Wuxi-NCE-Power-Semiconductor-NCEP60T12A
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Pb Free Product
NCEP60T12A
NCE N-Channel
Super Trench
Power MOSFET
Description
The NCEP60T12A uses
Super Trench
technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an extremely
low combination of R
DS(ON)
and Q
g
. This device is ideal for
high-frequency switching and synchronous rectification.
Schematic diagram
General Features
●
V
DS
=60
V
,
I
D
=120A
R
DS(ON)
< 4.0
mΩ @ V
GS
=10V (Typ:3.5m
Ω
)
R
DS(ON)
< 5.0
mΩ @ V
GS
=4.5V (Typ:4.0m
Ω
)
●
Excellent gate charge x R
DS(on)
product
●
Very low on-resistance
R
DS(on)
●
175 °C operating temperature
●
Pb-free lead plating
●
100% UIS tested
Marking and pin assignment
Application
●
DC/DC Converter
●
Ideal for high-frequency switching and synchronous
rectification
100% UIS TESTED!
100%
Δ
Vds TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
NCEP60T12A
NCEP60T12A
TO-220-3L
–
–
–
Absolute Maximum Ratings (T
C
=25
℃
unless otherwise noted)
Parameter
Symbol
Limit
60
Unit
Drain-Source Voltage
Gate-Source Voltage
V
V
V
DS
±20
V
GS
Drain Current-Continuous (Silicon Limited)
Drain Current-Continuous(T
C
=100
℃
)
Pulsed Drain Current
120
100
A
I
D
I
D
(100
℃
)
I
DM
A
480
A
Maximum Power Dissipation
180
W
P
D
Derating factor
Single pulse avalanche energy
(Note 5)
1.2
W/
℃
mJ
℃
E
AS
500
Operating Junction and Storage Temperature Range
-55
T
o
1
75
T
J
,T
STG
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Thermal Characteristic
NCEP60T12A
Thermal Resistance,Junction-to-Case
(Note 2)
R
θJ
C
0.83
℃
/W
Electrical Characteristics (T
C
=25
℃
unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics
(Note 3)
BV
DSS
I
DSS
V
GS
=0V I
D
=250μA
V
DS
=60V,V
GS
=0V
V
GS
=±20V,V
DS
=0V
60
–
1
V
–
–
–
–
μA
nA
I
GSS
±100
Gate Threshold Voltage
V
GS(th)
R
DS(ON)
g
FS
V
DS
=V
GS
,I
D
=250μA
V
GS
=10V, I
D
=60A
V
GS
=4.5V, I
D
=60A
V
DS
=10V,I
D
=60A
1.0
–
1.7
3.5
4.0
–
2.4
4.0
5.0
–
V
mΩ
mΩ
S
Drain-Source On-State Resistance
–
Forward Transconductance
Dynamic Characteristics
(Note4)
Input Capacitance
40
C
lss
C
oss
C
rss
–
–
–
4000
680
23
–
–
–
PF
PF
PF
V
DS
=30V,V
GS
=0V,
F=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
(Note 4)
Turn-on Delay Time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
–
–
–
11
5
–
–
–
–
nS
nS
nS
nS
nC
nC
nC
Turn-on Rise Time
V
DD
=30V,I
D
=60A
V
GS
=10V,R
G
=4.7
Ω
Turn-Off Delay Time
56
12
67
12
8.5
Turn-Off Fall Time
Total Gate Charge
Q
g
Q
gs
Q
gd
V
DS
=30V,I
D
=60A,
V
GS
=10V
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
Diode Forward Current
(Note 2)
Reverse Recovery Time
V
SD
I
S
V
GS
=0V,I
S
=120A
–
–
–
–
1.2
V
A
–
120
t
rr
48
60
nS
nC
T
J
= 25°C, I
F
= I
S
di/dt = 100A/
μs
(Note3)
Reverse Recovery Charge
Qrr
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. EAS condition : Tj=25
℃
,V
DD
=30V,V
G
=10V,L=0.5mH,Rg=25
Ω
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NCEP60T12A
Test Circuit
1) E
AS
test Circuit
2) Gate charge test Circuit
3) Switch Time Test Circuit
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NCEP60T12A
Typical Electrical and Thermal Characteristics
Vds Drain-Source Voltage (V)
T
J
-Junction
T
e
mperature(
℃
)
Figure 1 Output Characteristics
Figure 4 Rdson-JunctionTemperature
Vgs Gate-Source Voltage (V)
Qg Gate Charge (nC)
Figure 2 Transfer Characteristics
Figure 5 Gate Charge
I
D
– Drain Current (A)
Vsd Source-Drain Voltage (V)
Figure 3 Rdson-
Drain Current
Figure 6 Source- Drain Diode Forward
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NCEP60T12A
Vds Drain-Source Voltage (V)
T
J
-Junction
T
e
mperature(
℃
)
Figure 7 Capacitance vs Vds
Figure 9 Power De-rating
Vds Drain-Source Voltage (V)
T
J
-Junction
T
e
mperature (
℃
)
Figure 8 Safe Operation Area
Figure 10 Current De-rating
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
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TO-220-3L Package Information
NCEP60T12A
Dimensions In Millimeters
Min.
Dimensions In Inches
Symbol
Max.
4.600
2.550
0.910
1.370
0.650
1.400
10.250
9.750
12.950
Min.
Max.
0.181
0.100
0.036
0.054
0.026
0.055
0.404
0.384
0.510
A
A1
b
4.400
2.250
0.710
1.170
0.330
1.200
9.910
8.9500
12.650
0.173
0.089
0.028
0.046
0.013
0.047
0.390
0.352
0.498
b1
c
c1
D
E
E1
e
2.540 TYP.
0.100 TYP.
e1
F
4.980
2.650
7.900
0.000
12.900
2.850
5.180
2.950
8.100
0.300
13.400
3.250
0.196
0.104
0.311
0.000
0.508
0.112
0.204
0.116
0.319
0.012
0.528
0.128
H
h
L
L1
V
7.500 REF.
0.295 REF.
Φ
3.400
3.800
0.134
0.150
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NCEP60T12A
Attention:
■
Any and all NCE power products described or contained herein do not have specifications that can handle applications that
require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications
whose failure can be
reasonably expected to result in serious physical and/or material damage. Consult
with your NCE
power representative nearest you before using any NCE power products described or contained herein in
such applications.
■
NCE power
assumes no responsibility for equipment failures that result from using products at values
that exceed,
even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters)
listed in products specifications of any and all NCE power products described or contained herein.
■
Specifications of any and all NCE power products described or contained herein stipulate the performance, characteristics,
and functions of the described products in the independent state, and are not guarantees of the performance, characteristics,
and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states
that cannot
be evaluated in an independent device, the customer should always evaluate and test
devices mounted
in the
customer’s products or equipment.
■
NCE power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail
with some probability. It is possible that these probabilistic failures could
give rise to
accidents or events that could
endanger human lives, that could give rise to smoke or fire, or that could
cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or
events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe
design, redundant design, and structural design.
■
In the event that any or all NCE power products(including technical data, services) described or contained herein are
controlled under any of applicable local export control laws and regulations, such products must not be exported without
obtaining the export license from the authorities concerned in accordance with the above law.
■
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including
photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission
of NCE power Semiconductor CO.,LTD.
■
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume
production. NCE power believes information herein is accurate and reliable, but no guarantees are made or implied
regarding its use or any infringements of intellectual property rights or other rights of third parties.
■
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the “Delivery Specification” for the NCE power
product that you intend to use.
■
This catalog provides information as of Sep.2010. Specifications and information herein are subject to change without notice.
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