WUXI-UNIGROUP-MICRO-TTD30P10AT
| Part # | WUXI-UNIGROUP-MICRO-TTD30P10AT |
Download  | WUXI-UNIGROUP-MICRO-TTD30P10AT |
TTD30P10
A
T,
T
TP30P10
A
T
Wuxi Unigroup Microelectronics Company
100V P-Channel Trench MOSFET
FE
A
T
URES
Trench Power MOSFET Technology
Low R
DS(ON)
Low Gate Charge
Optimized For Fast-switching Applications
APPLICATIONS
Load Switches
Battery Switch
Device Marking and Package Information
Device
Package
TO-220
TO-252
Marking
30P10AT
30P10AT
TTP30P10AT
TTD30P10AT
Absolute Maximum Ratings
T
C
= 25ºC, unless otherwise noted
Value
TO-220, TO-252
-100
Parameter
Symbol
Unit
Drain-Source Voltage (V
GS
= 0V)
Continuous Drain Current
V
DSS
I
D
V
A
-30
-150
Pulsed Drain Current
(note1)
I
DM
A
Gate-Source Voltage
V
GSS
E
AS
I
As
±
20
54
V
Single Pulse Avalanche Energy
Avalanche Current
(note2)
(note1)
mJ
A
-19
Power Dissipation (T
C
= 25ºC
)
Operating Junction and Storage Temperature Range
P
D
136
W
ºC
T
J
, T
stg
-55~+175
Thermal Resistance
Value
Parameter
Symbol
Unit
TO-220, TO-252
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
R
thJC
R
thJA
1.1
60
K/W
V1.0
1
TTD30P10
A
T,
T
TP30P10
A
T
Wuxi Unigroup Microelectronics Company
Specifications
T
J
= 25ºC
, unless otherwise noted
Value
Parameter
Symbol
Test Conditions
Unit
Min.
Typ.
Max.
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0V, I
D
= -250µA
V
DS
= -100V, V
GS
= 0V, T
J
= 25ºC
V
DS
= -100V, V
GS
= 0V, T
J
= 150ºC
V
GS
=
±
20V
-100
—
—
—
—
-1
V
Zero Gate Voltage Drain Current
I
DSS
μA
—
—
-100
±
100
-3.0
46
Gate-Source Leakage
I
GSS
—
—
nA
V
Gate-Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= -250µA
V
GS
= -10V, I
D
= -15A
-1.0
—
-1.7
35
38
13.6
mΩ
mΩ
S
Drain-Source On-Resistance
(Note3)
R
DS(on)
V
GS
= -4.5V, I
D
= -15A
—
50
Forward Transconductance
(Note3)
Dynamic
g
fs
V
DS
= -50V, I
D
= -10A
—
Input Capacitance
C
iss
C
oss
C
rss
Q
g
—
—
—
—
—
—
—
—
—
—
8704
212
135
140
23
—
—
—
—
—
—
—
—
—
—
V
GS
= 0V,
V
DS
= -50V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
pF
nC
V
DD
= -50V, I
D
= -15A,
V
GS
= -10V
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Q
gs
Q
gd
t
d(on)
t
r
27
20
80
V
DD
= -50
V
,
I
D
= -15A,
ns
R
G
= 2.5
Ω
Turn-off Delay Time
Turn-off Fall Time
t
d(off)
t
f
50
70
Drain-Source Body Diode Characteristics
Continuous Body Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
I
S
I
SM
V
SD
t
rr
—
—
—
—
—
—
—
-30
-150
-1.2
—
T
C
= 25ºC
A
T
J
= 25ºC, I
SD
= -15A, V
GS
= 0V
—
V
Reverse Recovery Time
90
70
ns
nC
I
F
= -15A,
di
F
/dt = 100A/
μs
Reverse Recovery Charge
Q
rr
—
Notes
1. Repetitive
Rating: Pulse width limited by maximum junction temperature
2. I
AS
= -19A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25
°
C
3. Pulse
Test: Pulse width
≤ 300μs, Duty Cycle ≤
1%
V1.0
2
TTD30P10
A
T,
T
TP30P10
A
T
Wuxi Unigroup Microelectronics Company
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 1. Output Characteristics
-10V
-6V
-5V
-4.5
-4V
-3.5V
Figure 2. Transfer Characteristics
80
70
60
50
40
30
20
10
0
20
15
10
5
V
DS
= -5V
T
J
= 125ºC
T
J
= 25ºC
0
0
1
2
3
4
5
0
1
2
3
4
5
-V
DS
, Drain-to-Source Voltage (V)
-V
GS
, Gate-to-Source Voltage (V)
Figure 3. On-Resistance vs. Drain Current
Figure 4. Capacitance
10
5
50
45
40
35
30
25
20
15
10
T
J
= 25ºC
C
iss
10
4
10
3
V
GS
= 4.5V
V
GS
= 10V
C
oss
C
rss
10
2
10
1
V
GS
= 0
f = 1MHz
0
5
10
15
20
25
30
0
20
40
60
-I
D
, Drain Current (A)
-V
DS
, Drain-to-Source Voltage (V)
Figure 5. Gate Charge
Figure 6. Body Diode Forward Voltage
10
2
12
10
8
T
J
= 125
º
C
10
1
10
0
10
-1
T
J
= 25
º
C
6
10
-2
10
-3
10
-4
4
V
DD
= -50V
2
10
-5
0
0
0.2
0.4
0.6
0.8
1
0
25
50
75
100
125
150
Q
g
, Total Gate Charge (nC)
-V
SD
, Source-to-Drain Voltage (V)
V1.0
3
TTD30P10
A
T,
T
TP30P10
A
T
Wuxi Unigroup Microelectronics Company
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 7. On-Resistance vs.
Junction Temperature
Figure 8. Threshold Voltage vs.
Junction Temperature
1
0.5
0
2.5
2
V
GS
= -10V
I
D
= -15A
I
D
= -250µA
1.5
1
-0.5
-1
0.5
0
-1.5
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
T
J
, Junction Temperature (
º
C)
T
J
, Junction Temperature (
º
C)
Figure 9. Transient Thermal Impedance
10
1
10
0
10
-1
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
Single Pulse
10
-2
10
-3
10
-5
10
-4
10
-3
10
-2
10
-1
10
-6
T
p
, Pulse Width (s)
V1.0
4
TTD30P10
A
T,
T
TP30P10
A
T
Wuxi Unigroup Microelectronics Company
Figure A
：
Gate Charge Test Circuit and Waveform
Figure B
：
Resistive Switching Test Circuit and Waveform
Figure C
：
Unclamped Inductive Switching Test Circuit and Waveform
V1.0
5
TTD30P10
A
T,
T
TP30P10
A
T
Wuxi Unigroup Microelectronics Company
Disclaimer
All product specifications and data are subject to change without notice.
For documents and material available from this datasheet, Wuxi Unigroup does not warrant or assume
any legal liability or responsibility for the accuracy, completeness of any product or technology
disclosed hereunder.
No license, express or implied, by estoppels or otherwise, to any intellectual property rights is granted
by this document or by any conduct of Wuxi Unigroup.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining
applications. Customers using or selling Wuxi Unigroup products not expressly indicated for use in
such applications do so entirely at their own risk and agree to fully indemnify Wuxi Unigroup for any
damages arising or resulting from such use or sale.
Wuxi Unigroup disclaims any and all liability arising out of the use or application of any product
described herein or of any information provided herein to the maximum extent permitted by law. The
product specifications do not expand or otherwise modify Wuxi
Unigroup’s
terms and conditions of
purchase, including but not limited to the warranty expressed therein, which apply to these products.
Wuxi Unigroup Microelectronics CO., LTD. strives to supply high-quality high-reliability products.
However, any and all semiconductor products fail with some probability. It is possible that these
probabilistic failures could give rise to accidents or events that could endanger human lives that could
give rise to smoke or fire, or that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures
include but are not limited to protective circuits and error prevention circuits for safe design, redundant
design, and structural design.
In the event that any or all Wuxi Unigroup products (including technical data, services) described or
contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
accordance with the above law.
Information (including circuit diagrams and circuit parameters) herein is for example only. It is not
guaranteed for volume production. Wuxi Unigroup believes information herein is accurate and reliable,
but no guarantees are made or implied regarding its use or any infringements of intellectual property
rights or other rights of third parties.
V1.0
8
