably expected to result in serious physical and/or material damage. Consult with
your NCE
Power representative nearest you before using any NCE power products described or contained herein in such
applications.
■
■
NCE Power assumes no responsibility for equipment failures that result from using products at values that exceed, even
momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products
specifications of any and all NCE power products described or contained herein.
Specifications of any and all NCE Power products described or contained herein stipulate the performance, characteristics,
and functions of the described products in the independent state, and are not guarantees of the performance, characteristics,
and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states
that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the
customer’s products or equipment.
■
NCE Power Co.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail
with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger
human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all NCE power products(including technical data, services) described or contained herein are
controlled under any of applicable local export control laws and regulations, such products must not be exported without
obtaining the export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including
photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission
of NCE Power Co.,LTD.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume
production. NCE power believes information herein is accurate and reliable, but no guarantees are made or implied regarding
its use or any infringements of intellectual property rights or other rights of third parties.
■
■
■
■
■
Any and all information described or contained herein are subject to change without notice due to product/technology
improvement, etc. When designing equipment, refer to the “Delivery Specification” for the NCE power product that you intend
to use.
This catalog provides information as of Sep.2010. Specifications and information herein are subject to change without notice.
Wuxi NCE Power Co., Ltd
Page 8
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