WUXI-UNIGROUP-MICRO-TPB70R950M
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TPB70R950M,TPD70R950M
Wuxi Unigroup Microelectronics Co.,Ltd
700V Super-junction Power MOSFET
Description
700V Super-junction Power MOSFET
Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs
，
designed according to the SJ
principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses device with
highest robustness make especially resonant switching applications more reliable, more efficient, lighter and cooler, designed by
Wuxi Unigroup Microelectronics Company.
Features
Applications
l
l
l
l
Very low FOM RDS(on)
×
Qg
l
Switch Mode Power Supply (SMPS)
l
Uninterruptible Power Supply (UPS)
l
Power Factor Correction (PFC)
l
Charger
100% avalanche tested
Easy to use/drive
RoHS compliant
TO-252
TO-263
Device Marking and Package Information
Device
Package
TO-263
TO-252
Marking
TPB70R950M
TPD70R950M
70R950M
Key Performance Parameters
Parameter
V
DS
@ T
j,max
R
DS(on),max
Q
g,typ
Value
750
0.95
9.6
Unit
V
Ω
nC
A
I
D
4.5
I
D,pulse
13.5
1.05
500
A
E
OSS
@ 400V
Body Diode di
F
/dt
μJ
A/μs
V1.0
1
TPB70R950M,TPD70R950M
Wuxi Unigroup Microelectronics Co.,Ltd
Absolute Maximum Ratings
T
C
= 25ºC, unless otherwise noted
Parameter
Symbol
Value
Unit
T
C
= 25ºC
4.5
Continuous Drain Current
I
D
A
T
C
= 100ºC
2.7
13.5
±
30
50
Pulsed Drain Current
(note1)
I
D,pulse
V
GSS
E
AS
A
V
Gate-Source Voltage
Single Pulse Avalanche Energy
Repetitive Avalanche Energy
Avalanche Current
(note2)
(note2)
mJ
mJ
A
E
AR
0.15
1.0
50
I
AR
MOSFET dv/dt Ruggedness, V
DS
= 0…480V
Power Dissipation For TO-263,TO-252
dv/dt
P
D
V/ns
W
37
Continuous Diode Forward Current
Diode Pulsed Current
I
S
3.8
13.5
A
(note1)
(note3)
(note3)
I
S,pulse
dv/dt
di
f
/dt
Reverse Diode dv/dt
15
V/ns
A/μs
ºC
Maximum Diode Commutation Speed
Operating Junction and Storage Temperature Range
500
T
J
, T
stg
-55~+150
Thermal Resistance For TO-263,TO-252
Parameter
Symbol
R
thJC
Value
3.4
Unit
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
ºC/W
R
thJA
62
V1.0
2
TPB70R950M,TPD70R950M
Wuxi Unigroup Microelectronics Co.,Ltd
Electrical Characteristics
T
J
= 25ºC, unless otherwise noted
Value
Typ.
Parameter
Symbol
Test Conditions
Unit
Min.
Max.
Static Characteristics
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0V, I
D
= 250µA
V
DS
= 700V, V
GS
= 0V, T
J
= 25ºC
V
DS
= 700V, V
GS
= 0V, T
J
= 150ºC
V
GS
=
±
20V
700
—
—
—
—
—
—
—
1
V
Zero Gate Voltage Drain Current
I
DSS
μA
—
100
±
1
4.0
Gate-Source Leakage Current
Gate-Source Threshold Voltage
I
GSS
—
μA
V
V
GS(th)
V
DS
= V
GS
, I
D
= 250µA
2.5
Drain-Source On-State-Resistance
R
DS(on)
R
G
V
GS
= 10V, I
D
= 2A
—
—
0.87
5
0.95
—
Ω
Ω
Gate Resistance
f = 1.0MHz open drain
Dynamic Characteristics
Input Capacitance
C
iss
C
oss
C
rss
Q
g
—
—
—
—
—
—
—
—
—
—
320
18
—
—
—
—
—
—
—
—
—
—
V
GS
= 0V,
V
DS
= 100V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
pF
nC
2.1
9.6
1.9
4.3
54
V
DD
= 520V, I
D
= 4.5A,
V
GS
= 10V
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Q
gs
Q
gd
t
d(on)
t
r
62
V
DD
= 400V, I
D
= 4.5A,
R
G
= 25Ω
ns
t
d(off)
t
f
86
51
Drain-Source Body Diode Characteristics
Body Diode Forward Voltage
Reverse Recovery Time
V
SD
t
rr
T
J
= 25ºC, I
SD
= 2A, V
GS
= 0V
—
—
—
—
0.9
271
3.1
23
1.2
—
V
ns
μC
A
V
R
= 400V, I
F
= 4.5A,
di
F
/dt = 100A/μs
Reverse Recovery Charge
Q
rr
I
rrm
—
Peak Reverse Recovery Current
—
Notes
1. Repetitive
Rating: Pulse width limited by maximum junction temperature
2. I
AS
= 1.0A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25
°
C
3. Identical
low side and high side switch with identical R
G
V1.0
3
TPB70R950M,TPD70R950M
Wuxi Unigroup Microelectronics Co.,Ltd
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 1. Output Characteristics
20V
10V
8V
7V
6V
5.5V
5V
Figure 2. Transfer Characteristics
14
12
10
8
14
12
10
8
V
DS
= 20V
T
J
= 25ºC
4.5V
6
6
T
J
= 150ºC
4
4
2
2
0
0
0
5
10
15
20
0
2
4
6
8
10
V
DS
, Drain-to-Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
Figure 3. On-Resistance vs. Drain Current
Figure 4. Capacitance
2.0
10
4
10
3
10
2
10
1
10
0
V
GS
= 10V
T
J
= 25ºC
V
GS
= 0
f = 1MHz
1.8
1.6
1.4
1.2
1.0
0.8
0.6
C
iss
C
oss
C
rss
0
100
200
300
400
500
600
0
2
4
6
8
I
D
, Drain Current (A)
V
DS
, Drain-to-Source Voltage (V)
Figure 5. Gate Charge
Figure 6. Body Diode Forward Voltage
12
10
8
10
2
10
1
10
0
10
-1
V
DD
= 120V
T
J
= 125ºC
6
T
J
= 25ºC
V
DD
= 520V
4
2
0
0
2
4
6
8
10
0.0
0.5
1.0
1.5
Q
g
, Total Gate Charge (nC)
V
SD
, Source-to-Drain Voltage (V)
V1.0
4
TPB70R950M,TPD70R950M
Wuxi Unigroup Microelectronics Co.,Ltd
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 7. On-Resistance vs.
Junction Temperature
Figure 8. Breakdown voltage vs.
Junction Temperature
1.3
1.2
1.1
1
3
2.5
2
V
GS
= 10V
I
D
= 2A
I
D
= 250uA
1.5
1
0.9
0.8
0.5
0
-30
0
30
60
90
120
150
-50 -25
0
25
50
75 100
125 150
T
J
, Junction Temperature (
º
C)
T
J
, Junction Temperature (
º
C)
Figure 10. Safe Operation Area For
TO-263/TO-252
Figure 9. Transient Thermal Impedance For
TO-263/TO-252
10
1
10
2
10
1
10
0
10
-1
10
-2
10
0
D = 0.5
D = 0.2
t
p
= 1us
t
p
= 10us
t
p
= 100us
t
p
= 1ms
t
p
= 10ms
DC
10
-1
D = 0.1
D = 0.05
D = 0.02
D = 0.01
Single Pulse
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
T
p
, Pulse Width (s)
Figure 11. Typ. Coss Stored Energy
V
DS
, Drain-Source Voltage(V)
2.5
2
1.5
1
0.5
0
0
100
200
300
400
500
600
700
V
DS
, Drain-Source Voltage(V)
V1.0
5
TPB70R950M,TPD70R950M
Wuxi Unigroup Microelectronics Co.,Ltd
Figure A
：
Gate Charge Test Circuit and Waveform
Figure B
：
Resistive Switching Test Circuit and Waveform
Figure C
：
Unclamped Inductive Switching Test Circuit and Waveform
V1.0
6
TPB70R950M,TPD70R950M
Wuxi Unigroup Microelectronics Co.,Ltd
TO-263
（封装厂
I
）
V1.0
7
TPB70R950M,TPD70R950M
Wuxi Unigroup Microelectronics Co.,Ltd
TO-252
（封装厂
H
）
Unit:mm
Unit:mm
Symbol
Min.
Nom
Max.
Symbol
Min.
Nom
Max.
A
A1
A2
b
2.20
0.00
0.97
0.68
5.20
0.43
5.98
2.30
–
2.38
0.20
1.17
0.90
546
e
H
2.286 BSC
9.40
1.38
10.10
10.50
1.75
1.07
0.78
5.33
0.53
6.10
5.30 REF
6.60
–
L
1.50
L1
L2
L3
L4
L5
θ
2.90 REF
b3
c
0.51 BSC
0.61
6.22
0.88
0.50
1.65
0
°
–
1.28
1.00
1.95
8
°
D
–
1.80
–
D1
E
6.40
4.63
6.73
–
E1
V1.0
8
TPB70R950M,TPD70R950M
Wuxi Unigroup Microelectronics Co.,Ltd
Disclaimer
All product specifications and data are subject to change without notice.
For documents and material available from this datasheet, Wuxi Unigroup does not warrant or assume
any legal liability or responsibility for the accuracy, completeness of any product or technology
disclosed hereunder.
No license, express or implied, by estoppels or otherwise, to any intellectual property rights is granted
by this document or by any conduct of Wuxi Unigroup.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining
applications. Customers using or selling Wuxi Unigroup products not expressly indicated for use in
such applications do so entirely at their own risk and agree to fully indemnify Wuxi Unigroup for any
damages arising or resulting from such use or sale.
Wuxi Unigroup disclaims any and all liability arising out of the use or application of any product
described herein or of any information provided herein to the maximum extent permitted by law. The
product specifications do not expand or otherwise modify Wuxi Unigroup’s terms and conditions of
purchase, including but not limited to the warranty expressed therein, which apply to these products.
Wuxi Unigroup Microelectronics CO., LTD. strives to supply high-quality high-reliability products.
However, any and all semiconductor products fail with some probability. It is possible that these
probabilistic failures could give rise to accidents or events that could endanger human lives that could
give rise to smoke or fire, or that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures
include but are not limited to protective circuits and error prevention circuits for safe design, redundant
design, and structural design.
In the event that any or all Wuxi Unigroup products (including technical data, services) described or
contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
accordance with the above law.
Information (including circuit diagrams and circuit parameters) herein is for example only. It is not
guaranteed for volume production. Wuxi Unigroup believes information herein is accurate and reliable,
but no guarantees are made or implied regarding its use or any infringements of intellectual property
rights or other rights of third parties.
V1.0
9
