WXDH-D4N65
| Part # | WXDH-D4N65 |
Download  | WXDH-D4N65 |
D4N65
4A 650V N-channel Enhancement Mode Power MOSFET
1
Description
These N-channel enhanced vdmosfets, is obtained by the self-aligned
planar technology which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. Which accords with the
RoHS standard.
V
DSS
= 650V
I
D
= 4.0A
R
DS(on)
Ω
TYP)
= 2.4
（
2
Features
● Fast switching
● ESD improved capability
● Low on resistance(Rdson≤2.8Ω)
● Low gate charge(Typ: 14.5nC)
● Low reverse transfer capacitances(Typ: 3.5pF)
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3
Applications
TO-252B
● Used in various power switching circuit for system
miniaturization and higher efficiency.
● Power switch circuit of electron ballast and adaptor.
4
Electrical Characteristics
4.1 Absolute Maximum Ratings
(
T
c=25
℃
,unless otherwise noted)
PARAMETER
Drian-Source Voltage
SYMBOL
VALUE
UNIT
V
DS
V
GS
I
D
650
±30
V
V
Gate-Source Voltage
Drain Current(continuous)
(Note 3)
Drain Current(continuous)(T=100
℃
)
(Note 3)
Drain Current(Pulsed)
4
A
I
D
2.5
A
I
DM
E
AS
16
A
Single Pulse Avalanche Energy
(Note 4)
200
mJ
W
W
℃
℃
Derating Factor above
Power Dissipation
T
a
=25
℃
T
C
=25
℃
0.6
P
D
75
Operating Junction
T
emperature Range
Storage
T
emperature Range
T
j
-55
～
150
-55
～
150
T
stg
4.2 Thermal Characteristics
PARAMETER
SYMBOL
VALUE
UNIT
Thermal Resistance, Junction to Case-sink
Thermal Resistance, Junction to Ambient
R
thJC
R
thJA
1.67
100
℃
/W
℃
/W
Jiangsu Donghai Semiconductor
T
echnology Co., Ltd
Rev. 1.0
Page 1 of 6
D4N65
4.3 Electrical Characteristics
(
T
c=25
℃
,unless otherwise noted)
VALUE
PARAMETER
SYMBOL
BV
DSS
I
DSS
Test Condition
UNIT
MIN
TYP
MAX
Off Characteristics
Drain-source Breakdown Voltage
I
D
=250μA,V
GS
=0V
V
DS
=650V,V
GS
=0V,
T
C
=25
℃
V
DS
=520V,V
GS
=0V,
T
C
=125
℃
650
—
—
—
—
1
V
μA
Zero Gate Voltage Drain Current
—
—
—
—
100
μA
nA
Gate-to-Body Leakage
Current
I
GSS
V
GS
=±30V,V
DS
=0V
±100
On Characteristics
(Note 3)
Gate threshold voltage
Drain-source on Resistance
Dynamic Characteristics
Input Capacitance
V
GS(th)
R
DS(on)
V
DS
=V
GS
,I
D
=250μA
V
GS
=10V,I
D
=2.0A
2.0
—
—
2.4
4.0
2.8
V
Ω
C
iss
C
oss
C
rss
T
d(on)
t
r
T
d(off)
t
f
Q
g
—
—
—
—
—
—
—
—
—
—
610
53
3.5
14
16
32
11
14.5
3
—
—
—
—
—
—
—
—
—
—
V
GS
=0V,V
DS
=25V,
f=1.0MHz
Output Capacitance
pF
ns
nc
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall
ID=4A, VDD=325V,
VGS=10V, RG=10Ω
Total Gate Charge
ID=4A,VDD=520V,
VGS=10V
Gate-to-Source Charge
Gate-to-Drain(“Miller”)C harge
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
Continuous Source Current
(BodyDiode)
(Note 3)
Q
gs
Q
gd
6.5
V
FSD
I
S
V
GS
=0V,I
S
=4A
—
—
—
—
—
—
1.5
4
V
A
Reverse Recovery Time
TJ=25
℃
,IF=4A,
dIF/dt=100A/μS,VGS=0V
trr
256
1200
—
ns
nc
Reverse Recovery Charge
Qrr
—
Notes
：
1: Repetitive rating, pulse width limited by maximum junction temperature.
2: Surface mounted on FR4 Board, t≤10sec.
3: Pulse width ≤ 300μs, duty cycle ≤ 2%.
4: L=10 mH,I
D
=6.3A,V
DD
=50V,,Start T
J
=25
℃
.
Jiangsu Donghai Semiconductor
T
echnology Co., Ltd
Rev. 1.0
Page 2 of 6
D4N65
5
Typical Test Circuit and Waveform
Gate Charge Test Circuit
Gate Charge Waveforms
Resistive Switching Test Circuit
Resistive Switching Waveforms
Diode Reverse Recovery Test Circuit
Diode Reverse Recovery Waveform
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveform
Jiangsu Donghai Semiconductor
T
echnology Co., Ltd
Rev. 1.0
Page 3 of 6
D4N65
Maximum Forward Bias Safe OperatingArea
Maximum Power Dissipation vs Case Temperature
Maximum Continuous Drain Current vs Case Temperature
Typical Output Characteristics
Maximum Effective Thermal Impendance , Junction to Case
Typical Transfer Characteristics
Typical Body Diode Transfer Characteristics
Jiangsu Donghai Semiconductor
T
echnology Co., Ltd
Rev. 1.0
Page 4 of 6
D4N65
Typical Drain to Source ON Resistance vs Drain Curren
Typical Theshold Voltage vs Junction Temperature
Typical Capacitance vs Drain to Source Voltage
Typical Drian to Source on Resistance vs Junction Temperature
Typical Breakdown Voltage vs Junction Temperature
Typical Gate Charge vs Gate to Source Voltage
Jiangsu Donghai Semiconductor
T
echnology Co., Ltd
Rev. 1.0
Page 5 of 6
D4N65
6 Product
Specifications and Packaging Models
Product Model
Package Type
Mark Name
D4N65
RoHS
Pb-free
Package
Braid
Quantity
2500/disc
D4N65
TO-252
7
Dimensions
TO-252 PACKAGE OUTLINE DIMENSIONS
8
Attentions
Jiangsu Donghai Semiconductor
T
echnology Co., Ltd. reserves the right to change the specification
without prior notice! The customer should obtain the latest version of the information before making
the order and verify that the information is complete and up to date.
It is the responsibility of the purchaser for any failure or failure of any semiconductor product under
certain conditions. It is the responsibility of the purchaser to comply with safety standards and to
take safety measures in the system design and machine manufacturing of WXDH products in order
to avoid potential risk of failure. Injury or property damage.
Product promotion is endless, our company will be dedicated to provide customers with better
products.
9
Appendix
Revision history:
Date
REV.
1.0
Description
Original
Page
2020.03.09
Jiangsu Donghai Semiconductor
T
echnology Co., Ltd
Rev. 1.0
Page 6 of 6
