WUXI-UNIGROUP-MICRO-TPW60R040MFD
| Part # | WUXI-UNIGROUP-MICRO-TPW60R040MFD |
Download  | WUXI-UNIGROUP-MICRO-TPW60R040MFD |
TPW60R040MFD
Wuxi Unigroup Microelectronics Co.,Ltd
600V Super-junction Power MOSFET
DESCRIPTION
600V Super-junction Power MOSFET
Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFE
T
s
，
designed according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an
extremely fast and robust body diode. Also provide an extremely low switching, communication
and conduction losses device with highest robustness make especially resonant switching
applications more reliable, more efficient, lighter and cooler, also fits the industrial grade
applications,like AC-DC SMPS requirements for PFC, AC/DC power conversion, designed by
Wuxi Unigroup Microelectronics Company.
FEATURES
APPLICATIONS
l
Ultra-fast body diode
l
Very low FOM R
DS(on)
×
Q
g
l
Easy to use/drive
l
100% avalanche tested
l
RoHS compliant
l
Switch Mode Power Supply (SMPS)
l
Uninterruptible Power Supply (UPS)
l
Power Factor Correction (PFC)
l
LLC Half-bridge
l
Charger
Device Marking and Package Information
Device
Package
Marking
TPW60R040MFD
TO-247
60R040MFD
Key Performance Parameters
Parameter
Value
600
0.04
72
Unit
V
V
DS
@ T
j,max
R
DS(on),max
Ω
I
D
A
Q
g,typ
I
DM
t
rr
169
216
225
1.4
nC
A
ns
μC
A
Q
rr
I
rrm
12.5
V1.0
1
TPW60R040MFD
Wuxi Unigroup Microelectronics Co.,Ltd
Absolute Maximum Ratings
T
C
= 25ºC, unless otherwise noted
Parameter
Symbol
Value
600
72
Unit
Drain-Source Voltage (V
GS
= 0V)
V
DSS
V
T
C
= 25ºC
Continuous Drain Current
I
D
A
TC = 100ºC
43.2
216
±
30
Pulsed Drain Current
(note1)
I
DM
V
GSS
E
AS
E
AR
I
AR
A
V
Gate-Source Voltage
Single Pulse Avalanche Energy
Repetitive Avalanche Energy
Avalanche Current
(note2)
(note2)
2185
3.31
13.7
50
mJ
mJ
A
MOSFET dv/dt ruggedness, V
DS
= 0…480V
Power Dissipation
dv/dt
P
D
V/ns
W
500
Continuous Body Diode Current
Pulsed Diode Forward Current
Reverse diode dv/dt
I
S
72
216
A
(note1)
(note3)
(note3)
I
SM
dv/dt
di
f
/dt
T
J
, T
stg
50
V/ns
A/us
ºC
Maximum diode commutation speed
900
Operating Junction and Storage Temperature Range
-55~+150
Thermal Resistance
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
R
thJC
R
thJA
0.25
62
ºC/W
V1.0
2
TPW60R040MFD
Wuxi Unigroup Microelectronics Co.,Ltd
Specifications
T
J
= 25ºC, unless otherwise noted
Value
Parameter
Symbol
Test Conditions
Unit
Min.
Typ.
Max.
Static
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
V
(BR)DSS
I
DSS
V
GS
= 0V, I
D
= 250µA
V
DS
= 600V, V
GS
= 0V, T
J
= 25ºC
V
GS
=
±
30V
600
—
—
—
—
—
—
10
V
μA
nA
V
I
GSS
—
±
100
5
Gate-Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250µA
3
Drain-Source On-Resistance
R
DS(on)
R
G
V
GS
= 10V, I
D
= 36A
—
—
0.035
0.3
0.04
—
Ω
Ω
Gate resistance
f = 1.0MHz open drain
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
C
iss
C
oss
C
rss
Q
g
—
—
—
—
—
—
—
—
—
—
8043
283
3.6
169
50
—
—
—
—
—
—
—
—
—
—
V
GS
= 0V,
V
DS
= 100V,
f = 1.0MHz
pF
nC
V
DD
= 520V, I
D
= 50A,
V
GS
= 10V
Q
gs
Q
gd
t
d(on)
t
r
65
91
90
V
DD
= 400V, I
D
= 50A,
R
G
= 25Ω
ns
t
d(off)
t
f
583
133
Drain-Source Body Diode Characteristics
Body Diode Voltage
V
SD
T
J
= 25ºC, I
SD
= 36A, V
GS
= 0V
—
1.0
1.5
V
Reverse Recovery Time
t
rr
—
—
—
225
1.4
—
—
—
ns
μC
A
V
R
= 400V, I
F
= 50A,
di
F
/dt = 100A/μs
Reverse Recovery Charge
Peak Reverse Recovery Current
Q
rr
I
rrm
12.5
Notes
1. Repetitive
Rating: Pulse width limited by maximum junction temperature
2. I
AS
= 13.7A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25
°
C
3. Identical
low side and high side switch with identical R
G
V1.0
3
TPW60R040MFD
Wuxi Unigroup Microelectronics Co.,Ltd
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
300
250
200
150
100
50
300
250
200
150
100
50
V
DS
= 20V
20V
10V
8V
7V
6V
T
J
= 25ºC
5.5V
5V
T
J
= 150ºC
0
0
0
5
10
15
20
0
2
4
6
8
10
V
DS
, Drain-to-Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
Figure 3. On-Resistance vs. Drain Current
Figure 4. Capacitance
0.06
0.05
0.04
0.03
0.02
10
5
V
GS
= 0
f = 1MHz
V
GS
= 10V
T
J
= 25ºC
10
4
10
3
10
2
10
1
10
0
C
iss
C
oss
C
rss
500
0
10
20
30
40
50
60
0
100
200
300
400
600
I
D
, Drain Current (A)
V
DS
, Drain-to-Source Voltage (V)
Figure 5. Gate Charge
Figure 6. Body Diode Forward Voltage
12
10
8
10
2
10
1
10
0
T
J
= 125ºC
V
DD
= 120V
V
DD
= 480V
6
T
J
= 25ºC
4
2
10
-1
0
0
50
100
150
200
0.0
0.5
1.0
1.5
Q
g
, Total Gate Charge (nC)
V
SD
, Source-to-Drain Voltage (V)
V1.0
4
TPW60R040MFD
Wuxi Unigroup Microelectronics Co.,Ltd
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 7. On-Resistance vs.
Junction Temperature
Figure 8. Breakdown voltage vs.
Junction Temperature
1.3
1.2
1.1
1
3
2.5
2
V
GS
= 10V
I
D
= 36A
I
D
= 250µA
1.5
1
0.9
0.5
0.8
0
-30
0
30
60
90
120
150
-50
0
50
100
150
T
J
, Junction Temperature (
º
C)
T
J
, Junction Temperature (
º
C)
Figure 10. Safe operation area for
TO-247
Figure9 . Transient Thermal Impedance for
TO-247
10
3
10
2
10
1
10
0
10
-1
10
0
10
-1
D = 0.5
D = 0.2
D = 0.1
t
p
= 1us
t
p
= 10us
t
p
= 100us
t
p
= 1ms
t
p
= 10ms
DC
10
-2
D = 0.05
D = 0.02
D = 0.01
Single Pulse
10
-3
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
0
10
1
10
2
10
3
V
DS
, Drain-Source Voltage(V)
T
p
, Pulse Width (s)
V1.0
5
TPW60R040MFD
Wuxi Unigroup Microelectronics Co.,Ltd
Figure A
：
Gate Charge Test Circuit and Waveform
Figure B
：
Resistive Switching Test Circuit and Waveform
Figure C
：
Unclamped Inductive Switching Test Circuit and Waveform
V1.0
6
TPW60R040MFD
Wuxi Unigroup Microelectronics Co.,Ltd
TO-247
Unit:mm
Unit:mm
Symbol
Min.
Nom
Max.
Symbol
Min.
Nom.
Max.
A
A1
A2
b
4.80
2.21
1.85
1.11
1.91
2.91
0.51
20.70
16.25
5.00
2.41
2.00
1.21
2.01
3.01
0.61
21.00
16.55
5.20
2.61
2.15
1.36
2.21
3.21
0.75
21.30
16.85
E
E1
E2
E3
e
15.50
13.00
4.80
15.80
13.30
5.00
16.10
13.60
5.20
2.30
2.50
2.70
b2
b4
c
5.44BSC
19.92
–
L
19.62
20.22
4.30
3.80
7.30
L1
ФP
ФP1
S
–
3.40
–
D
3.60
D1
–
6.15BSC
V1.0
7
TPW60R040MFD
Wuxi Unigroup Microelectronics Co.,Ltd
Disclaimer
All product specifications and data are subject to change without notice.
For documents and material available from this datasheet, Wuxi Unigroup does not warrant or assume
any legal liability or responsibility for the accuracy, completeness of any product or technology
disclosed hereunder.
No license, express or implied, by estoppels or otherwise, to any intellectual property rights is granted
by this document or by any conduct of Wuxi Unigroup.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining
applications. Customers using or selling Wuxi Unigroup products not expressly indicated for use in
such applications do so entirely at their own risk and agree to fully indemnify Wuxi Unigroup for any
damages arising or resulting from such use or sale.
Wuxi Unigroup disclaims any and all liability arising out of the use or application of any product
described herein or of any information provided herein to the maximum extent permitted by law. The
product specifications do not expand or otherwise modify Wuxi Unigroup’s terms and conditions of
purchase, including but not limited to the warranty expressed therein, which apply to these products.
Wuxi Unigroup Microelectronics CO., LTD. strives to supply high-quality high-reliability products.
However, any and all semiconductor products fail with some probability. It is possible that these
probabilistic failures could give rise to accidents or events that could endanger human lives that could
give rise to smoke or fire, or that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures
include but are not limited to protective circuits and error prevention circuits for safe design, redundant
design, and structural design.
In the event that any or all Wuxi Unigroup products (including technical data, services) described or
contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
accordance with the above law.
Information (including circuit diagrams and circuit parameters) herein is for example only. It is not
guaranteed for volume production. Wuxi Unigroup believes information herein is accurate and reliable,
but no guarantees are made or implied regarding its use or any infringements of intellectual property
rights or other rights of third parties.
V1.0
8
