WXDH-DH025N03P
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DH025N03P
120A 30V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel enhancement mode power mosfets used
2
D
S
V
DSS
= 30V
R
DS(on) (TYP)
= 2.0mΩ
I
D
= 120A
advanced trench technology design, provided excellent
Rdson and low gate charge. Which accords with the RoHS
standard.
G
1
3
2 Features
● Low
on resistance
● Low
gate charge
● Fast
switching
● Low
reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔV
DS
test
3 Applications
● Power switching applications
● Inverter management system
● Electric tools
● Automotive electronics
4 Electrical
Characteristics
4.1 Absolute Maximum Ratings
(
T
c=25
℃
,unless otherwise noted
)
Symbol
Rating
Units
Parameter
Drian-to-Source Voltage
V
DSS
V
GSS
30
±20
V
V
Gate-to-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(1)
Single Pulse Avalanche Energy
(4)
Avalanche Current
(4)
T
C
=25
℃
120
A
I
D
T
C
=100
℃
85
A
I
DM
E
AS
I
AS
480
A
330
mJ
A
36.5
—
P
tot
P
tot
T
j
W
W
℃
℃
℃
T
a
=25
℃
T
C
=25
℃
Power Dissipation
104
-55
～
175
-55
～
175
260
Junction
T
emperature Range
Storage
T
emperature Range
T
stg
T
L
Maximum
T
emperature for soldering
4.2 Thermal Characteristics
Parameter
Symbol
Rating
Units
Thermal Resistance,Junction to Case-sink
Thermal Resistance,Junction to Ambient
R
thJC
R
thJA
1.44
—
℃
/W
℃
/W
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T
echnology CO.,LTD.
Rev. 1.0
Page 1 of 9
DH025N03P
4.3 Electrical Characteristics
Parameter
(
T
c=25
℃
,unless otherwise noted
)
Value
Units
Symbol
Test Condition
Min
30
Typ
Max
—
Off Characteristics
Drain-to-Source
Breakdown Voltage
BV
DSS
I
DSS
I
D
=250μA,V
GS
=0V
35
V
V
DS
=30V,V
GS
=0V,T
C
=25
℃
V
DS
=30V,V
GS
=0V,T
C
=125
℃
—
—
—
—
1
μA
μA
Drain-to-Source Leakage
Current
100
Gate-to-Source Leakage
Current
I
GSS
V
GS
=±20V,V
DS
=0V
—
—
±100
nA
On Characteristics
Gate
T
hreshold Voltage
V
GS(th)
R
DS(on)
V
DS
=V
GS
,I
D
=250μA
V
GS
=10V,I
D
=60A
V
GS
=4.5V,I
D
=50A
1
—
—
1.5
2
V
2.0 2.4
3.0 4.2
mΩ
mΩ
Drain-to-Source on-state
Resistance
Dynamic Characteristics
Input Capacitance
C
iss
—
—
3795
561
—
Output Capacitance
C
oss
—
—
—
V
GS
=0V,V
DS
=15V,f=1.0MHz
V
DD
=0V,V
GS
=0V,F=1MHz
pF
Ω
Reverse Transfer
Capacitance
C
rss
R
G
—
—
440
2.7
Gate Resisitance
Switching Characteristics
Turn-on Delay Time
Turn-on Rise Time
t
d(on)
t
r
t
d(off)
t
f
—
—
—
—
—
—
21
119
60
—
—
—
—
—
—
I
D
=60A,
V
DD
=15V,
V
GS
=4.5V,
R
GEN
=2Ω
nS
nC
Turn-off Delay Time
Turn-off Fall Time
119
88
Total Gate Charge
Q
g
Q
gs
Gate-to-Source Charge
15
I
D
=60A,V
DD
=15V,V
GS
=10V
V
GS
=0V,I
S
=50A
Gate-to-Drain(“Miller”)
Charge
Q
gd
—
23
—
Drain-Source Diode Characteristics
Diode Forward Voltage
(3)
Diode Forward Current
Reverse Recovery Time
(3)
V
SD
I
S
—
—
—
0.85
—
1.2
120
—
V
A
t
rr
27.6
nS
T
J
=25
℃
,I
F
=40A,
dI
F
/dt=100A/μS,V
GS
=0V
Reverse Recovery
Charge
(3)
Q
rr
—
9.8
—
nC
Notes
：
1: Repetitive rating, pulse width limited by maximum junction temperature.
2: Surface mounted on FR4 Board, t≤10sec.
3: Pulse width ≤ 300μs, duty cycle ≤ 2%.
4: L=0.5mH,I
D
=36.5A,V
DD
=24V,V
GATE
=30V,Start T
J
=25
℃
.
Jiangsu Donghai Semiconductor
T
echnology CO.,LTD.
Page 2 of 9
Rev. 1.0
DH025N03P
5 Typical
characteristics diagrams
Figure 1 Output Characteristics
Figure 2 Transfer Characteristics
Figure 3. Threshold vs Temperature
Figure 4. Rdson vs Temperature
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T
echnology CO.,LTD.
Rev. 1.0
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DH025N03P
5 Typical
characteristics diagrams(continues)
Figure 5. Power De-rating
Figure 6. ID Current Deratin
Figure 7. Capacitance Characteristics
Figure 8. Gate Charge Characteristics
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T
echnology CO.,LTD.
Page 4 of 9
Rev. 1.0
DH025N03P
6 Typical
Test Circuit and Waveform
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T
echnology CO.,LTD.
Rev. 1.0
Page 5 of 9
DH025N03P
6 Typical
Test Circuit and Waveform(continues)
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T
echnology CO.,LTD.
Page 6 of 9
Rev. 1.0
DH025N03P
7 Product
Names Rules
D H X X X N E X X F
Packaging Code
220F: F
220: Nothing
262:
3P:
DFN5*6
I
D
263: E
247: B
P
LOGO Code: DH
Rated Voltage Code
With 2-3 Digitals,
For Example:
06 on behalf of 60V
08 on behalf of 80V
045 on behalf of 45V
RDSON Specification Code
With 3 Digitals,
For Example:
045 on behalf of 4.5m
Ω
050 on behalf of 5.0m
Ω
155 on behalf of 15.5m
Ω
Special Function Code
E on behalf of build-in ESD
Nothing on behalf of not ESD
Channel Polarity Code
N
o
n
b
ehal
f
o
f
N
c
hannel
P
o
n
b
ehal
f
o
f
P
c
hannel
8 Product
Specifications and Packaging Models
Product
Model
Package
Type
Mark
Name
Indentification
Code
RoHS
Package
Quantity
DH025N03P
P PAK5*6-8
DH025N03P
B37
Pb-free
T
ape
＆
Reel
2500/box
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T
echnology CO.,LTD.
Page 7 of 9
Rev. 1.0
DH025N03P
9 Dimension
Jiangsu Donghai Semiconductor
T
echnology CO.,LTD.
Rev. 1.0
Page 8 of 9
DH025N03P
10 Attentions
Jiangsu Donghai Semiconductor
T
echnology CO.,LTD. reserves the right to change the
specification without prior notice! The customer should obtain the latest version of the information
before making the order and verify that the information is complete and up to date.
It is the responsibility of the purchaser for any failure or failure of any semiconductor product under
certain conditions. It is the responsibility of the purchaser to comply with safety standards and to
take safety measures in the system design and machine manufacturing of Donghai products in
order to avoid potential risk of failure. Injury or property damage.
Product promotion is endless, our company will be dedicated to provide customers with better
products.
11 Appendix
Revision history:
Date
REV.
1.0
Description
Original
Page
2020.07.02
Jiangsu Donghai Semiconductor
T
echnology CO.,LTD.
Page 9 of 9
Rev. 1.0
