WUXI-UNIGROUP-MICRO-TPB80R180M
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TPA80R180M,TPB80R180M
Wuxi Unigroup Microelectronics Co.,Ltd
800V Super-junction Power MOSFET
Description
800V Super-junction Power MOSFET
Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs
，
designed according to the SJ
principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses device with
highest robustness make especially resonant switching applications more reliable, more efficient, lighter and cooler, designed by
Wuxi Unigroup Microelectronics Company.
Features
Applications
l
Very low FOM R
DS(on)
×
Q
g
l
100% avalanche tested
l
Easy to use/drive
l
RoHS compliant
l
Switch Mode Power Supply (SMPS)
l
Uninterruptible Power Supply (UPS)
l
Power Factor Correction (PFC)
l
Low Power Chargers and Adapters
TO-220F
TO-263
Device Marking and Package Information
Device
Package
TO-220F
TO-263
Marking
80R180M
80R180M
TPA80R180M
TPB80R180M
Key Performance Parameters
Parameter
V
DS
@ T
j,max
R
DS(on),max
Q
g,typ
Value
850
0.18
54.9
23
Unit
V
Ω
nC
A
I
D
I
D,pulse
69
A
E
OSS
@ 400V
Body Diode di
F
/dt
4.95
500
μJ
A/μs
V1.0
1
TPA80R180M,TPB80R180M
Wuxi Unigroup Microelectronics Co.,Ltd
Absolute Maximum Ratings
T
C
= 25ºC, unless otherwise noted
Parameter
Symbol
Values
23
Unit
T
C
= 25ºC
Continuous Drain Current
I
D
A
T
C
= 100ºC
13.8
69
Pulsed Drain Current
(note1)
I
D,pulse
V
GSS
E
AS
A
V
Gate-Source Voltage
±
30V
1125
27.8
4.6
Single Pulse Avalanche Energy
Repetitive Avalanche Energy
Avalanche Current
(note2)
(note2)
mJ
mJ
A
E
AR
I
AR
MOSFET dv/dt Ruggedness, V
DS
= 0…480V
Power Dissipation For TO-220F
dv/dt
50
V/ns
44.6
P
D
W
A
Power Dissipation For TO-263
215
Continuous Diode Forward Current
Diode Pulsed Current
I
S
20
69
(note1)
(note3)
(note3)
I
S,pulse
dv/dt
di
f
/dt
Reverse Diode dv/dt
15
V/ns
A/μs
ºC
Maximum Diode Commutation Speed
Operating Junction and Storage Temperature Range
500
T
J
, T
stg
-55~+150
Thermal Resistance For TO-220F
Parameter
Symbol
R
thJC
Value
2.8
Unit
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
ºC/W
R
thJA
62.5
Thermal Resistance For TO-263
Parameter
Symbol
R
thJC
Value
0.59
Unit
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
ºC/W
R
thJA
62.5
V1.0
2
TPA80R180M,TPB80R180M
Wuxi Unigroup Microelectronics Co.,Ltd
Electrical Characteristics
T
J
= 25ºC, unless otherwise noted
Value
Typ.
Parameter
Symbol
Test Conditions
Unit
Min.
Max.
Static Characteristics
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0V, I
D
= 250µA
800
—
—
—
—
1
V
V
DS
= 800V,
V
GS
= 0V, T
J
= 25ºC
V
DS
= 800V,
Zero Gate Voltage Drain Current
I
DSS
μA
—
—
—
—
100
±
100
4.5
V
GS
= 0V, T
J
= 150ºC
Gate-Source Leakage Current
Gate-Source Threshold Voltage
Drain-Source On-State-Resistance
Gate Resistance
I
GSS
V
GS(th)
R
DS(on)
R
G
V
GS
=
±
30V
nA
V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V,I
D
= 11.5A
f = 1.0MHz open drain
2.5
—
—
0.16
1.5
0.18
—
Ω
—
Ω
Dynamic Characteristics
Input Capacitance
C
iss
C
oss
C
rss
Q
g
—
—
—
—
—
—
—
—
—
—
2468.4
56.81
5.2
—
—
—
—
—
—
—
—
—
—
V
GS
= 0V,
V
DS
= 100V
f = 1.0MHz
Output Capacitance
pF
nC
Reverse Transfer Capacitance
Total Gate Charge
54.9
V
DD
= 640V,
I
D
= 23A,
V
GS
= 10V
Gate-Source Charge
Gate-Drain Charge
Q
gs
Q
gd
t
d(on)
t
r
10.4
21.5
Turn-on Delay Time
68.45
76.9
Turn-on Rise Time
V
DD
= 400V
I
D
= 23A
R
G
= 25Ω
ns
Turn-off Delay Time
t
d(off)
t
f
180.2
58.35
Turn-off Fall Time
Drain-Source Body Diode Characteristics
Body Diode Forward Voltage
Reverse Recovery Time
V
SD
t
rr
T
J
= 25ºC, I
SD
= 12A,V
GS
= 0V
—
—
—
—
0.9
1.2
—
V
ns
μC
A
405.4
4.633
22.83
V
R
= 400
I
F
= 20A,
di
F
/dt =
100A/μs
Reverse Recovery Charge
Q
rr
I
rrm
—
Peak Reverse Recovery Current
—
Notes
1. Repetitive
Rating: Pulse width limited by maximum junction temperature
2. I
D
= 10A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25
°
C
3. Identical
low side and high side switch with identical R
G
V1.0
3
TPA80R180M,TPB80R180M
Wuxi Unigroup Microelectronics Co.,Ltd
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
60
50
40
30
20
10
0
60
50
40
30
20
10
0
20V
10V
8V
7V
6V
5.5V
5V
4.5V
0
2
4
6
8
10
0
5
10
15
20
V
DS
, Drain-to-Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
Figure 3. On-Resistance vs. Drain Current
Figure 4. Capacitance
10
5
0.180
0.175
0.170
0.165
0.160
0.155
0.150
0.145
0.140
0.135
V
GS
= 10V
T
J
= 25
º
C
V
GS
= 0
f = 1MHz
10
4
10
3
C
iss
C
oss
C
rss
10
2
10
1
10
0
0
100 200 300 400 500 600 700 800
0
5
10
15
20
25
I
D
, Drain Current (A)
V
DS
, Drain-to-Source Voltage (V)
Figure 5. Gate Charge
Figure 6. Body Diode Forward Voltage
12
10
8
10
2
10
1
V
DD
= 120V
T
J
= 150
º
C
V
DD
= 640V
6
T
J
= 25
º
C
10
0
4
2
10
-1
0
0
10
20
30
40
50
60
0.0
0.5
1.0
1.5
Q
g
, Total Gate Charge (nC)
V
SD
, Source-to-Drain Voltage (V)
V1.0
4
TPA80R180M,TPB80R180M
Wuxi Unigroup Microelectronics Co.,Ltd
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 8. Breakdown Voltage vs.
Junction Temperature
Figure 7. On-Resistance vs. Temperature
1.3
1.2
1.1
1.0
0.9
0.8
3.0
2.5
2.0
1.5
1.0
0.5
0.0
V
GS
= 10V
I
D
= 2A
I
D
= 250µA
-50
-25
0
25
50
75
100 125 150
-50 -25
0
25
50
75
100 125 150
T
J
, Junction Temperature (
º
C)
T
J
, Junction Temperature (
º
C)
Figure 9. Transient Thermal Impedance For
TO-220F
Figure 10. Safe Operation Area For
TO-220F
5
10
2
10
0
10
1
10
0
10
-1
10
-2
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
10
-1
10
-2
10
-3
t
p
= 1us
t
p
= 10us
t
p
= 100us
t
p
= 1ms
t
p
= 10ms
DC
Single Pulse
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
10
3
V
DS
, Drain-Source Voltage(V)
T
p
, Pulse Width (s)
Figure 11. Transient Thermal Impedance
For TO-263
Figure 12. Safe Operation Area For
TO-263
10
0
10
2
10
1
10
0
10
-1
10
-2
10
-1
D = 0.5
D = 0.2
D = 0.1
t
p
= 1us
t
p
= 10us
t
p
= 100us
t
p
= 1ms
t
p
= 10ms
DC
D = 0.05
D = 0.02
D = 0.01
Single Pulse
10
-2
10
-3
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
V
DS
, Drain-Source Voltage(V)
T
p
, Pulse Width (s)
V1.0
5
TPA80R180M,TPB80R180M
Wuxi Unigroup Microelectronics Co.,Ltd
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 13. Typ. Coss Stored Energy
16
14
12
10
8
6
4
2
0
0
100 200 300 400 500 600 700 800
V
DS
, Drain-Source Voltage(V)
V1.0
6
TPA80R180M,TPB80R180M
Wuxi Unigroup Microelectronics Co.,Ltd
Figure A
：
Gate Charge Test Circuit and Waveform
Figure B
：
Resistive Switching Test Circuit and Waveform
Figure C
：
Unclamped Inductive Switching Test Circuit and Waveform
V1.0
7
TPA80R180M,TPB80R180M
Wuxi Unigroup Microelectronics Co.,Ltd
TO-220F
Unit:mm
Unit:mm
Symbol
Min.
Nom
Max.
Symbol
Min.
Nom
Max.
E
A
9.96
4.50
2.34
0.30
2.56
0.40
1.20
15.57
10.16
4.70
10.36
4.90
2.74
0.60
2.96
0.65
1.35
16.17
e
L
2.54BSC
12.98
3.03
12.68
2.93
3.03
3.15
3.15
1.25
1.18
0.70
13.28
3.13
3.38
3.65
3.45
1.55
1.43
0.95
A1
A2
A4
c
2.54
L1
0.45
ΦP
ΦP3
F3
G3
b1
3.18
2.76
3.45
0.50
3.30
c1
D
1.30
1.35
15.87
6.70REF
1.28
H1
b2
0.80
V1.0
8
TPA80R180M,TPB80R180M
Wuxi Unigroup Microelectronics Co.,Ltd
Disclaimer
All product specifications and data are subject to change without notice.
For documents and material available from this datasheet, Wuxi Unigroup does not warrant or assume
any legal liability or responsibility for the accuracy, completeness of any product or technology
disclosed hereunder.
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by this document or by any conduct of Wuxi Unigroup.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining
applications. Customers using or selling Wuxi Unigroup products not expressly indicated for use in
such applications do so entirely at their own risk and agree to fully indemnify Wuxi Unigroup for any
damages arising or resulting from such use or sale.
Wuxi Unigroup disclaims any and all liability arising out of the use or application of any product
described herein or of any information provided herein to the maximum extent permitted by law. The
product specifications do not expand or otherwise modify Wuxi Unigroup’s terms and conditions of
purchase, including but not limited to the warranty expressed therein, which apply to these products.
Wuxi Unigroup Microelectronics CO., LTD. strives to supply high-quality high-reliability products.
However, any and all semiconductor products fail with some probability. It is possible that these
probabilistic failures could give rise to accidents or events that could endanger human lives that could
give rise to smoke or fire, or that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures
include but are not limited to protective circuits and error prevention circuits for safe design, redundant
design, and structural design.
In the event that any or all Wuxi Unigroup products (including technical data, services) described or
contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
accordance with the above law.
Information (including circuit diagrams and circuit parameters) herein is for example only. It is not
guaranteed for volume production. Wuxi Unigroup believes information herein is accurate and reliable,
but no guarantees are made or implied regarding its use or any infringements of intellectual property
rights or other rights of third parties.
V1.0
10
