WUXI-UNIGROUP-MICRO-TTD135N68A
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TTD135N68A
Wuxi Unigroup Microelectronics CO.,LTD.
68V N-Channel Trench MOSFET(Preliminary)
General Description
Product Summary
Trench Power technology
Low R
DS(ON)
V
DS
68V
I
D
(at V
GS
=10V)
135A
Low Gate Charge
R
DS(ON)
(at V
GS
=10V)
< 5.0m
Ω
Optimized for
fast-switching applications
Applications
100% UIS Tested
Synchronous Rectification
in DC/DC and AC/DC Converters
Isolated DC/DC Converters in Telecom and Industrial
TO-252
Part Number
Package Type
Form
Marking
TTD135N68A
TO-252
Tape&Reel
135N68A
Absolute Maximum Ratings (T
A
=25ºC unless otherwise noted)
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
V
DS
V
GS
68
±
20
46
V
V
T
C
=25ºC
Continuous Drain Current
I
D
A
T
C
=100ºC
46
A
Pulsed Drain Current
I
DM
I
AS
405
44
A
A
A
Avalanche Current
A
Single Pulse Avalanche Energy
L =0.3mH
E
AS
290
mJ
160
80
W
W
T
C
=25ºC
C
Power Dissipation
P
D
T
C
=100ºC
Junction and Storage Temperature Range
T
J
, T
STG
-55 to
175
ºC
Thermal Characteristics
Parameter
Symbol
Maximum
Units
Maximum Junction-to-Case
Steady-State
Steady-State
R
Ɵ
JC
0.95
ºC /W
Maximum Junction-to-Ambient
R
Ɵ
JA
100
V1.0
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TTD135N68A
Wuxi Unigroup Microelectronics CO.,LTD.
Electrical Characteristics(T
J
=25ºC unless otherwise noted)
Value
Typ
Symbol
Parameter
Conditions
Units
Min
Max
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
D
=250µA,V
GS
=0V
V
DS
=68V, V
GS
=0V
68
V
T
J
=25ºC
1
I
DSS
Zero Gate Voltage Drain Current
μA
T
J
=100ºC
25
I
GSS
Gate-Body Leakage
Current
Gate Threshold
Voltage
V
DS
=0V, V
GS
=
±
20V
V
DS
=V
GS
, I
D
=250µA
V
GS
=10V, I
D
=30A
V
DS
= 5V, I
D
=20A
±
100
nA
V
V
GS(th)
R
DS(ON)
g
FS
2
3
4
5
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
4.2
30
mΩ
S
V
SD
I
S
=20A, V
GS
=0V
1
V
B
I
S
Maximum Body-Diode Continuous Current
46
A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
Input Capacitance
6646
443
Output Capacitance
V
GS
=0V, V
DS
=30V, f =1MH
Z
pF
Reverse Transfer Capacitance
396
SWITCHING PARAMETERS
Q
g
(10V)
Q
gs
Q
gd
t
D(on)
t
r
Total Gate Charge
114
26
34
17
11
Gate Source Charge
V
GS
=10V,V
DS
=30V, I
D
=30A
nC
ns
Gate Drain Charge
Turn-On Delay Time
Turn-On Rise Time
V
GS
=10V,V
DS
=30
V
,
I
D
=30A,
R
G
=3
Ω
T
D(off)
t
f
Turn-Off Delay Time
55
15
33
51
Turn-Off Fall Time
t
rr
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
I
F
=20A, di/dt =100A/
μs
Q
rr
nC
A. Single
pulse width limited by maximum junction temperature.
B. The
maximum current rating is package limited.
C. The
power dissipation P
D
is based on T
J(MAX)
=175ºC , using junction-to-case thermal resistance, and is more useful in setting
the upper dissipation limit for cases where additional heatsinking is used.
V1.0
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TTD135N68A
Wuxi Unigroup Microelectronics CO.,LTD.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100
80
60
40
20
0
100
80
60
40
20
0
10V
8V
6V
5V
4.5V
4V
V
DS
= 5V
T
J
= 150
º
C
T
J
= 25
º
C
1
2
3
4
5
6
0
1
2
3
4
5
V
DS
(Volts)
V
GS
(Volts)
Figure 1: On-Region Characteristics
Figure 2: Transfer Characteristics
7
6
5
4
3
2
V
GS
= 10V
T
J
= 25
º
C
V
GS
= 0
f = 1MHz
C
iss
C
oss
C
rss
10
0
5
10
15
20
25
30
0
20
30
40
50
60
70
I
D
(A)
V
DS
(Volts)
Figure 3: On-Resistance vs. Drain Current
Figure 4: Capacitance Characteristics
10
2
12
10
8
V
DS
= 30V
T
J
= 150
º
C
10
1
10
0
10
-1
6
T
J
= 25
º
C
4
2
0
0
20
40
60
Q
g
(nC)
80
100
120
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
V
SD
(Volts)
Figure 5: Gate Charge Characteristics
Figure 6: Body Diode Forward Voltage
V1.0
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TTD135N68A
Wuxi Unigroup Microelectronics CO.,LTD.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
1.0
V
GS
= 10V
I
D
= 30A
I
D
= 250µA
0.5
0.0
-0.5
-1.0
-1.5
-50 -25
0
25
50
75 100
125 150
-50 -25
0
25
50
75 100
125 150
Temperature(ºC)
Temperature(ºC)
Figure 7: On-Resistance vs. Junction Temperature
Figure 8: Vgs(th)
vs. Junction Temperature
10
1
10
3
10
0
10
2
10
1
10
-1
D = 0.5
D = 0.2
D = 0.1
t
p
= 10us
t
p
= 100us
t
p
= 1ms
t
p
= 10ms
DC
D = 0.05
D = 0.02
D = 0.01
10
-2
Single Pulse
10
0
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
-2
10
0
10
1
10
3
10
-1
10
2
Pulse Width (s)
Figure 9: Normalized Transient
Thermal Resistance
V
DS
(Volts)
Figure 10: Safe Operating Area
V1.0
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TTD135N68A
Wuxi Unigroup Microelectronics CO.,LTD.
Figure A
：
Gate Charge Test Circuit and Waveforms
Figure B
：
Resistive Switching Test Circuit and Waveforms
Figure C
：
Unclamped Inductive Switching (UIS) Test Circuit and Waveforms
V1.0
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TTD135N68A
Wuxi Unigroup Microelectronics CO.,LTD.
Disclaimer
All product specifications and data are subject to change without notice.
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any legal liability or responsibility for the accuracy, completeness of any product or technology
disclosed hereunder.
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described herein or of any information provided herein to the maximum extent permitted by law. The
product specifications do not expand or otherwise modify Wuxi
Unigroup’s
terms and conditions of
purchase, including but not limited to the warranty expressed therein, which apply to these products.
Wuxi Unigroup Microelectronics CO., LTD. strives to supply high-quality high-reliability products.
However, any and all semiconductor products fail with some probability. It is possible that these
probabilistic failures could give rise to accidents or events that could endanger human lives that could
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Information (including circuit diagrams and circuit parameters) herein is for example only. It is not
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