XDS-TX15N10B
| Part # | XDS-TX15N10B |
Download  | XDS-TX15N10B |
TX15N10B
N channel 100V MOSFET
Description
Features
The TX15N10B is the N-Channel logic enhancement
mode power field effect transistorsare produced using high cell
density, DMOS trench technology.This high
density process
isespecially tailored
to minimize
on-state resistance.These
V
DS
100V
100mΩ
15A
R
DS(on)Max.
I
D
devices are
particularly suited
for lowvoltage application
such
●
Super high
density cell
design for
as cellular phone, notebook computer power management and
extremely low R
DS(ON)
otherbattery powered
circuits,and low in-line
power loss that
●
Exceptional on-resistance
and maximum
are needed in a very smalloutlinesurface mount package.
DC current capability
Pin configuration
Order Number
TX15N10B
Package
TO-252
2
1
3
TO-252
Maximum Ratings (
Tc = 25
℃
unless otherwise noted*)
Parameter
Symbol
V
DSS
Ratings
100
Units
V
Drain-Source Voltage
Gate-Source Voltage
V
GSS
±
20
V
A
A
A
15
Tc=25
℃
Tc=70
℃
Continuous Drain Current
Pulsed Drain Current
I
D
14
59
I
DM
Tc=25
℃
Tc=70
℃
34.7
Power Dissipation
P
D
W
22.2
-55~+175
℃
Operating Junction and Storage Temperature Range
* Dran current limited by maximum junction temperature.
T
J
,T
stg
Thermal Characteristics
Parameter
Symbol
RthCS
RthJC
RthJA
Ratings
0.5
Units
℃
/W
℃
/W
℃
/W
Thermal resistance, case to sink typ.
Thermal resistance junction to case.
Thermal resistance junction to ambient.
3.6
110
V1.0
1
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TX15N10B
N channel 100V MOSFET
Electrical characteristics
(TA =25
℃
Unless Otherwise Specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
STATIC
—
—
—
BV
DSS
V
GS(th)
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250μA
100
1
V
V
3
Gate Threshold Voltage
Gate-Body Leakage
V
DS
=V
GS
, I
D
=250μA
V
DS
=0V, V
GS
=±20V
I
GSS
—
—
—
—
±
100
nA
μA
I
DSS
V
DS
=100V, V
GS
=0V
V
GS
=10V, I
D
=8A
1
Zero Gate Voltage Drain Current
Drain-Source On-Resistance
—
—
R
DS(ON)
V
SD
mΩ
V
80
100
1.2
Diode Forward Voltage
0.9
I
S
=8A, V
GS
=0V
DYNAMIC
Q
g
Total Gate Charge
Total Gate Charge
V
DD
=80V, V
GS
=10V, I
D
=10A
V
DD
=80V, V
GS
=4.5V, I
D
=10A
24
13
—
—
—
—
Q
g
nC
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
4.6
7.6
0.9
890
58
23
14
33
39
5
Q
gs
Q
gd
R
g
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
V
DS
=0V,V
GS
=0V, f=1MHz
V
DS
=15V, V
GS
=0V, f=1MHz
Ω
C
iss
Input Capacitance
Output Capacitance
pF
C
oss
C
rss
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
t
d(on)
t
r
V
DS
=50V, R
G
=1Ω
R
L
=5Ω,V
GEN
=10V,
ns
Turn-Off Delay Time
Turn-Off Fall Time
t
d(off)
t
f
Notes :a. Pulse test:pulse width 300 us,duty cycle 2% ,Guaranteed by design,not subject to production testing.
b. XDSSEMI reserves the right to improve product design,functions and reliability without notice.
V1.0
2
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TX15N10B
N channel 100V MOSFET
Typical Characteristics
(TJ =25
℃
Noted)
On Resistance vs.Junction Temperature
1.8
On Resistance vs.
Drain Current
0.15
0.1
1.6
1.4
VGS=10V
1.2
1
0.05
0.8
0.6
0 0
2
4
6
8
10
-50
-25
0
25
50
75
100 125 150
Junction Temperature,T
j
(
℃
)
Drain Current,I
D
(A)
Capacitance
On Resistance vs. Gate-to-Source Voltage
0.4
1200
Ciss
0.3
0.2
900
300
ID=8A
300
0.1
Coss
Crss
0 0
0 0
5
10
15
20
25
30
2
4
6
8
10
Drain-Source Voltage,V
DS
(V)
Gate-to-Source Voltage,V
GS
(V)
Threshold Voltage
Gate Charge Characteristics
15
0.4
VGS=5V~10V
VGS=4V
12
9
0.2
0
ID=250uA
6
-0.2
3
0
-0.4
-0.6
VGS=3V
0
1
2
3
4
-50
-25
0
25
50
75
100 125
150
Temperature,T
j
(
℃
)
Drain-Source Voltage,V
DS
(V)
V1.0
3
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5
TX15N10B
N channel 100V MOSFET
Typical Characteristics(TJ=25
℃
)
Body diode characteristics
10
8
VDS=80V
ID=10A
10
6
4
1
2
Tc=25
℃
0 0
0 0
0.2
0.4
0.6
0.8
1
1.2
1.4
5
10
15
20
25
Total Gate Charge,Q
g
(nC)
Source-Drain Voltage,V
SD
(V)
Maximum Forward Biased Safe Operating Area
Single Pulse Maximum Power Dissipation
50
100
RDS
(ON)
Limited
100ms
40
30
1S
10
10S
DC
20
1
10
Tc=25
℃
Tc=25
℃
00.1
0
1
10
100
1000
0.01
0.1
1
10
100
1000
0.001
Drain-Source Voltage,V
DS
(V)
Time,t1(sec)
Normalized Thermal Transient Impedance,Junction to Ambient
1
50%
20%
Notes:
10%
5%
0.1
P
DM
t
1
t
2
1.Duty Cyde,D=t1/t2
2%
1%
2.Per Unit Base =RthJC=3.6
℃
/W
3.TJM-TA=PDM ZthJA(t)
4.Surface Mounted
Sing Pulse Curve
0.01
1E-5
1E-4
1E-3
1E-2
1E-1
1
Square Wave Pulse Duration(sec)
V1.0
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