WUXI-UNIGROUP-MICRO-TPA70R360M
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TPA70R360M, TPD70R360M, TPP70R360M, TPU70R360M
Wuxi Unigroup Microelectronics Company
700V Super-Junction Power MOSFET
FE
A
T
URES
Very low FOM R
DS(on)
×
Q
g
100% avalanche tested
RoHS compliant
APPLICATIONS
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply (UPS)
Power Factor Correction (PFC)
Device Marking and Package Information
Device
TPA70R360M
TPD70R360M
TPP70R360M
TPU70R360M
TO-251
Package
Marking
TO-220F
TO-252
TO-220
70R360M
70R360M
70R360M
70R360M
Absolute Maximum Ratings
T
C
= 25ºC, unless otherwise noted
Value
Parameter
Symbol
V
DSS
I
D
Unit
V
TO-252,TO-220,TO-251
TO-220F
Drain-Source Voltage (V
GS
= 0V)
700
11
T
C
= 25ºC
T
C
= 100ºC
Continuous Drain Current
A
6.6
I
DM
V
GSS
E
AS
33
A
V
Pulsed Drain Current
Gate-Source Voltage
(note1)
±30
Single Pulse Avalanche Energy
Avalanche Current
(note2)
(note1)
(note1)
215
mJ
A
I
AR
1.8
Repetitive Avalanche Energy
E
AR
0.32
50
mJ
V/ns
V/ns
W
MOSFET dv/dt ruggedness, V
DS
= 0…480V
Reverse diode dv/dt, V
DS
= 0…480V, I
SD
≤
I
D
Power Dissipation (T
C
= 25ºC)
dv/dt
dv/dt
P
D
15
31
83
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55~+150
ºC
Thermal Resistance
Value
Parameter
Symbol
Unit
TO-252,TO-220,TO-251
TO-220F
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
R
thJC
R
thJA
1.5
62
4
ºC/W
80
V1.0
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TPA70R360M, TPD70R360M, TPP70R360M, TPU70R360M
Wuxi Unigroup Microelectronics Company
Specifications
T
J
= 25ºC, unless otherwise noted
Value
Typ.
Parameter
Symbol
Test Conditions
Unit
Min.
Max.
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0V, I
D
= 250µA
700
—
—
—
—
1
V
V
DS
= 700V, V
GS
= 0V, T
J
= 25ºC
Zero Gate Voltage Drain Current
I
DSS
μA
V
DS
= 700V, V
GS
= 0V, T
J
= 150ºC
—
—
100
±
100
4.5
0.36
—
Gate-Source Leakage
Gate-Source Threshold Voltage
Drain-Source On-Resistance
(Note3)
Gate resistance
I
GSS
V
GS(th)
R
DS(on)
R
G
V
GS
=
±
30V
—
—
nA
V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 5.5A
f = 1.0MHz open drain
2.5
—
—
0.31
18
Ω
—
Ω
Dynamic
Input Capacitance
C
iss
C
oss
C
rss
Q
g
—
—
—
—
—
—
—
—
—
—
871
37
—
—
—
—
—
—
—
—
—
—
V
GS
= 0V,
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
V
DS
= 100V,
f = 1.0MHz
pF
nC
5
22
V
DD
= 520V, I
D
= 11A,
Gate-Source Charge
Gate-Drain Charge
Q
gs
Q
gd
t
d(on)
t
r
4
V
GS
= 10V
8
Turn-on Delay Time
Turn-on Rise Time
69.7
69.5
145
59
V
DD
= 400
V
,
I
D
= 11A,
ns
R
G
= 25
Ω
Turn-off Delay Time
Turn-off Fall Time
t
d(off)
t
f
Drain-Source Body Diode Characteristics
Continuous Body Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
I
S
I
SM
V
SD
t
rr
—
—
—
—
—
—
—
—
11
33
1.2
—
T
C
= 25ºC
A
T
J
= 25ºC, I
SD
= 11A, V
GS
= 0V
0.9
377
3.4
17.8
V
ns
μC
A
Reverse Recovery Time
V
R
= 400V, I
F
= I
S
,
di
F
/dt = 100A/
μs
Reverse Recovery Charge
Q
rr
I
rrm
—
Peak Reverse Recovery Current
—
Notes
1. Repetitive
Rating: Pulse Width limited by maximum junction temperature
2.
AS
= 1.8A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
3. Pulse
Test: Pulse Width
≤ 300μs, Duty Cycle ≤
1%
I
V1.0
2
TPA70R360M, TPD70R360M, TPP70R360M, TPU70R360M
Wuxi Unigroup Microelectronics Company
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
35
30
25
20
15
10
5
32
28
24
20
16
12
8
20V
10V
8V
7V
6V
5.5V
5V
4.5v
V
DS
= 20V
T
J
= 25ºC
T
J
= 150ºC
4
0
0
0
2
4
6
8
10
0
5
10
15
20
V
DS
, Drain-to-Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
Figure 3. On-Resistance vs. Drain Current
0.45
Figure 4. Capacitance
10
4
V
GS
= 10V
T
J
= 25ºC
C
iss
0.4
0.35
0.3
10
3
10
2
10
1
10
0
C
oss
C
rss
0.25
0.2
V
GS
= 0
f = 1MHz
0
3
6
9
12
15
18
0
25
50
75
100
125
150
I
D
, Drain Current (A)
V
DS
, Drain-to-Source Voltage (V)
Figure 5. Gate Charge
Figure 6. Body Diode Forward Voltage
10
2
12
10
8
10
1
10
0
T
J
= 125ºC
V
DD
= 120V
6
T
J
= 25ºC
V
DD
= 520V
10
-1
10
-2
10
-3
4
2
0
0
5
10
15
20
25
0
0.5
1
1.5
Q
g
, Total Gate Charge (nC)
V
SD
, Source-to-Drain Voltage (V)
V1.0
3
TPA70R360M, TPD70R360M, TPP70R360M, TPU70R360M
Wuxi Unigroup Microelectronics Company
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 7. On-Resistance vs.
Junction Temperature
Figure 8. Breakdown voltage
vs. Junction Temperature
1.3
1.2
1.1
1
3
2.5
2
V
GS
= 10V
I
D
= 5.5A
1.5
1
0.9
0.8
0.5
0
-50
0
50
100
150
-30
0
30
60
90
120
150
T
J
, Junction Temperature (
º
C)
T
J
, Junction Temperature (
º
C)
Figure 9. Transient Thermal Impedance
TO-252/TO-220/TO-251
Figure 10. Transient Thermal Impedance
TO-220F
10
0
10
1
10
-1
10
-2
10
-3
10
0
D = 0.5
D = 0.2
D = 0.1
D = 0.5
D = 0.2
D = 0.1
10
-1
10
-2
D = 0.05
D = 0.02
D = 0.01
Single Pulse
D = 0.05
D = 0.02
D = 0.01
Single Pulse
10
-4
10
-3
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
T
p
, Pulse Width (s)
T
p
, Pulse Width (s)
Figure 12. Safe operation area for
TO-220F
Figure 11. Safe operation area for
TO-252/TO-220/TO-251
10
2
10
1
10
2
10
1
10
0
10
0
10
-1
10
-2
t
p
= 1us
t
p
= 10us
t
p
= 100us
t
p
= 1ms
t
p
= 10ms
DC
t
p
= 1us
t
p
= 10us
t
p
= 100us
t
p
= 1ms
t
p
= 10ms
DC
10
-1
10
-2
10
0
10
1
10
2
10
3
10
-1
10
0
10
1
10
2
10
3
V
DS
, Drain-Source Voltage(V)
V
DS
, Drain-Source Voltage(V)
V1.0
4
TPA70R360M, TPD70R360M, TPP70R360M, TPU70R360M
Wuxi Unigroup Microelectronics Company
Figure A
：
Gate Charge Test Circuit and Waveform
Figure B
：
Resistive Switching Test Circuit and Waveform
Figure C
：
Unclamped Inductive Switching Test Circuit and Waveform
V1.0
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TPA70R360M, TPD70R360M, TPP70R360M, TPU70R360M
Wuxi Unigroup Microelectronics Company
TO-220F
Symbol
Min.
Nom
Max.
Symbol
Min.
Nom
Max.
E
A
9.96
4.50
2.34
0.30
2.56
0.40
1.20
15.57
10.16
4.70
10.36
4.90
2.74
0.60
2.96
0.65
1.35
16.17
e
L
2.54BSC
12.98
3.03
12.68
2.88
3.03
3.15
3.15
1.25
1.18
0.70
13.28
3.18
3.38
3.65
3.45
1.55
1.43
0.95
A1
A2
A4
c
2.54
L1
0.45
Φ
P
Φ
P3
F3
G3
b1
3.18
2.76
3.45
0.50
3.30
c1
D
1.30
1.35
15.87
6.70REF
1.28
H1
b2
0.80
V1.0
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TPA70R360M, TPD70R360M, TPP70R360M, TPU70R360M
Wuxi Unigroup Microelectronics Company
TO-252
Unit:mm
Unit:mm
Symbol
Min.
Nom
Max.
Symbol
Min.
Nom
Max.
A
A1
A2
b
2.20
0.00
0.97
0.68
5.20
0.43
5.98
2.30
–
2.40
0.20
1.17
0.90
5.50
0.63
6.22
e
H
2.286 BSC
9.40
1.38
10.10
10.50
1.75
1.07
0.78
5.33
0.53
6.10
5.30 REF
6.60
–
L
1.50
L1
L2
L3
L4
L5
θ
2.90 REF
b3
c
0.51 BSC
0.88
–
–
1.28
1.00
1.95
8
°
D
–
1.80
–
D1
E
1.65
0
°
6.40
4.63
6.80
–
E1
V1.0
7
TPA70R360M, TPD70R360M, TPP70R360M, TPU70R360M
Wuxi Unigroup Microelectronics Company
TO-220
Unit:mm
Unit:mm
Symbol
Min.
Nom
Max.
Symbol
Min.
Nom
Max.
A
A1
b
4.37
1.25
2.20
1.17
0.45
15.10
8.80
5.50
9.70
4.57
1.30
2.40
1.27
0.50
15.60
9.10
–
4.77
1.45
2.60
1.47
0.60
16.10
9.40
–
E3
e
7.00
–
–
2.54BSC
5.08BSC
6.50
e1
H1
L
b2
c
6.25
12.75
–
6.85
13.80
3.40
3.80
3.00
13.50
3.10
D
L1
Φ
P
Q
D1
D2
E
3.40
2.60
3.60
2.80
10.00
10.30
V1.0
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TPA70R360M, TPD70R360M, TPP70R360M, TPU70R360M
Wuxi Unigroup Microelectronics Company
TO-251
Unit:mm
Unit:mm
Symbol
Min.
2.20
0.97
0.68
0.00
0.00
5.20
0.43
5.98
Nom
2.30
1.07
0.78
0.04
0.04
5.33
0.53
6.10
Max.
2.40
1.17
0.90
0.10
0.10
5.50
0.63
6.22
Symbol
Min.
Nom
Max.
A
A2
b
D1
5.30 REF
E
E1
e
6.40
4.63
6.60
–
6.80
–
2.286 BSC
16.52
9.40
b2
b2
＇
b3
c
H
16.22
9.15
0.88
1.65
16.82
9.65
1.28
1.95
L1
L3
L5
1.02
D
1.80
V1.0
9
TPA70R360M, TPD70R360M, TPP70R360M, TPU70R360M
Wuxi Unigroup Microelectronics Company
Disclaimer
All product specifications and data are subject to change without notice.
For documents and material available from this datasheet, Wuxi Unigroup does not warrant or assume
any legal liability or responsibility for the accuracy, completeness of any product or technology
disclosed hereunder.
No license, express or implied, by estoppels or otherwise, to any intellectual property rights is granted
by this document or by any conduct of Wuxi Unigroup.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining
applications. Customers using or selling Wuxi Unigroup products not expressly indicated for use in
such applications do so entirely at their own risk and agree to fully indemnify Wuxi Unigroup for any
damages arising or resulting from such use or sale.
Wuxi Unigroup disclaims any and all liability arising out of the use or application of any product
described herein or of any information provided herein to the maximum extent permitted by law. The
product specifications do not expand or otherwise modify Wuxi Unigroup’s terms and conditions of
purchase, including but not limited to the warranty expressed therein, which apply to these products.
Wuxi Unigroup Microelectronics CO., LTD. strives to supply high-quality high-reliability products.
However, any and all semiconductor products fail with some probability. It is possible that these
probabilistic failures could give rise to accidents or events that could endanger human lives that could
give rise to smoke or fire, or that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures
include but are not limited to protective circuits and error prevention circuits for safe design, redundant
design, and structural design.
In the event that any or all Wuxi Unigroup products (including technical data, services) described or
contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
accordance with the above law.
Information (including circuit diagrams and circuit parameters) herein is for example only. It is not
guaranteed for volume production. Wuxi Unigroup believes information herein is accurate and reliable,
but no guarantees are made or implied regarding its use or any infringements of intellectual property
rights or other rights of third parties.
V1.0
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