WUXI-UNIGROUP-MICRO-TMP120N08A
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TMB120N08A,TMP120N08A
Wuxi Unigroup Microelectronics CO.,LTD.
80V N-Channel Trench MOSFET
Product Summary
Features
Trench Power Technology
Low R
DS(ON)
V
DS
80V
< 6m
Ω
120A
R
DS(ON)
(at V
GS
=10V)
I
D
(at V
GS
=10V)
Low Gate Charge
Optimized for Fast-switching Applications
100% UIS Tested
Applications
Synchronous Rectification
in DC/DC and AC/DC Converters
Isolated DC/DC Converters in Telecom and Industrial
TO-263
TO-220
Device
Package
Marking
120N08A
120N08A
TMB120N08A
TMP120N08A
TO-263
TO-220
Absolute Maximum Ratings
T
C
= 25ºC, unless otherwise noted
Parameter
Symbol
Value
Unit
Drain-Source Voltage (V
GS
= 0V)
V
DSS
80
120
84
V
T
C
= 25ºC
Continuous Drain Current
I
D
A
T
C
= 100ºC
Pulsed Drain Current
Gate-Source Voltage
(note1)
(note2)
I
DM
480
±
20
A
V
V
GSS
Single Pulse Avalanche Energy
Avalanche Current
E
AS
I
As
540
mJ
60
A
W
W
T
C
= 25ºC
208
104
Power Dissipation
(note3)
P
D
T
C
= 100ºC
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55~+175
ºC
Thermal Resistance
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
R
thJC
R
thJA
0.72
62.5
ºC /W
V3.0
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TMB120N08A,TMP120N08A
Wuxi Unigroup Microelectronics CO.,LTD.
Specifications
T
J
= 25ºC
, unless otherwise noted
Value
Parameter
Symbol
Test Conditions
Unit
Min.
Typ.
Max.
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0V, I
D
= 250µA
V
DS
= 80V, V
GS
= 0V, T
J
= 25ºC
V
DS
= 80V, V
GS
= 0V, T
J
= 100ºC
V
GS
=
±
20V
80
—
—
—
—
1
V
Zero Gate Voltage Drain Current
I
DSS
μA
—
—
25
Gate-Source Leakage
Gate-Source Threshold Voltage
Drain-Source On-Resistance
Forward Transconductance
Dynamic
I
GSS
V
GS(th)
R
DS(on)
g
fs
—
—
±
100
4.0
6.0
—
nA
V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 30A
2.0
—
—
4.6
—
mΩ
S
V
DS
= 5V, I
D
= 20A
40
Input Capacitance
C
iss
C
oss
C
rss
Q
g
—
—
—
—
—
—
—
—
—
—
5400
390
260
130
24
—
—
—
—
—
—
—
—
—
—
V
GS
= 0V,
V
DS
= 40V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
pF
nC
V
DD
= 40V, I
D
= 20A,
V
GS
= 10V
Gate-Source Charge
Gate-Drain Charge
Q
gs
Q
gd
t
d(on)
t
r
49
Turn-on Delay Time
Turn-on Rise Time
28
29.5
41
V
DD
= 40
V
,
I
D
= 2A,
ns
R
G
= 2.5
Ω
Turn-off Delay Time
Turn-off Fall Time
t
d(off)
t
f
15.6
Drain-Source Body Diode Characteristics
Continuous Body Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
I
S
I
SM
V
SD
t
rr
—
—
—
—
—
—
—
120
480
1.2
—
T
C
= 25ºC
A
T
J
= 25ºC, I
SD
= 20A, V
GS
= 0V
—
V
Reverse Recovery Time
45
54
ns
nC
I
F
= 20A,
di
F
/dt = 500A/
μs
Reverse Recovery Charge
Q
rr
—
Notes
1. Repetitive
Rating: Pulse Width limited by maximum junction temperature
2. I
AS
= 60A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25
°
C
3. The
power dissipation PD is based on TJ(MAX)=175
°
C, using junction-to-case thermal resistance.
V3.0
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TMB120N08A,TMP120N08A
Wuxi Unigroup Microelectronics CO.,LTD.
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
V
DS
= 10V
200
180
160
140
120
100
80
100
80
60
40
20
0
10V
8V
6V
5V
4.5V
4V
T
J
= 25
º
C
60
T
J
= 150
º
C
40
20
0
0
1
2
3
4
5
0
0
0
1
2
3
4
5
60
1
V
DS
, Drain-to-Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
Figure 3. On-Resistance vs. Drain Current
Figure 4. Capacitance
10
4
6
5.5
5
V
GS
= 10V
T
J
= 25
º
C
C
iss
4.5
4
10
3
C
oss
V
GS
= 0
f = 1MHz
3.5
3
C
rss
50
10
2
10
20
30
40
0
30
60
90
120
I
D
, Drain Current (A)
Figure 5. Gate Charge
V
DS
= 40V
V
DS
, Drain-to-Source Voltage (V)
Figure 6. Body Diode Forward Voltage
10
2
10
8
10
1
10
0
T
J
= 150
º
C
6
T
J
= 25
º
C
10
-1
10
-2
10
-3
10
-4
4
2
0
0
50
100
150
0.2
0.4
0.6
0.8
Q
g
, Total Gate Charge (nC)
V
SD
, Source-to-Drain Voltage (V)
V3.0
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TMB120N08A,TMP120N08A
Wuxi Unigroup Microelectronics CO.,LTD.
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 7. On-Resistance vs. Temperature
Figure 8. Threshold Voltage vs. Temperature
1
2.5
2
V
GS
= 10V
I
D
= 30A
I
D
= 250µA
0.5
0
1.5
1
-0.5
-1
0.5
0
-1.5
-50
0
50
100
150
-50
0
50
100
150
T
J
, Junction Temperature (
º
C)
T
J
, Junction Temperature (
º
C)
Figure 9. Transient Thermal Impedance
Figure 10. Safe operation area
10
1
10
3
10
2
10
1
10
0
10
-1
10
-2
10
0
D = 0.5
D = 0.2
D = 0.1
10
-1
10
-2
t
p
= 10us
t
p
= 100us
t
p
= 1ms
t
p
= 10ms
DC
D = 0.05
D = 0.02
D = 0.01
Single Pulse
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
V
DS
, Drain-Source Voltage(V)
T
p
, Pulse Width (s)
V3.0
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TMB120N08A,TMP120N08A
Wuxi Unigroup Microelectronics CO.,LTD.
Figure A
：
Gate Charge Test Circuit and Waveform
Figure B
：
Resistive Switching Test Circuit and Waveform
Figure C
：
Unclamped Inductive Switching Test Circuit and Waveform
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TMB120N08A,TMP120N08A
Wuxi Unigroup Microelectronics CO.,LTD.
Disclaimer
All product specifications and data are subject to change without notice.
For documents and material available from this datasheet, Wuxi Unigroup does not warrant or assume
any legal liability or responsibility for the accuracy, completeness of any product or technology
disclosed hereunder.
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by this document or by any conduct of Wuxi Unigroup.
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damages arising or resulting from such use or sale.
Wuxi Unigroup disclaims any and all liability arising out of the use or application of any product
described herein or of any information provided herein to the maximum extent permitted by law. The
product specifications do not expand or otherwise modify Wuxi
Unigroup’s
terms and conditions of
purchase, including but not limited to the warranty expressed therein, which apply to these products.
Wuxi Unigroup Microelectronics CO., LTD. strives to supply high-quality high-reliability products.
However, any and all semiconductor products fail with some probability. It is possible that these
probabilistic failures could give rise to accidents or events that could endanger human lives that could
give rise to smoke or fire, or that could cause damage to other property. When designing equipment,
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Information (including circuit diagrams and circuit parameters) herein is for example only. It is not
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but no guarantees are made or implied regarding its use or any infringements of intellectual property
rights or other rights of third parties.
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