WUXI-UNIGROUP-MICRO-TTB115N08A
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TTB115N08A,TTP115N08A
Wuxi Unigroup Microelectronics CO.,LTD.
80V N-Channel Trench MOSFET
Product Summary
Features
Trench Power Technology
Low R
DS(ON)
V
DS
80V
R
DS(ON)
(at V
GS
=10V)
I
D
(at V
GS
=10V)
< 7.5m
Ω
115A
Low Gate Charge
Optimized for Fast-switching Applications
Applications
Synchronous Rectification
in DC/DC and AC/DC Converters
Isolated DC/DC Converters in Telecom and Industrial
100% UIS Tested
Package
Marking
115N08A
115N08A
TTB115N08A
TTP115N08A
TO-263
TO-220
Absolute Maximum Ratings
T
C
= 25ºC, unless otherwise noted
Parameter
Symbol
Value
Unit
Drain-Source Voltage (V
GS
= 0V)
V
DSS
80
115
80
V
T
C
= 25ºC
Continuous Drain Current
I
D
A
T
C
= 100ºC
Pulsed Drain Current
Gate-Source Voltage
(note1)
(note2)
I
DM
460
±
20
A
V
V
GSS
Single Pulse Avalanche Energy
Avalanche Current
E
AS
I
As
390
mJ
51
A
W
W
T
C
= 25ºC
200
100
Power Dissipation
(note3)
P
D
T
C
= 100ºC
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55~+175
ºC
Thermal Resistance
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
R
thJC
R
thJA
0.75
62.5
ºC /W
V1.0
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TTB115N08A,TTP115N08A
Wuxi Unigroup Microelectronics CO.,LTD.
Specifications
T
J
= 25ºC
, unless otherwise noted
Value
Parameter
Symbol
Test Conditions
Unit
Min.
Typ.
Max.
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0V, I
D
= 250µA
V
DS
= 82V, V
GS
= 0V, T
J
= 25ºC
V
DS
= 82V, V
GS
= 0V, T
J
= 100ºC
V
GS
=
±
20V
82
—
—
—
—
1
V
Zero Gate Voltage Drain Current
I
DSS
μA
—
—
25
Gate-Source Leakage
Gate-Source Threshold Voltage
Drain-Source On-Resistance
Forward Transconductance
Dynamic
I
GSS
V
GS(th)
R
DS(on)
g
fs
—
—
±
100
4
nA
V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 20A
2
3
—
6.4
—
7.5
—
mΩ
S
V
DS
= 5V, I
D
= 20A
80
Input Capacitance
C
iss
C
oss
C
rss
Q
g
—
—
—
—
—
—
—
—
—
—
6650
302
261
112
35
—
—
—
—
—
—
—
—
—
—
V
GS
= 0V,
V
DS
= 40V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
pF
nC
V
DD
= 40V, I
D
= 20A,
V
GS
= 10V
Gate-Source Charge
Gate-Drain Charge
Q
gs
Q
gd
t
d(on)
t
r
23
Turn-on Delay Time
Turn-on Rise Time
24
19
V
DD
= 40
V
,
I
D
= 20A,
ns
R
G
= 2.5
Ω
Turn-off Delay Time
Turn-off Fall Time
t
d(off)
t
f
70
30
Drain-Source Body Diode Characteristics
Continuous Body Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
I
S
I
SM
V
SD
t
rr
—
—
—
—
—
—
—
115
460
1.2
—
T
C
= 25ºC
A
T
J
= 25ºC, I
SD
= 20A, V
GS
= 0V
—
V
Reverse Recovery Time
37
58
ns
nC
I
F
= 20A,
di
F
/dt = 100A/
μs
Reverse Recovery Charge
Q
rr
—
Notes
1. Repetitive
Rating: Pulse Width limited by maximum junction temperature
2. I
AS
= 51A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25
°
C
3. The
power dissipation PD is based on TJ(MAX)=175
°
C, using junction-to-case thermal resistance.
V1.0
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TTB115N08A,TTP115N08A
Wuxi Unigroup Microelectronics CO.,LTD.
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
120
100
80
60
40
20
0
120
100
80
60
40
20
0
V
DS
= 10V
10V
8V
6V
5V
4.5V
4V
T
J
= 25
º
C
T
J
= 150
º
C
0
1
2
3
4
5
6
0
1
2
3
4
5
V
DS
, Drain-to-Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
Figure 3. On-Resistance vs. Drain Current
Figure 4. Capacitance
10
10
5
10
4
V
GS
= 10V
T
J
= 25
º
C
V
GS
= 0
f = 1MHz
C
iss
9
8
7
6
5
4
10
3
10
2
10
1
C
oss
C
rss
0
20
40
60
0
20
40
60
80
I
D
, Drain Current (A)
V
DS
, Drain-to-Source Voltage (V)
Figure 5. Gate Charge
Figure 6. Body Diode Forward Voltage
10
2
10
1
12
10
8
V
DS
= 40V
I
D
= 20A
T
J
= 125
º
C
V
GS
= 0
10
0
10
-1
10
-2
10
-3
10
-4
10
-5
6
T
J
= 25
º
C
4
2
0
0
20
40
60
80
100
120
0
0.2
0.4
0.6
0.8
1
1.2
Q
g
, Total Gate Charge (nC)
V
SD
, Source-to-Drain Voltage (V)
V1.0
3
TTB115N08A,TTP115N08A
Wuxi Unigroup Microelectronics CO.,LTD.
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 7. On-Resistance vs. Temperature
Figure 8. Threshold Voltage vs. Temperature
2.5
2
1
V
GS
= 10V
I
D
= 30A
I
D
= 250µA
0.5
1.5
1
0
-0.5
-1
0.5
0
-1.5
-50
0
50
100
150
-50
0
50
100
150
T
J
, Junction Temperature (
º
C)
T
J
, Junction Temperature (
º
C)
Figure 9. Transient Thermal Impedance
Figure 10. Safe operation area for
10
1
10
3
10
2
10
1
10
0
10
-1
10
-2
10
0
10
-1
10
-2
D = 0.5
D = 0.2
D = 0.1
t
p
= 10us
t
p
= 100us
t
p
= 1ms
t
p
= 10ms
DC
D = 0.05
D = 0.02
D = 0.01
Single Pulse
10
-3
10
1
10
2
10
3
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
-6
V
DS
, Drain-Source Voltage(V)
T
p
, Pulse Width (s)
V1.0
4
TTB115N08A,TTP115N08A
Wuxi Unigroup Microelectronics CO.,LTD.
Figure A
：
Gate Charge Test Circuit and Waveform
Figure B
：
Resistive Switching Test Circuit and Waveform
Figure C
：
Unclamped Inductive Switching Test Circuit and Waveform
V1.0
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TTB115N08A,TTP115N08A
Wuxi Unigroup Microelectronics CO.,LTD.
Disclaimer
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any legal liability or responsibility for the accuracy, completeness of any product or technology
disclosed hereunder.
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by this document or by any conduct of Wuxi Unigroup.
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Wuxi Unigroup disclaims any and all liability arising out of the use or application of any product
described herein or of any information provided herein to the maximum extent permitted by law. The
product specifications do not expand or otherwise modify Wuxi
Unigroup’s
terms and conditions of
purchase, including but not limited to the warranty expressed therein, which apply to these products.
Wuxi Unigroup Microelectronics CO., LTD. strives to supply high-quality high-reliability products.
However, any and all semiconductor products fail with some probability. It is possible that these
probabilistic failures could give rise to accidents or events that could endanger human lives that could
give rise to smoke or fire, or that could cause damage to other property. When designing equipment,
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Information (including circuit diagrams and circuit parameters) herein is for example only. It is not
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but no guarantees are made or implied regarding its use or any infringements of intellectual property
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