WUXI-UNIGROUP-MICRO-TTP145N06A

TTB145N06A,TTP145N06A  

Wuxi Unigroup Microelectronics CO.,LTD.  

60V N-Channel Trench MOSFET  



General Description  

Product Summary  



Trench Power technology  



Low R

DS(ON)  

V

DS  

60V  

I

D

(at V

GS

=10V)  

145A  



Low Gate Charge  

R

DS(ON)

(at V

GS

=10V)  

< 4.8m

Ω  



Optimized for

 

fast-switching applications  

Applications  

100% UIS Tested  



Synchronous Rectification

 

in DC/DC and AC/DC Converters  



Isolated DC/DC Converters in Telecom and Industrial  

TO-263  

TO-220  

Part Number  

Package Type  

Form  

Marking  

TTB145N06A  

TTP145N06A  

TO-263  

TO-220  

Tape & Reel  

Tube  

TTB145N06A  

TTP145N06A  

Absolute Maximum Ratings (T

A

=25ºC unless otherwise noted)  

Parameter  

Symbol  

V

DS  

Maximum  

60  

Units  

Drain-Source Voltage  

Gate-Source Voltage  

V

V

V

GS  

±

20  

T

C

=25ºC  

105  

105  

B

Continuous Drain Current  

I

D  

A

T

C

=100ºC  

A

Pulsed Drain Current  

I

DM  

I

AS  

435  

57  

A

A

A

Avalanche Current  

A

Single Pulse Avalanche Energy  

L =0.3mH  

T

C

=25ºC  

E

AS  

487  

mJ  

W

W

ºC  

217  

C

Power Dissipation  

P

D  

T

C

=100ºC  

108  

Junction and Storage Temperature Range  

Thermal Characteristics  

Parameter  

T

J

, T

STG  

-55 to

 

175  

Symbol  

R

Ɵ

JC  

Maximum  

0.69  

Units  

ºC /W  

Maximum Junction-to-Case  

Steady-State  

Steady-State  

Maximum Junction-to-Ambient  

R

Ɵ

JA  

100  

V1.0  

1

TTB145N06A,TTP145N06A  

Wuxi Unigroup Microelectronics CO.,LTD.  

Electrical Characteristics(T

J

=25ºC unless otherwise noted)  

Value  

Typ  

Symbol  

Parameter  

Conditions  

Units  

Min  

Max  

STATIC PARAMETERS  

BV

DSS

Drain-Source Breakdown Voltage  

I

D

=250µA,V

GS

=0V  

V

DS

=60V, V

GS

=0V  

60  

—  

—  

—  

2

—  

—  

—  

1

V

T

J

=25ºC  

I

DSS  

Zero Gate Voltage Drain Current  

μA  

T

J

=125ºC  

—  

100  

±

100  

4

I

GSS  

Gate-Body Leakage

 

Current  

Gate Threshold

 

Voltage  

V

DS

=0V, V

GS

=

±

20V  

V

DS

=V

GS

, I

D

=250µA  

V

GS

=10V, I

D

=30A  

V

DS

=5V, I

D

=20A  

—  

nA  

V

V

GS(th)  

R

DS(ON)  

g

FS  

3

Static Drain-Source On-Resistance  

Forward Transconductance  

Diode Forward Voltage  

—  

—  

—  

—  

3.8  

38  

—  

4.8  

—  

mΩ  

S

V

SD  

I

S

=30A, V

GS

=0V  

1

V

B

I

S  

Maximum Body-Diode Continuous Current  

—  

105  

A

DYNAMIC PARAMETERS  

C

iss  

C

oss  

C

rss  

R

g  

Input Capacitance  

—  

—  

—  

—  

6819  

481  

461  

1.6  

—  

—  

—  

—  

Output Capacitance  

Reverse Transfer Capacitance  

Gate Resistance  

V

GS

=0V, V

DS

=30V, f =1MH

Z  

pF  

f =1MH

Z  

Ω

SWITCHING PARAMETERS  

Q

g  

Q

gs  

Q

gd  

t

D(on)  

t

r  

Total Gate Charge  

—  

—  

—  

—  

—  

—  

—  

—  

—  

125  

31.6  

36.7  

25  

—  

—  

—  

—  

—  

—  

—  

—  

—  

Gate Source Charge  

V

GS

=10V,V

DS

=30V, I

D

=20A  

nC  

ns  

Gate Drain Charge  

Turn-On Delay Time  

Turn-On Rise Time  

20  

V

GS

=10V,V

DS

=30

V

,

I

D

=20A,  

R

G

=2.5

Ω  

T

D(off)  

t

f  

Turn-Off Delay Time  

72  

Turn-Off Fall Time  

31  

t

rr  

Body Diode Reverse Recovery Time  

Body Diode Reverse Recovery Charge  

36  

ns  

I

F

=20A, di/dt =100A/μs  

Q

rr  

60  

nC  

A. Single

 

pulse width limited by maximum junction temperature.  

B. The

 

maximum current rating is package limited.  

C. The power dissipation P

D

is based on T

J(MAX)

=175ºC , using junction-to-case thermal resistance, and is more useful in setting  

the upper dissipation limit for cases where additional heatsinking is used.  

V1.0  

2

TTB145N06A,TTP145N06A  

Wuxi Unigroup Microelectronics CO.,LTD.  

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  

V

DS

(Volts)  

V

GS

(Volts)  

Figure 1: On-Region Characteristics  

Figure 2: Transfer Characteristics  

I

D

(A)  

V

DS

(Volts)  

Figure 3: On-Resistance vs. Drain Current  

Figure 4: Capacitance Characteristics  

Q

g

(nC)  

V

SD

(Volts)  

Figure 5: Gate Charge Characteristics  

Figure 6: Body Diode Forward Voltage  

V1.0  

3

TTB145N06A,TTP145N06A  

Wuxi Unigroup Microelectronics CO.,LTD.  

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  

Temperature(ºC)  

Temperature(ºC)  

Figure 7: On-Resistance vs. Junction Temperature  

Figure 8: Vgs(th)

 

vs. Junction Temperature  

Temperature(ºC)  

V

GS

(Volts)  

Figure 9: BV

DSS

vs. Junction Temperature  

Figure 10: On-Resistance vs. Gate-Source Voltage  

Pulse Width (s)  

V

DS

(Volts)  

Figure 11: Normalized Transient

 

Thermal Resistance  

Figure 12: Safe Operating Area  

V1.0  

4

TTB145N06A,TTP145N06A  

Wuxi Unigroup Microelectronics CO.,LTD.  

Figure A

：

Gate Charge Test Circuit and Waveforms  

Figure B

：

Resistive Switching Test Circuit and Waveforms  

Figure C

：

Unclamped Inductive Switching (UIS) Test Circuit and Waveforms  

V1.0  

5

TTB145N06A,TTP145N06A  

Wuxi Unigroup Microelectronics CO.,LTD.  

TO-263(

集佳

)  

V1.0  

6

TTB145N06A,TTP145N06A  

Wuxi Unigroup Microelectronics CO.,LTD.  

TO-220

（集佳）  

V1.0  

7

7

TTB145N06A,TTP145N06A  

Wuxi Unigroup Microelectronics CO.,LTD.  

Disclaimer  

All product specifications and data are subject to change without notice.  

For documents and material available from this datasheet, Wuxi Unigroup does not warrant or assume  

any legal liability or responsibility for the accuracy, completeness of any product or technology  

disclosed hereunder.  

No license, express or implied, by estoppels or otherwise, to any intellectual property rights is granted  

by this document or by any conduct of Wuxi Unigroup.  

The products shown herein are not designed for use in medical, life-saving, or life-sustaining  

applications. Customers using or selling Wuxi Unigroup products not expressly indicated for use in  

such applications do so entirely at their own risk and agree to fully indemnify Wuxi Unigroup for any  

damages arising or resulting from such use or sale.  

Wuxi Unigroup disclaims any and all liability arising out of the use or application of any product  

described herein or of any information provided herein to the maximum extent permitted by law. The  

product specifications do not expand or otherwise modify Wuxi

Unigroup’s

terms and conditions of  

purchase, including but not limited to the warranty expressed therein, which apply to these products.  

Wuxi Unigroup Microelectronics CO., LTD. strives to supply high-quality high-reliability products.  

However, any and all semiconductor products fail with some probability. It is possible that these  

probabilistic failures could give rise to accidents or events that could endanger human lives that could  

give rise to smoke or fire, or that could cause damage to other property. When designing equipment,  

adopt safety measures so that these kinds of accidents or events cannot occur. Such measures  

include but are not limited to protective circuits and error prevention circuits for safe design, redundant  

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In the event that any or all Wuxi Unigroup products (including technical data, services) described or  

contained herein are controlled under any of applicable local export control laws and regulations, such  

products must not be exported without obtaining the export license from the authorities concerned in  

accordance with the above law.  

Information (including circuit diagrams and circuit parameters) herein is for example only. It is not  

guaranteed for volume production. Wuxi Unigroup believes information herein is accurate and reliable,  

but no guarantees are made or implied regarding its use or any infringements of intellectual property  

rights or other rights of third parties.  

V1.0  

8