WUXI-UNIGROUP-MICRO-TTD20N04AT
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TTD20N04
A
T
Wuxi Unigroup Microelectronics CO.,LTD.
40V N-Channel Trench MOSFET(Preliminary)
General Description
Product Summary
Trench Power technology
Low R
DS(ON)
V
DS
40V
I
D
(at V
GS
=10V)
20A
Low Gate Charge
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=4.5V)
<23m
Ω
<28m
Ω
Optimized for
fast-switching applications
Applications
100% UIS Tested
Synchronous Rectification
in DC/DC and AC/DC Converters
Isolated DC/DC Converters in Telecom and Industrial
TO-252
Part Number
Package Type
Form
Marking
TTD20N04AT
TO-252
Tape&Reel
TTD20N04AT
Absolute Maximum Ratings (T
A
=25ºC unless otherwise noted)
Parameter
Symbol
V
DS
Maximum
40
Units
Drain-Source Voltage
Gate-Source Voltage
V
V
V
GS
±
20
T
C
=25ºC
20
17
B
Continuous Drain Current
I
D
A
T
C
=100ºC
A
Pulsed Drain Current
I
DM
I
AS
60
13
A
A
A
Avalanche Current
A
Single Pulse Avalanche Energy
L =0.3mH
T
C
=25ºC
E
AS
25
mJ
W
W
ºC
28.8
C
Power Dissipation
P
D
T
C
=100ºC
14.4
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
T
J
, T
STG
-55 to
175
Symbol
R
Ɵ
JC
Maximum
5.2
Units
Maximum Junction-to-Case
Steady-State
Steady-State
ºC /W
Maximum Junction-to-Ambient
R
Ɵ
JA
100
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TTD20N04
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Wuxi Unigroup Microelectronics CO.,LTD.
Electrical Characteristics(T
J
=25ºC unless otherwise noted)
Value
Typ
Symbol
Parameter
Conditions
Units
Min
Max
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
D
=250µA,V
GS
=0V
V
DS
=40V, V
GS
=0V
40
V
T
J
=25ºC
1
I
DSS
Zero Gate Voltage Drain Current
μA
T
J
=125ºC
100
I
GSS
Gate-Body Leakage
Current
Gate Threshold
Voltage
V
DS
=0V, V
GS
=
±
20V
V
DS
=V
GS
, I
D
=250µA
V
GS
=10V, I
D
=20A
V
GS
=4.5V, I
D
=16A
V
DS
=5V, I
D
=20A
±
100
2
nA
V
V
GS(th)
1
1.4
18
23
mΩ
mΩ
S
R
DS(ON)
Static Drain-Source On-Resistance
21.5
19
28
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
I
S
=20A, V
GS
=0V
1
V
B
Maximum Body-Diode Continuous Current
20
A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
659
70
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
GS
=0V, V
DS
=20V, f =1MH
Z
pF
62
f =1MH
Z
1.2
Ω
SWITCHING PARAMETERS
Q
g
(10V)
Q
g
(4.5V)
Q
gs
Total Gate Charge
16.7
9
Total Gate Charge
V
GS
=10V,V
DS
=20V, I
D
=20A
nC
ns
Gate Source Charge
1.9
4.5
31
Q
gd
Gate Drain Charge
t
D(on)
t
r
T
D(off)
t
f
Turn-On Delay Time
Turn-On Rise Time
3.6
46
V
GS
=10V,V
DS
=20
V
,
I
D
=20A,
R
G
=1.8
Ω
Turn-Off Delay Time
Turn-Off Fall Time
2.8
18.3
4
t
rr
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
I
F
=20A, di/dt =100A/μs
Q
rr
nC
A. Single
pulse width limited by maximum junction temperature.
B. The
maximum current rating is package limited.
C. The power dissipation P
D
is based on T
J(MAX)
=175ºC , using junction-to-case thermal resistance, and is more useful in setting
the upper dissipation limit for cases where additional heatsinking is used.
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Wuxi Unigroup Microelectronics CO.,LTD.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
V
DS
(Volts)
V
GS
(Volts)
Figure 1: On-Region Characteristics
Figure 2: Transfer Characteristics
I
D
(A)
V
DS
(Volts)
Figure 3: On-Resistance vs. Drain Current
Figure 4: Capacitance Characteristics
Q
g
(nC)
V
SD
(Volts)
Figure 5: Gate Charge Characteristics
Figure 6: Body Diode Forward Voltage
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Wuxi Unigroup Microelectronics CO.,LTD.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Temperature(ºC)
Temperature(ºC)
Figure 7: On-Resistance vs. Junction Temperature
Figure 8: Vgs(th)
vs. Junction Temperature
Temperature(ºC)
V
GS
(Volts)
Figure 9: BV
DSS
vs. Junction Temperature
Figure 10: On-Resistance vs. Gate-Source Voltage
Pulse Width (s)
V
DS
(Volts)
Figure 11: Normalized Transient
Thermal Resistance
Figure 12: Safe Operating Area
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TTD20N04
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Wuxi Unigroup Microelectronics CO.,LTD.
Figure A
：
Gate Charge Test Circuit and Waveforms
Figure B
：
Resistive Switching Test Circuit and Waveforms
Figure C
：
Unclamped Inductive Switching (UIS) Test Circuit and Waveforms
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TTD20N04
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Wuxi Unigroup Microelectronics CO.,LTD.
Disclaimer
All product specifications and data are subject to change without notice.
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any legal liability or responsibility for the accuracy, completeness of any product or technology
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Wuxi Unigroup disclaims any and all liability arising out of the use or application of any product
described herein or of any information provided herein to the maximum extent permitted by law. The
product specifications do not expand or otherwise modify Wuxi
Unigroup’s
terms and conditions of
purchase, including but not limited to the warranty expressed therein, which apply to these products.
Wuxi Unigroup Microelectronics CO., LTD. strives to supply high-quality high-reliability products.
However, any and all semiconductor products fail with some probability. It is possible that these
probabilistic failures could give rise to accidents or events that could endanger human lives that could
give rise to smoke or fire, or that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures
include but are not limited to protective circuits and error prevention circuits for safe design, redundant
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Information (including circuit diagrams and circuit parameters) herein is for example only. It is not
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but no guarantees are made or implied regarding its use or any infringements of intellectual property
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