Wuxi-NCE-Power-Semiconductor-NCE40TD120VT

Part #Wuxi-NCE-Power-Semiconductor-NCE40TD120VT
Download 
Wuxi-NCE-Power-Semiconductor-NCE40TD120VT
PbFreeProduct  
NCE40TD120VT  
1200
V
,
4
0A, Trench FS II Fast IGBT  
General Description:  
Using NCE’s proprietary trench design and advanced FS (Field Stop) second  
generation technology, the 1200V Trench FSII IGBT offers superior conduction and  
switching performances, and easy parallel operation;  
Features  
⚫
Trench FSII Technology Offering  
⚫
Very low V

CE(sat)  

⚫
High speed switching  
⚫
Positive temperature coefficient in V

CE(sat)  

⚫
Very tight parameter distribution  
⚫
High ruggedness, temperature stable behavior  
Schematic diagram  
Application  
⚫
PV power  
⚫
Three-level Solar String Inverter  
⚫
UPS  
Package Marking and Ordering Information  
Device  
Device Package  
Device Marking  
NCE40TD120VT  
TO-247  
NCE40TD120VT  
TO-247  
Absolute Maximum Ratings (T

C

=25°C unless otherwise noted)  
Symbol  
V

CES  

Parameter  
Value  
1200  
±30  
80  
Units  
Collector-Emitter Voltage  
V
V
V

GES  

Gate- Emitter Voltage  
Collector Current  
A
I

C  

Collector Current @T

C

= 100 °C  
40  
A
I

Cpuls  

–
Pulsed Collector Current
,
t

p

limited by T

jmax  

turn off safe operating area
,
V

CE

=1200V
,
T

j

=175°C  
Diode Continuous Forward Current @T

C

= 100 °C  
Diode Maximum Forward Current  
160  
160  
40  
A
A
I

F  

A
I

FM  

160  
468  
234  
A
Power Dissipation @ T

C

= 25°C  
W
W
P

D  

Power Dissipation @T

C

= 100 °C  
T

J

,T

stg  

T

L  

Operating Junction and Storage Temperature Range  
Maximum Temperature for Soldering  
-55 to +175  
260  
°C  
°C  
Wuxi NCE Power Co., Ltd  
Page  
V6.2  
1

PbFreeProduct  
NCE40TD120VT  
Thermal Characteristic  
Symbol  
Parameter  
Value  
Units  
°C/W  
°C/W  
°C/W  
R

θJC  

R

θJC  

R

θJA  

Thermal Resistance, Junction to case for IGBT  
Thermal Resistance, Junction to case for Diode  
Thermal Resistance, Junction to Ambient  
0.32  
0.61  
40  
Electrical Characteristics (T

C

=25°C unless otherwise noted)  
Value  
Symbol  
Parameter  
Conditions  
Units  
Min.  
Typ.  
Max.  
Static Characteristics  
V

(BR)CES  

I

CES  

I

GES(F)  

I

GES(R)  

Collector-Emitter Breakdown Voltage  
Collector-Emitter Leakage Current  
Gate to Emitter Forward Leakage  
Gate to Emitter Reverse Leakage  
V

GE

=0V,I

CE

=1mA  
V

GE

=0V,V

CE

=1200V  
V

GE

=+30V,V

CE

=0V  
V

GE

=-30V,V

CE

=0V  
1200  
—  
—  
—  
—  
V
uA  
nA  
nA  
V
200  
200  
200  
1.95  
—  
—  
—  
—  
—  
Tj
=
25°C  
—  
1.70  
1.95  
—  
I

C

=40A  
V

CE(sat)  

V

GE(th)  

Collector-Emitter Saturation Voltage  
Gate Threshold Voltage  
V

GE

=15V  
Tj
=
175°C  
—  
V
I

C

=1mA,V

CE

=V

GE  

4.5  
6.0  
V
Dynamic Characteristics  
C

ies  

C

oes  

C

res  

Q

g  

Input Capacitance  
—  
—  
—  
—  
—  
—  
5590  
177  
134  
298  
52  
—  
—  
—  
—  
—  
—  
V

CE

=30V,V

GE

=0V,  
f=1MHz  
Output Capacitance  
pF  
nC  
Reverse Transfer Capacitance  
Total Gate Charge  
V

CC

=960V, I

C

=40A,  
V

GE

=15V  
Q

ge  

Q

gc  

Gate to Emitter Charge  
Gate to Collector Charge  
169  
Switching Characteristics  
t

d(ON)

Turn-on Delay Time  
t

r  

t

d(OFF)  

t

f  

—  
—  
—  
—  
—  
—  
—  
—  
—  
—  
19  
17  
—  
—  
—  
—  
—  
—  
—  
—  
—  
—  
Rise Time  
ns  
Turn-Off Delay Time  
Fall Time  
170  
18  
V

CE

=600V,I

C

=40A,  
V

GE

=0/15V, R

g

=8
Ω  
Inductive Load  
E

on  

E

off  

E

ts  

Turn-On Switching Loss  
Turn-Off Switching Loss  
Total Switching Loss  
Turn-On Switching Loss  
Turn-Off Switching Loss  
Total Switching Loss  
2.2  
1.3  
3.5  
2.8  
1.6  
4.4  
mJ  
mJ  
E

on  

E

off  

E

ts  

V

CE

=600V,I

C

=40A,  
V

GE

=0/15V, R

g

=8
Ω  
Tj
=
175°C  
Electrical Characteristics of the Diode (T

C

= 25°C unless otherwise specified)  
Value  
Symbol  
Parameter  
Conditions  
Units  
Min.  
Typ.  
2.2  
Max.  
3.0  
—  
V

FM  

T

rr  

Diode Forward Voltage  
I

F

=40A  
—  
—  
—  
—  
V
ns  
A
Reverse Recovery Time  
180  
10  
I

F

=20A,  
I

RRM  

Q

rr  

Diode Peak Reverse Recovery Current  
Reverse Recovery Charge  
—  
di/dt=500A/us  
2.4  
—  
uC  
Wuxi NCE Power Co., Ltd  
Page  
V6.2  
2

PbFreeProduct  
NCE40TD120VT  
Test Circuit  
1) Gate Charge Test Circuit  
2) Switch Time Test Circuit  
Switching characteristics  
1) Definition of switching times  
2) Definition of switching losses  
3) Definition of diode switching characteristics  
Wuxi NCE Power Co., Ltd  
Page  
V6.2  
3

PbFreeProduct  
NCE40TD120VT  
Typical Electrical and Thermal Characteristics  
Figure 1 Output Characteristics  
Figure 2 Transfer Characteristics  
200  
160  
120  
80  
200  
V

CE

=20V  
V

GE

=17V  
15V  
160  
13V  
11V  
9V  
25°C  
150°C  
120  
7V  
80  
40  
0
40  
0
0
1
2
3
4
5
3
6
9
12  
15  
V

CE

, Collector-Emitter Voltage (V)  
V

GE

, Gate-Emitter Voltage (V)  
Figure 3 V

CE(sat)

vs. Case Temperature  
Figure 4 Saturation Voltage vs. V

GE  

32  
28  
24  
20  
16  
12  
8
3.5  
3
V

GE

=15V  
I

C

=120A  
2.5  
2
80A  
I

C

=40A  
20A  
40A  
1.5  
1
I

C

=20A  
0.5  
0
4
0
25  
50  
75  
100  
125  
150  
175  
4
8
12  
16  
20  
24  
T

J

, Junction
T
emperature (°C)  
V

GE

, Gate-Emitter Voltage (V)  
Figure 5 Capacitance Characteristics  
Figure 6 Gate Charge Wave Form  
15  
100000  
10000  
1000  
100  
12  
9
C

ies  

V

CC

=960V  
C

oes  

6
C

res  

3
10  
0
1
0
50  
100  
150  
200  
250  
300  
0
20  
40  
60  
80  
100  
V

CE

, Collector-Emitter Voltage (V)  
Q

G

,
T
o
tal Gate Charge (nC)  
Wuxi NCE Power Co., Ltd  
Page  
V6.2  
4

PbFreeProduct  
NCE40TD120VT  
Typical Electrical and Thermal Characteristics  
Figure 7 Forward Characteristics  
Figure 8 V

F

vs. Temperature  
3.5  
3
150  
120  
I

F

=80A  
2.5  
2
150°C  
90  
40A  
20A  
25°C  
60  
1.5  
1
30  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
25  
50  
75  
100  
125  
150  
175  
V

F

, Forward Voltage (V)  
T

J

,
Junction
T
emperature (°C
 
)  
Figure 9 Switching Energy vs. Temperature  
5
Figure 10 Forward Bias Safe Operating Area  
1000  
Eoff  
Eon  
Ets  
4
100  
10  
1
not for linear use  
3
2
1
I

C

=40A  
R

G

=10
Ω  
0.1  
0
1
10  
100  
1000  
10000  
25  
50  
75  
100  
125  
150  
175  
V

CE

, Collector-Emitter Voltage (V)  
T

J

, Junction
T
emperature (°C
 
)  
Figure 11 Gate-Emitter Threshold Voltage as a  
Figure 12 Typical Collector-Emitter Saturation  
Function of Junction Temperature  
Voltage as a function of Collector Current  
6
3
V

GE

=15V  
I

C

=1mA  
5.5  
2.5  
2
5
4.5  
4
1.5  
1
3.5  
3
0.5  
20  
40  
60  
80  
100  
120  
25  
50  
75  
100  
125  
150  
175  
T

J

, Junction
T
emperature (°C)  
I

C

, Collector Current (A)  
Wuxi NCE Power Co., Ltd  
Page  
V6.2  
5

PbFreeProduct  
NCE40TD120VT  
Typical Electrical and Thermal Characteristics  
Figure 13 Switching Loss vs. R

G  

Figure 14 Switching Loss vs. Collector Current  
8
6
Eoff  
Eon  
Ets  
Eoff  
Eon  
Ets  
7
6
5
4
3
2
1
0
5
4
3
2
1
I

C

=40A  
V

G

=15V  
R

G

=10
Ω  
V

G

=15V  
0
10  
20  
30  
40  
50  
20  
30  
40  
50  
60  
70  
80  
R

G

,
Gate Resistor
(
Ω
)  
I

C

, Collector Current (A)  
Figure 15 Switching Loss vs. Collector Current  
Figure 16 P

tot

vs. Case Temperature  
10  
500  
400  
300  
200  
100  
0
Eoff  
9
Eon  
Ets  
8
7
6
5
4
3
2
R

G

=10
Ω  
T

J

=175
°C  
1
0
20  
30  
40  
50  
60  
70  
80  
25  
50  
75  
100  
125  
150  
175  
T

C

, Case
T
e
mperature (°C)  
I

C

, Collector Current (A)  
Figure 17 V

CES

vs. Temperature  
Figure 18 I

C

vs. Temperature  
1.2  
1.1  
1
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
I

C

=1mA  
0.9  
0.8  
0.7  
0.6  
-50  
0
50  
100  
150  
200  
25  
50  
75  
100  
125  
150  
175  
T

C

, Case
T
e
mperature (°C)  
T

C

, Case
T
e
mperature (°C)  
Wuxi NCE Power Co., Ltd  
Page  
V6.2  
6

PbFreeProduct  
NCE40TD120VT  
Typical Electrical and Thermal Characteristics  
Figure 19 Switching Time vs. I

C  

Figure 20 Switching Time vs. R

G  

1000  
1000  
100  
10  
100  
10  
t

d(ON)  

t

r  

t

d(OFF)  

t

f  

t

d(ON)  

t

r  

t

d(OFF)  

t

f  

V

G

=15V  
I

C

=40A  
V

G

=15V  
R

G

=8
Ω  
1
1
0
10  
20  
30  
40  
50  
60  
70  
0
20  
40  
60  
80  
100  
I

C

, Collector Current (A)  
R

G

,
Gate Resistor
(
Ω
)  
Figure 21 V

CE(sat)

vs. Collector Current  
Figure 22 Switching Loss vs. V

CE  

4.5  
4
3.5  
3
V

G

=15V  
T

J

=175
°C  
3.5  
3
Eon  
T

J

=25
°C  
2.5  
2
2.5  
2
1.5  
1
Eoff  
T

J

=-40
°C  
V

G

=15V  
I

C

=40A  
R

G

=10
Ω  
T

J

=175
°C  
1.5  
1
0.5  
0
200  
400  
600  
800  
1000  
20  
40  
60  
80  
100  
120  
I

C

, Collector Current (A)  
V

CE

,
Collector Emitter Voltage
(V)  
Figure 23 Switching Time vs. IC  
Figure 24 Switching Time vs. R

G  

1000  
100  
10  
1000  
100  
10  
t

d(ON)  

t

d(ON)  

V

G

=15V  
R

G

=8
Ω  
T

J

=175
°C  
V

G

=15V  
I

C

=40A  
T

J

=175
°C  
t

r  

t

d(OFF)  

t

f  

t

r  

t

d(OFF)  

t

f  

1
1
20  
30  
40  
50  
60  
70  
80  
10  
20  
30  
40  
50  
60  
I

C

, Collector Current (A)  
R

G

,
Gate Resistor
(
Ω
)  
Wuxi NCE Power Co., Ltd  
Page  
V6.2  
7

PbFreeProduct  
NCE40TD120VT  
TO-247-P Package Information  
Dimensions In Millimeters  
Symbol  
Dimensions In Inches  
Min.  
4.90  
2.31  
1.90  
1.16  
1.96  
2.96  
–
Max.  
5.10  
2.51  
2.10  
1.26  
2.06  
3.06  
2.25  
3.25  
0.66  
21.10  
16.85  
1.35  
15.90  
13.50  
Min.  
0.193  
0.091  
0.075  
0.046  
0.077  
0.117  
–
Max.  
0.201  
0.099  
0.083  
0.050  
0.081  
0.120  
0.089  
0.128  
0.026  
0.831  
0.663  
0.053  
0.626  
0.531  
A
A1  
A2  
b
b2  
b4  
b6  
b7  
C
–
–
0.59  
20.90  
16.25  
1.05  
15.70  
13.10  
0.023  
0.823  
0.640  
0.041  
0.618  
0.516  
D
D1  
D2  
E
E1  
e
5.436 BSC  
0.214 BSC  
L
19.80  
–
20.10  
4.30  
3.60  
7.40  
6.25  
10.20  
0.780  
–
0.791  
0.169  
0.142  
0.291  
0.246  
0.402  
L1  
P
3.40  
7.00  
6.05  
9.80  
0.134  
0.276  
0.238  
0.386  
P1  
S
T
Wuxi NCE Power Co., Ltd  
Page  
V6.2  
8

PbFreeProduct  
NCE40TD120VT  
TO-247-B Package Information  
Dimensions In Millimeters  
Symbol  
Dimensions In Inches  
Min.  
4.83  
2.29  
1.91  
1.07  
1.91  
2.87  
0.55  
20.80  
16.25  
0.95  
15.75  
13.10  
3.68  
1.00  
12.38  
Max.  
Min.  
Max.  
0.205  
0.100  
0.085  
0.052  
0.095  
0.133  
0.027  
0.831  
0.695  
0.049  
0.635  
0.557  
0.201  
0.075  
0.529  
A
A1  
A2  
b
5.21  
0.190  
0.090  
0.075  
0.042  
0.075  
0.113  
0.022  
0.819  
0.640  
0.037  
0.620  
0.516  
0.145  
0.039  
0.487  
2.54  
2.16  
1.33  
b1  
b3  
c
2.41  
3.38  
0.68  
D
21.10  
17.65  
1.25  
D1  
D2  
E
16.13  
14.15  
5.10  
E1  
E2  
E3  
E4  
e
1.90  
13.43  
5.44 BSC  
3.00  
0.214 BSC  
0.118  
N
L
19.81  
4.10  
3.51  
5.49  
6.04  
20.32  
4.40  
3.65  
6.00  
6.30  
0.780  
0.161  
0.138  
0.216  
0.238  
0.800  
0.173  
0.144  
0.236  
0.248  
L1  
P
Q
S
Wuxi NCE Power Co., Ltd  
Page  
V6.2  
9

PbFreeProduct  
NCE40TD120VT  
TO-247-d Package Information  
Dimensions In Millimeters  
Symbol  
Dimensions In Inches  
Min.  
4.80  
2.80  
2.20  
1.05  
2.80  
1.80  
0.50  
5.25  
15.60  
12.30  
6.00  
20.50  
19.00  
3.00  
5.70  
3.30  
2.30  
Max.  
5.20  
3.20  
2.60  
1.35  
3.20  
2.20  
0.70  
5.65  
16.00  
12.70  
6.40  
21.50  
21.00  
5.00  
6.10  
3.50  
2.70  
Min.  
Max.  
0.205  
0.126  
0.102  
0.053  
0.126  
0.087  
0.028  
0.222  
0.630  
0.500  
0.252  
0.846  
0.827  
0.197  
0.240  
0.138  
0.106  
A
A1  
A2  
b
0.189  
0.110  
0.087  
0.041  
0.110  
0.071  
0.020  
0.207  
0.614  
0.484  
0.236  
0.807  
0.748  
0.118  
0.224  
0.130  
0.091  
b1  
b2  
c
e
E
E1  
E2  
H
H1  
H2  
G
ФP  
ФQ  
Wuxi NCE Power Co., Ltd  
Page  
V6.2  
10  

PbFreeProduct  
NCE40TD120VT  
Attention:  
■
Any and all NCE power products described or contained herein do not have specifications that can handle applications that  
require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications  
whose failure can be
 
reasonably expected to result in serious physical and/or material damage. Consult  
with your NCE
 
power representative nearest you before using any NCE power products described or contained herein in  
such applications.  
■
NCE power
 
assumes no responsibility for equipment failures that result from using products at values  
that exceed,
 
even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters)  
listed in products specifications of any and all NCE power products described or contained herein.  
■
Specifications of any and all NCE power products described or contained herein stipulate the performance, characteristics,  
and functions of the described products in the independent state, and are not guarantees of the performance, characteristics,  
and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states  
that cannot
 
be evaluated in an independent device, the customer should always evaluate and test  
devices mounted
 
in the
 
customer’s products or equipment.  
■
NCE power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all  
semiconductor products fail
 
with some probability. It is possible that these probabilistic failures could  
give rise to
 
accidents or events that could
 
endanger human lives, that could give rise to smoke or fire, or that could  
cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or  
events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe  
design, redundant design, and structural design.  
■
In the event that any or all NCE power products(including technical data, services) described or contained herein are  
controlled under any of applicable local export control laws and regulations, such products must not be exported without  
obtaining the export license from the authorities concerned in accordance with the above law.  
■
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including  
photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission  
of NCE power Semiconductor CO.,LTD.  
■
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume  
production. NCE power believes information herein is accurate and reliable, but no guarantees are made or implied  
regarding its use or any infringements of intellectual property rights or other rights of third parties.  
■
Any and all information described or contained herein are subject to change without notice due to  
product/technology improvement, etc. When designing equipment, refer to the “Delivery Specification” for the NCE power  
product that you intend to use.  
■
This catalog provides information as of Sep.2010. Specifications and information herein are subject to change without notice.  
Wuxi NCE Power Co., Ltd  
Page  
V6.2  
11