WUXI-UNIGROUP-MICRO-TTB85N08A
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TTB85N08A,TTP85N08A
Wuxi Unigroup Microelectronics CO.,LTD.
85V N-Channel Trench MOSFET(Preliminary)
Product Summary
General Description
Trench Power Technology
Low R
DS(ON)
V
DS
85V
85A
I
D
(at V
GS
=10V)
Low Gate Charge
Optimized for fast-switching Applications
R
DS(ON)
(at V
GS
=10V)
< 9m
Ω
Applications
100% UIS Tested
Synchronous Rectification
in DC/DC and AC/DC Converters
Isolated DC/DC Converters in Telecom and Industrial
TO-263
TO-220
Package
TO-263
TO-220
Form
Tape & Reel
Tube
Marking
85N08A
85N08A
TTB85N08A
TTP85N08A
Absolute Maximum Ratings (T
A
=25ºC unless otherwise noted)
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
V
DS
V
GS
85
V
V
±
20
85
T
C
= 25ºC
B
Continuous Drain Current
I
D
A
T
C
= 100ºC
55
A
Pulsed Drain Current
I
DM
I
AS
255
40
A
A
A
Avalanche Current
A
Single Pulse Avalanche Energy
L =0.3mH
E
AS
240
mJ
T
C
= 25ºC
160
78
W
W
C
Power Dissipation
P
D
T
C
= 100ºC
Operating Junction and Storage Temperature Range
T
J
, T
SGT
-55 to
175
ºC
Thermal Resistance
Parameter
Symbol
Maximum
Units
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Steady-State
Steady-State
R
thJC
R
thJA
0.95
100
ºC /W
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TTB85N08A,TTP85N08A
Wuxi Unigroup Microelectronics CO.,LTD.
Electrical Characteristics(T
J
=25ºC unless otherwise noted)
Value
Typ
Symbol
Parameter
Conditions
Units
Min
Max
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
D
= 250µA,V
GS
= 0V
V
DS
= 85V, V
GS
= 0V
85
—
—
—
—
1
V
T
J
=25ºC
I
DSS
Zero Gate Voltage Drain Current
μA
T
J
=100ºC
—
—
25
±
100
4
I
GSS
Gate-Body Leakage
Current
Gate Threshold
Voltage
V
DS
= 0V, V
GS
=
±
20V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 30A
V
DS
= 5V, I
D
= 20A
—
—
nA
V
V
GS(th)
R
DS(ON)
g
FS
2
3
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
—
8.4
—
9
mΩ
S
30
—
—
V
SD
I
S
= 20A, V
GS
= 0V
—
1
V
B
I
S
Maximum Body-Diode Continuous Current
—
—
85
A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
Input Capacitance
—
—
—
5400
245
—
—
—
Output Capacitance
V
GS
=0V, V
DS
= 40V, f =1MH
Z
pF
Reverse Transfer Capacitance
204
SWITCHING PARAMETERS
Q
g
(10V)
Q
gs
Q
gd
t
D(on)
t
r
Total Gate Charge
—
—
—
—
—
—
—
—
—
92
27
21
24
19
70
30
37
58
—
—
—
—
—
—
—
—
—
Gate Source Charge
V
GS
=10V,V
DS
= 40V, I
D
= 20A
nC
ns
Gate Drain Charge
Turn-On Delay Time
Turn-On Rise Time
V
GS
=10V,V
DS
= 40
V
,
I
D
=20A,
R
G
=2.5
Ω
T
D(off)
t
f
Turn-Off Delay Time
Turn-Off Fall Time
t
rr
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
I
F
=20A, di/dt =100A/
μs
Q
rr
nC
A. Single
pulse width limited by maximum junction temperature.
B. The
maximum current rating is package limited.
C. The
power dissipation P
D
is based on T
J(MAX)
=175ºC , using junction-to-case thermal resistance, and is more useful in setting
the upper dissipation limit for cases where additional heatsinking is used.
V1.0
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TTB85N08A,TTP85N08A
Wuxi Unigroup Microelectronics CO.,LTD.
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
120
100
80
60
40
20
0
120
100
80
60
40
20
0
10V
8V
6V
5V
4.5V
4V
V
DS
= 10V
T
J
= 150
º
C
T
J
= 25
º
C
0
1
2
3
4
5
6
0
1
2
3
4
5
V
DS
(Volts)
V
GS
(Volts)
Figure 1: On-Region Characteristics
Figure 2: Transfer Characteristics
10
5
10
4
10
9
V
GS
= 0
f = 1MHz
V
GS
= 10V
T
J
= 25
º
C
C
iss
8
10
3
10
2
7
C
oss
C
rss
6
0
10
20
30
40
50
60
70
0
5
10
15
20
25
30
I
D
(A)
V
DS
(Volts)
Figure 3: On-Resistance vs. Drain Current
Figure 4: Capacitance Characteristics
10
2
12
10
8
V
DS
= 40V
I
D
= 20A
T
J
= 125
º
C
10
1
6
10
0
T
J
= 25
º
C
4
2
10
-1
0
0
20
40
60
80
100
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Q
g
(nC)
V
SD
(Volts)
Figure 5: Gate Charge Characteristics
Figure 6: Body Diode Forward Voltage
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TTB85N08A,TTP85N08A
Wuxi Unigroup Microelectronics CO.,LTD.
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
2.5
2.0
1.5
1.0
0.5
0.0
1.0
0.5
V
GS
= 10V
I
D
= 30A
I
D
= 250µA
0.0
-0.5
-1.0
-1.5
-50
0
50
100
150
-50
0
50
100
150
Temperature(ºC)
Temperature(ºC)
Figure 7: On-Resistance vs. Junction Temperature
Figure 8: Vgs(th)
vs. Junction Temperature
10
1
10
3
10
2
10
0
10
-1
10
1
10
0
10
-1
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
t
p
= 10us
t
p
= 100us
t
p
= 1ms
t
p
= 10ms
DC
10
-2
D = 0.01
Single Pulse
10
-3
10
1
10
2
10
3
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
-6
10
-1
Pulse Width (s)
V
DS
(Volts)
Figure 9: Normalized Transient
Thermal Resistance
Figure 10: Safe Operating Area
V1.0
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TTB85N08A,TTP85N08A
Wuxi Unigroup Microelectronics CO.,LTD.
Figure A
：
Gate Charge Test Circuit and Waveform
Figure B
：
Resistive Switching Test Circuit and Waveform
Figure C
：
Unclamped Inductive Switching Test Circuit and Waveform
V1.0
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TTB85N08A,TTP85N08A
Wuxi Unigroup Microelectronics CO.,LTD.
Disclaimer
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any legal liability or responsibility for the accuracy, completeness of any product or technology
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described herein or of any information provided herein to the maximum extent permitted by law. The
product specifications do not expand or otherwise modify Wuxi
Unigroup’s
terms and conditions of
purchase, including but not limited to the warranty expressed therein, which apply to these products.
Wuxi Unigroup Microelectronics CO., LTD. strives to supply high-quality high-reliability products.
However, any and all semiconductor products fail with some probability. It is possible that these
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