Wuxi-NCE-Power-Semiconductor-NCE65T360F
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NCE65T360D,NCE65T360,NCE65T360F
N-Channel
Super Junction Power MOSFET
Ⅲ
General Description
The
series of devices
use advanced trench gate super
junction technology and design to provide excellent R
DS(ON)
with low gate charge. This super junction MOSFET fits the
industry’s AC-DC SMPS requirements for PFC, AC/DC
power conversion, and industrial power applications.
V
DS
650
290
11.5
V
mΩ
A
R
DS(ON)TYP
I
D
Features
●
New technology for high voltage device
●
Low on-resistance and low conduction losses
●
small package
●
Ultra Low Gate Charge cause lower driving requirements
●
100% Avalanche Tested
●
ROHS compliant
Application
●
Power factor correction
（
PFC
）
●
Switched mode power supplies(SMPS)
●
Uninterruptible Power Supply
（
UPS
）
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
TO-263
Marking
NCE65T360D
NCE65T360
NCE65T360F
NCE65T360D
NCE65T360
NCE65T360F
TO-220
TO-220F
TO-263
TO-220
TO-220F
Unit
Table 1.
Absolute Maximum Ratings (T
C
=25
℃
)
NCE65T360D
NCE65T360
Parameter
Symbol
NCE65T360F
650
V
V
Drain-Source Voltage (
V
GS=
0V
）
V
DS
V
GS
±
30
Gate-Source Voltage (
V
DS
=0V), AC(f>1HZ)
Continuous Drain Current
at T
C
=25°C
Continuous Drain Current
at T
C
=100°C
11.5
7
11.5*
7*
A
I
D (DC)
I
D (DC)
I
DM (pluse)
P
D
A
(Note 1)
46
46*
A
Pulsed drain current
Maximum Power Dissipation(T
C
=25
℃
)
101
0.81
32.6
0.26
W
Derate above 25°C
W/
°C
mJ
A
(Note2)
144
6
E
AS
I
AR
Single pulse avalanche energy
(Note 1)
Avalanche current
Repetitive Avalanche energy
，
t
AR
limited by T
jmax
(Note 1)
0.5
E
AR
mJ
Wuxi NCE Power Co., Ltd
Page 1
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NCE65T360D,NCE65T360,NCE65T360F
NCE65T360D
Parameter
Symbol
NCE65T360F
Unit
NCE65T360
Drain Source voltage slope, V
DS
≤
480 V,
Reverse diode dv/dt
，
V
DS
≤
480 V,I
SD
<I
D
Operating Junction and Storage Temperature Range
* limited by maximum junction temperature
50
15
dv/dt
dv/dt
V/ns
V/ns
°C
-55…+150
T
J
,T
STG
Table 2.
Thermal Characteristic
Parameter
NCE65T360D
Symbol
NCE65T360F
Unit
NCE65T360
Thermal Resistance
，
Junction-to-Case
（
Maximum
）
Thermal Resistance
，
Junction-to-Ambient
（
Maximum
）
R
thJC
R
thJA
1.24
62
3.83
80
°C /W
°C /W
Table 3.
Electrical Characteristics (TA=25
℃
unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
Max Unit
On/off states
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(Tc=25
℃
)
Zero Gate Voltage Drain Current(Tc=125
℃
)
Gate-Body Leakage Current
Gate Threshold Voltage
BV
DSS
I
DSS
V
GS
=0V I
D
=250μA
V
DS
=650V,V
GS
=0V
V
DS
=650V,V
GS
=0V
V
GS
=±20V,V
DS
=0V
V
DS
=V
GS
,I
D
=250μA
V
GS
=10V, I
D
=7A
650
V
0.05
1
100
±100
4
μA
μA
nA
V
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
3
3.5
Drain-Source On-State Resistance
Dynamic Characteristics
Input Capacitance
300
360
mΩ
C
lss
C
oss
C
rss
Q
g
870
54
1.8
19
6
pF
pF
pF
nC
nC
nC
V
DS
=50V,V
GS
=0V,
F=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
V
DS
=480V,I
D
=11.5A,
V
GS
=10V
Gate-Source Charge
Q
gs
Q
gd
Gate-Drain Charge
6.5
Switching times
Turn-on Delay Time
t
d(on)
t
r
t
d(off)
t
f
11
8
nS
nS
nS
nS
Turn-on Rise Time
V
DD
=380V,I
D
=5.5A,
R
G
=3Ω,V
GS
=10V
Turn-Off Delay Time
58
9
70
14
Turn-Off Fall Time
Source- Drain Diode Characteristics
Source-drain current(Body Diode)
Pulsed Source-drain current(Body Diode)
Forward on voltage
I
SD
I
SDM
V
SD
t
rr
11.5
46
A
A
T
C
=25°C
Tj=25°C,I
SD
=11.5A,V
GS
=0V
0.9
220
2.2
19
1.2
V
Reverse Recovery Time
nS
uC
A
Tj=25°C,I
F
=5.8A,
di/dt=100A/μs
Reverse Recovery Charge
Peak Reverse Recovery Current
Q
rr
I
rrm
Notes:
1.Repetitive Rating: Pulse width limited by maximum junction temperature
2.
Tj=25
℃
,VDD=50V,VG=10V, R
G
=25Ω
Wuxi NCE Power Co., Ltd
Page 2
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NCE65T360D,NCE65T360,NCE65T360F
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (curves)
Figure1. Safe operating area
Figure2. Safe operating area for
TO-220F
Figure3. Source-Drain Diode Forward Voltage
Figure4. Output characteristics
Figure5. Transfer characteristics
Figure6. Static drain-source on resistance
Wuxi NCE Power Co., Ltd
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NCE65T360D,NCE65T360,NCE65T360F
Figure7. R
DS(ON)
vs Junction Temperature
Figure8. BV
DSS
vs Junction Temperature
Figure9. Maximum I
D
vs Junction Temperature
Figure10. Gate charge waveforms
Figure11. Capacitance
Figure12. Transient Thermal Impedance
Wuxi NCE Power Co., Ltd
Page 4
v1.1
NCE65T360D,NCE65T360,NCE65T360F
Figure13. Transient Thermal Impedance for
TO-220F
Wuxi NCE Power Co., Ltd
Page 5
v1.1
NCE65T360D,NCE65T360,NCE65T360F
Test circuit
1
）
Gate charge test circuit & Waveform
2
）
Switch Time Test Circuit
：
3
）
Unclamped Inductive Switching Test Circuit & Waveforms
Wuxi NCE Power Co., Ltd
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v1.1
NCE65T360D,NCE65T360,NCE65T360F
TO-263-3L Package Information
Dimensions In Millimeters
Dimensions In Inches
Min.
Symbol
Min.
4.32
–
Max.
4.57
0.25
0.94
1.40
0.61
1.40
9.40
8.23
10.28
8.08
Max.
0.180
0.010
0.037
0.055
0.024
0.055
0.370
0.324
0.405
0.318
A
A1
b
0.170
0.71
1.15
0.46
1.22
8.89
8.01
10.04
7.88
0.028
0.045
0.018
0.048
0.350
0.315
0.395
0.310
b2
c
c2
D
D1
E
E1
e
2.54 BSC
0.100 BSC
L
14.73
2.29
1.15
1.27
15.75
2.79
1.39
1.77
0.580
0.090
0.045
0.050
0.620
0.110
0.055
0.070
L1
L2
L3
Wuxi NCE Power Co., Ltd
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NCE65T360D,NCE65T360,NCE65T360F
TO-220-3L-C Package Information
Dimensions In Millimeters
Min.
Dimensions In Inches
Min.
Symbol
Max.
4.600
2.550
0.910
1.370
0.650
1.400
10.250
9.750
12.950
Max.
0.181
0.100
0.036
0.054
0.026
0.055
0.404
0.384
0.510
A
A1
b
4.400
2.250
0.710
1.170
0.330
1.200
9.910
8.9500
12.650
0.173
0.089
0.028
0.046
0.013
0.047
0.390
0.352
0.498
b1
c
c1
D
E
E1
e
2.540 TYP.
0.100 TYP.
e1
F
4.980
2.650
7.900
0.000
12.900
2.850
5.180
2.950
8.100
0.300
13.400
3.250
0.196
0.104
0.311
0.000
0.508
0.112
0.204
0.116
0.319
0.012
0.528
0.128
H
h
L
L1
V
7.500 REF.
0.295 REF.
Φ
3.400
3.800
0.134
0.150
Wuxi NCE Power Co., Ltd
Page 8
v1.1
NCE65T360D,NCE65T360,NCE65T360F
TO-220F Package Information
Symbol
Dimensions In Millimeters
Min.
Dimensions In Inches
Min.
Max.
4.900
2.740
2.960
0.900
1.580
0.600
10.360
15.970
6.900
16.100
Max.
0.193
0.108
0.117
0.035
0.062
0.024
0.408
0.629
0.272
0.634
A
A1
A2
b1
b2
c
4.500
2.340
2.560
0.700
1.180
0.400
9.960
15.670
6.500
15.500
0.177
0.092
0.101
0.028
0.046
0.016
0.392
0.617
0.256
0.610
D
E
E1
E2
e
2.540 TYP
0.100 TYP
Φ
3.080
12.640
3.030
3.280
13.240
3.430
0.121
0.498
0.119
0.129
0.521
0.135
L
L1
Wuxi NCE Power Co., Ltd
Page 9
v1.1
NCE65T360D,NCE65T360,NCE65T360F
ATTENTION:
■
Any and all NCE products described or contained herein do not have specifications that can handle applications that require
extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure
can be
reasonably expected to result in serious physical and/or material damage. Consult with your
NCE representative nearest you before using any NCE products described or contained herein in such applications.
■
NCE assumes no responsibility for equipment failures that result from using products at values that
exceed, even
momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed
in products specifications of any and all NCE products described or contained herein.
■
Specifications of any and all NCE products described or contained herein stipulate the performance, characteristics, and
functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and
functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that
cannot be evaluated in an independent device, the customer should always evaluate and test
devices mounted
in the
customer’s products or equipment.
■
NCE Power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail
with some probability. It is possible that these probabilistic failures could
give rise to
accidents or events that could
endanger human lives, that could give rise to smoke or fire, or that could
cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or
events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe
design, redundant design, and structural design.
■
In the event that any or all NCE products(including technical data, services) described or contained herein are controlled
under any of applicable local export control laws and regulations, such products must not be exported without obtaining the
export license from the authorities concerned in accordance with the above law.
■
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including
photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission
of NCE Power Semiconductor CO.,LTD.
■
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume
production. NCE believes information herein is accurate and reliable, but no guarantees are made or implied regarding its
use or any infringements of intellectual property rights or other rights of third parties.
■
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the “Delivery Specification” for the NCE product
that you intend to use.
■
This catalog provides information as of Mar. 2010. Specifications and information herein are subject to change without notice.
Wuxi NCE Power Co., Ltd
Page 10
v1.1
