Wuxi-NCE-Power-Semiconductor-NCE80T420

NCE80T420,NCE80T420F  

N-Channel

Super Junction Power MOSFET

 

Ⅲ

 

General Description  

The

series of devices

use advanced trench gate super  

junction technology and design to provide excellent R

DS(ON)  

with low gate charge. This super junction MOSFET fits the  

industry’s AC-DC SMPS requirements for PFC, AC/DC  

power conversion, and industrial power applications.  

V

DS  

800  

420  

11  

V

mΩ  

A

R

DS(ON) MAX  

I

D  

Features  

●

New technology for high voltage device  

●

Low on-resistance and low conduction losses  

●

Small package  

●

Ultra Low Gate Charge cause lower driving requirements  

●

100% Avalanche Tested  

●

ROHS compliant  

Application  

●

Power factor correction

（

PFC

）  

●

Switched mode power supplies(SMPS)  

●

Uninterruptible Power Supply

（

UPS

）  

Schematic diagram  

Package Marking And Ordering Information  

Device  

Device Package  

Marking  

NCE80T420  

NCE80T420F  

TO-220  

NCE80T420  

NCE80T420F  

TO-220F  

TO-220  

TO-220F  

Table 1.

 

Absolute Maximum Ratings (T

C

=25

℃

)  

Parameter  

Symbol  

V

DS  

NCE80T420 NCE80T420F  

Unit  

V

800  

Drain-Source Voltage (

V

GS=

0V

）  

±

30  

V

Gate-Source Voltage (

V

DS=

0V),

AC (f>1 Hz)  

Continuous Drain Current

 

at T

C

=25°C  

Continuous Drain Current

 

at T

C

=100°C  

V

GS  

11  

8.5  

44  

11*  

8.5*  

44*  

A

I

D (DC)  

I

D (DC)  

I

DM (pluse)  

P

D  

A

(Note 1)  

A

Pulsed drain current  

Maximum Power Dissipation(T

C

=25

℃

)  

188  

1.5  

33.8  

0.27  

W

Derate above 25

°C  

W/

°C  

mJ  

A

(Note 2)  

144  

6

E

AS  

I

AR  

Single pulse avalanche energy  

(Note 1)  

Avalanche current  

Repetitive Avalanche energy

，

t

AR

limited by T

Jmax  

(Note 1)  

0.7  

E

AR  

mJ  

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NCE80T420,NCE80T420F  

Parameter  

Symbol  

dv/dt  

NCE80T420 NCE80T420F  

Unit  

V/ns  

V/ns  

°C  

Drain Source voltage slope, V

DS

≤

480 V,  

Reverse diode dv/dt

，

V

DS

≤

480 V,I

SD

<I

D  

Operating Junction and Storage Temperature Range  

* limited by maximum junction temperature  

50  

15  

dv/dt  

-55…+150  

T

J

,T

STG  

Table 2.

 

Thermal Characteristic  

Parameter  

Symbol  

R

thJC  

NCE80T420 NCE80T420F  

Unit  

°C /W  

°C /W  

Thermal Resistance

，

Junction-to-Case

（

Maximum

）  

Thermal Resistance

，

Junction-to-Ambient

（

Maximum

）  

0.66  

62.5  

3.69  

80  

R

thJA  

Table 3.

 

Electrical Characteristics (TA=25

℃

unless otherwise noted)  

Parameter  

Symbol  

Condition  

Min Typ  

Max Unit  

On/off states  

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current(Tc=25

℃

)  

Zero Gate Voltage Drain Current(Tc=125

℃

)  

Gate-Body Leakage Current  

Gate Threshold Voltage  

BV

DSS  

I

DSS  

V

GS

=0V I

D

=250μA  

V

DS

=800V,V

GS

=0V  

V

DS

=800V,V

GS

=0V  

V

GS

=±20V,V

DS

=0V  

V

DS

=V

GS

,I

D

=250μA  

V

GS

=10V, I

D

=5.5A  

800  

V

0.05  

1

100  

±100  

4

μA  

μA  

nA  

V

I

DSS  

I

GSS  

V

GS(th)  

R

DS(ON)  

3

3.5  

Drain-Source On-State Resistance  

Dynamic Characteristics  

Forward Transconductance  

Input Capacitance  

350  

420  

mΩ  

g

FS  

C

lss  

C

oss  

C

rss  

Q

g  

V

DS

= 20V, I

D

= 5.5A  

7

2600  

95  

S

PF  

PF  

PF  

nC  

nC  

nC  

V

DS

=50V,V

GS

=0V,  

F=1.0MHz  

Output Capacitance  

Reverse Transfer Capacitance  

Total Gate Charge  

7

48  

V

DS

=640V,I

D

=11A,  

V

GS

=10V  

Gate-Source Charge  

Q

gs  

Q

gd  

17  

Gate-Drain Charge  

14  

Switching times  

Turn-on Delay Time  

t

d(on)  

t

r  

t

d(off)  

t

f  

12  

7

nS  

nS  

nS  

nS  

Turn-on Rise Time  

V

DD

=480V,I

D

=5.5A,  

R

G

=4Ω,V

GS

=10V  

Turn-Off Delay Time  

62  

5

Turn-Off Fall Time  

Source- Drain Diode Characteristics  

Source-drain current(Body Diode)  

Pulsed Source-drain current(Body Diode)  

Forward on voltage  

I

SD  

I

SDM  

V

SD  

t

rr  

11  

44  

A

A

T

C

=25°C  

T

j

=25°C,I

SD

=11A,V

GS

=0V  

0.9  

290  

2.2  

15  

1.3  

V

Reverse Recovery Time  

nS  

uC  

A

Reverse Recovery Charge  

Peak Reverse Recovery Current  

Q

rr  

T

j

=25°C,I

F

=11A,di/dt=100A/μs  

I

rrm  

Notes 1.

Repetitive Rating: Pulse width limited by maximum junction temperature  

2.

T

j

=25

℃

,V

DD

=50V,V

G

=10V, R

G

=25Ω  

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NCE80T420,NCE80T420F  

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (curves)  

Figure1. Safe operating area for

TO-220  

Figure2. Safe operating area for

TO-220F  

Figure3. Source-Drain Diode Forward Voltage  

Figure4. Output characteristics  

Figure5. Transfer characteristics  

Figure6. Static drain-source on resistance  

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NCE80T420,NCE80T420F  

Figure7. R

DS(ON)

vs Junction Temperature  

Figure8. BV

DSS

vs Junction Temperature  

Figure9. Maximum I

D

vs Junction Temperature  

Figure10. Transient Thermal Impedance for

TO-220  

Figure11. Transient Thermal Impedance for

TO-220F  

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NCE80T420,NCE80T420F  

Test circuit  

1

）

Gate charge test circuit & Waveform  

2

）

Switch Time Test Circuit

：  

3

）

Unclamped Inductive Switching Test Circuit & Waveforms  

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NCE80T420,NCE80T420F  

TO-220-3L-C Package Information  

Dimensions In Millimeters  

Symbol  

Dimensions In Inches  

Min.  

4.400  

2.250  

0.710  

1.170  

0.330  

1.200  

9.910  

8.9500  

12.650  

Max.  

4.600  

2.550  

0.910  

1.370  

0.650  

1.400  

10.250  

9.750  

12.950  

Min.  

Max.  

0.181  

0.100  

0.036  

0.054  

0.026  

0.055  

0.404  

0.384  

0.510  

A

A1  

b

0.173  

0.089  

0.028  

0.046  

0.013  

0.047  

0.390  

0.352  

0.498  

b1  

c

c1  

D

E

E1  

e

2.540 TYP.  

0.100 TYP.  

e1  

F

4.980  

2.650  

7.900  

0.000  

12.900  

2.850  

5.180  

2.950  

8.100  

0.300  

13.400  

3.250  

0.196  

0.104  

0.311  

0.000  

0.508  

0.112  

0.204  

0.116  

0.319  

0.012  

0.528  

0.128  

H

h

L

L1  

V

7.500 REF.  

0.295 REF.  

Φ

3.400  

3.800  

0.134  

0.150  

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NCE80T420,NCE80T420F  

TO-220F Package Information  

Symbol  

Dimensions In Millimeters  

Min.  

Dimensions In Inches  

Max.  

4.900  

2.740  

2.960  

0.900  

1.580  

0.600  

10.360  

15.970  

6.900  

16.100  

Min.  

Max.  

0.193  

0.108  

0.117  

0.035  

0.062  

0.024  

0.408  

0.629  

0.272  

0.634  

A

A1  

A2  

b1  

b2  

c

4.500  

2.340  

2.560  

0.700  

1.180  

0.400  

9.960  

15.670  

6.500  

15.500  

0.177  

0.092  

0.101  

0.028  

0.046  

0.016  

0.392  

0.617  

0.256  

0.610  

D

E

E1  

E2  

e

2.540 TYP  

0.100 TYP  

Φ

3.080  

12.640  

3.030  

3.280  

13.240  

3.430  

0.121  

0.498  

0.119  

0.129  

0.521  

0.135  

L

L1  

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NCE80T420,NCE80T420F  

ATTENTION:  

■

Any and all NCE products described or contained herein do not have specifications that can handle applications that require  

extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure  

can be

 

reasonably expected to result in serious physical and/or material damage. Consult with your  

NCE representative nearest you before using any NCE products described or contained herein in such applications.  

■

NCE assumes no responsibility for equipment failures that result from using products at values that  

exceed, even

 

momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed  

in products specifications of any and all NCE products described or contained herein.  

■

Specifications of any and all NCE products described or contained herein stipulate the performance, characteristics, and  

functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and  

functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that  

cannot be evaluated in an independent device, the customer should always evaluate and test  

devices mounted

 

in the

 

customer’s products or equipment.  

■

NCE Power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all  

semiconductor products fail

 

with some probability. It is possible that these probabilistic failures could  

give rise to

 

accidents or events that could

 

endanger human lives, that could give rise to smoke or fire, or that could  

cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or  

events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe  

design, redundant design, and structural design.  

■

In the event that any or all NCE products(including technical data, services) described or contained herein are controlled  

under any of applicable local export control laws and regulations, such products must not be exported without obtaining the  

export license from the authorities concerned in accordance with the above law.  

■

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including  

photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission  

of NCE Power Semiconductor CO.,LTD.  

■

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume  

production. NCE believes information herein is accurate and reliable, but no guarantees are made or implied regarding its  

use or any infringements of intellectual property rights or other rights of third parties.  

■

Any and all information described or contained herein are subject to change without notice due to  

product/technology improvement, etc. When designing equipment, refer to the “Delivery Specification” for the NCE product  

that you intend to use.  

■

This catalog provides information as of Mar. 2010. Specifications and information herein are subject to change without notice.  

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