WUXI-UNIGROUP-MICRO-TPA80R250A
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TPA80R250A, TPP80R250A, TPW80R250A
Wuxi Unigroup Microelectronics Company
800V Super-Junction Power MOSFET
FE
A
T
URES
Very low FOM R
DS(on)
×
Q
g
100% avalanche tested
RoHS compliant
APPLICATIONS
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply (UPS)
Power Factor Correction (PFC)
D
G
Device Marking and Package Information
Device
Package
TO-220F
TO-220
TO-247
Marking
80R250A
80R250A
80R250A
S
TPA80R250A
TPP80R250A
TPW80R250A
Absolute Maximum Ratings
T
C
= 25ºC, unless otherwise noted
Value
Parameter
Symbol
V
DSS
I
D
Unit
V
TO-220F
TO-220,TO-247
Drain-Source Voltage (V
GS
= 0V)
800
18
T
C
= 25ºC
T
C
= 100ºC
Continuous Drain Current
A
10.8
54
Pulsed Drain Current
Gate-Source Voltage
(note1)
I
DM
V
GSS
E
AS
A
V
±
30
280
7.5
Single Pulse Avalanche Energy
Avalanche Current
(note2)
(note1)
(note1)
mJ
A
I
AR
Repetitive Avalanche Energy
Power Dissipation (T
C
= 25ºC
)
E
AR
0.5
mJ
W
ºC
P
D
34
240
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55~+150
Thermal Resistance
Value
Parameter
Symbol
Unit
TO-220F
TO-220,TO-247
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
R
thJC
R
thJA
3.67
0.52
62
ºC /W
80
V2.0
1
TPA80R250A, TPP80R250A, TPW80R250A
Wuxi Unigroup Microelectronics Company
Specifications
T
J
= 25ºC
, unless otherwise noted
Value
Parameter
Symbol
Test Conditions
Unit
Min.
Typ.
Max.
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0V, I
D
= 250µA
V
DS
= 800V, V
GS
= 0V, T
J
= 25ºC
V
DS
= 800V, V
GS
= 0V, T
J
= 150ºC
V
GS
=
±
30V
800
—
—
—
—
1
V
Zero Gate Voltage Drain Current
I
DSS
μA
—
—
100
±
100
4.5
0.28
—
Gate-Source Leakage
Gate-Source Threshold Voltage
Drain-Source On-Resistance
(Note3)
Forward Transconductance
(Note3)
Dynamic
I
GSS
V
GS(th)
R
DS(on)
g
fs
—
—
nA
V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 9A
2.5
—
—
0.24
10
Ω
S
V
DS
= 10V, I
D
= 9A
—
Input Capacitance
C
iss
C
oss
C
rss
Q
g
—
—
—
—
—
—
—
—
—
—
3871
217
17.1
62.3
14.5
23
—
—
—
—
—
—
—
—
—
—
V
GS
= 0V,
V
DS
= 50V,
f = 1.0MHz
Output Capacitance
pF
nC
Reverse Transfer Capacitance
Total Gate Charge
V
DD
= 640V, I
D
= 18A,
V
GS
= 10V
Gate-Source Charge
Gate-Drain Charge
Q
gs
Q
gd
t
d(on)
t
r
Turn-on Delay Time
49
Turn-on Rise Time
42.6
166
13
V
DD
= 400
V
,
I
D
= 9A,
ns
R
G
= 25
Ω
Turn-off Delay Time
t
d(off)
t
f
Turn-off Fall Time
Drain-Source Body Diode Characteristics
Continuous Body Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
I
S
I
SM
V
SD
t
rr
—
—
—
—
—
—
—
—
18
54
1.2
—
T
C
= 25ºC
A
T
J
= 25ºC, I
SD
= 18A, V
GS
= 0V
0.9
400
4
V
ns
μC
A
Reverse Recovery Time
V
R
= 400V, I
F
= I
S
,
di
F
/dt = 100A/
μs
Reverse Recovery Charge
Q
rr
I
rrm
—
Peak Reverse Recovery Current
20
—
Notes
1. Repetitive
Rating: Pulse Width limited by maximum junction temperature
2. I
AS
= 7.5A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25
°
C
3. Pulse
Test: Pulse Width
≤ 300μs, Duty Cycle ≤
1%
V2.0
2
TPA80R250A, TPP80R250A, TPW80R250A
Wuxi Unigroup Microelectronics Company
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 1. Output Characteristics
20V
10V
8V
7V
6V
5V
Figure 2. Transfer Characteristics
45
40
35
30
25
20
15
10
5
35
30
25
20
15
10
5
V
DS
= 10V
T
J
= 25ºC
T
J
= 150ºC
0
0
0
5
10
15
20
0
2
4
6
8
10
V
DS
, Drain-to-Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
Figure 3. On-Resistance vs. Drain Current
Figure 4. Capacitance
10
5
10
4
0.3
0.28
0.26
0.24
0.22
0.2
V
GS
= 10V
T
J
= 25ºC
C
iss
10
3
10
2
C
oss
C
rss
10
1
10
0
V
GS
= 0
f = 1MHz
0
5
10
15
20
25
0
10
20
30
40
50
60
I
D
, Drain Current (A)
V
DS
, Drain-to-Source Voltage (V)
Figure 5. Gate Charge
Figure 6. Body Diode Forward Voltage
10
2
12
10
8
T
J
= 150ºC
10
1
10
0
V
DD
= 120V
T
J
= 25ºC
6
V
DD
= 640V
10
-1
10
-2
10
-3
4
2
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
10
20
30
40
50
60
70
Q
g
, Total Gate Charge (nC)
V
SD
, Source-to-Drain Voltage (V)
V2.0
3
TPA80R250A, TPP80R250A, TPW80R250A
Wuxi Unigroup Microelectronics Company
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 8. Breakdown voltage vs.
Junction Temperature
Figure 7. On-Resistance vs.
Junction Temperature
1.3
1.2
1.1
1
3
2.5
2
I
D
= 250µA
V
GS
= 10V
I
D
= 7.5A
1.5
1
0.9
0.8
0.5
0
-30
0
30
60
90
120
150
-100
-50
0
50
100
150
200
T
J
, Junction Temperature (
º
C)
T
J
, Junction Temperature (
º
C)
Figure 9. Transient Thermal Impedance
TO-220F
10
1
Figure 9. Transient Thermal Impedance
TO-220,TO-247
10
0
10
0
10
-1
10
-2
10
-3
10
-1
10
-2
10
-3
D = 0.5
D = 0.2
D = 0.1
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
Single Pulse
D = 0.05
D = 0.02
D = 0.01
Single Pulse
10
-4
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
T
p
, Pulse Width (s)
T
p
, Pulse Width (s)
Figure 12. Safe operation area for
TO-220,TO-247
Figure 13. Safe operation area for
TO-220F
10
2
10
1
10
0
10
2
10
1
10
0
10
-1
10
-2
t
p
= 1us
t
p
= 10us
t
p
= 100us
t
p
= 1ms
t
p
= 10ms
DC
t
p
= 1us
t
p
= 10us
t
p
= 100us
t
p
= 1ms
t
p
= 10ms
DC
10
-1
10
-2
10
0
10
1
10
2
10
0
10
1
10
2
10
3
10
3
V
DS
, Drain-Source Voltage(V)
V
DS
, Drain-Source Voltage(V)
V2.0
4
TPA80R250A, TPP80R250A, TPW80R250A
Wuxi Unigroup Microelectronics Company
Figure A
：
Gate Charge Test Circuit and Waveform
Figure B
：
Resistive Switching Test Circuit and Waveform
Figure C
：
Unclamped Inductive Switching Test Circuit and Waveform
V2.0
5
TPA80R250A, TPP80R250A, TPW80R250A
Wuxi Unigroup Microelectronics Company
TO-220F
V2.0
6
TPA80R250A, TPP80R250A, TPW80R250A
Wuxi Unigroup Microelectronics Company
TO-220
V2.0
7
TPA80R250A, TPP80R250A, TPW80R250A
Wuxi Unigroup Microelectronics Company
TO-247
V2.0
8
TPA80R250A, TPP80R250A, TPW80R250A
Wuxi Unigroup Microelectronics Company
Disclaimer
All product specifications and data are subject to change without notice.
For documents and material available from this datasheet, Wuxi Unigroup does not warrant or assume
any legal liability or responsibility for the accuracy, completeness of any product or technology
disclosed hereunder.
No license, express or implied, by estoppels or otherwise, to any intellectual property rights is granted
by this document or by any conduct of Wuxi Unigroup.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining
applications. Customers using or selling Wuxi Unigroup products not expressly indicated for use in
such applications do so entirely at their own risk and agree to fully indemnify Wuxi Unigroup for any
damages arising or resulting from such use or sale.
Wuxi Unigroup disclaims any and all liability arising out of the use or application of any product
described herein or of any information provided herein to the maximum extent permitted by law. The
product specifications do not expand or otherwise modify Wuxi
Unigroup’s
terms and conditions of
purchase, including but not limited to the warranty expressed therein, which apply to these products.
Wuxi Unigroup Microelectronics CO., LTD. strives to supply high-quality high-reliability products.
However, any and all semiconductor products fail with some probability. It is possible that these
probabilistic failures could give rise to accidents or events that could endanger human lives that could
give rise to smoke or fire, or that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures
include but are not limited to protective circuits and error prevention circuits for safe design, redundant
design, and structural design.
In the event that any or all Wuxi Unigroup products (including technical data, services) described or
contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
accordance with the above law.
Information (including circuit diagrams and circuit parameters) herein is for example only. It is not
guaranteed for volume production. Wuxi Unigroup believes information herein is accurate and reliable,
but no guarantees are made or implied regarding its use or any infringements of intellectual property
rights or other rights of third parties.
V2.0
9
