XZT-2SC1623
| Part # | XZT-2SC1623 |
Download  | XZT-2SC1623 |
X• T ELECTRONICS
2SC1623
TRANSISTOR (NPN)
FEATURES
SOT-23
z
z
High DC current gain :h
FE
=200(Typ) V
CE
=6V,I
C
=1mA
High voltage:V
CEO
=50V
3
MAXIMUM RATINGS
(T
a
=25
℃
unless otherwise noted)
1
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Value
60
Unit
V
Collector-Base Voltage
1. BASE
2
V
Collector-Emitter Voltage
50
2.EMITTER
3.COLLECTOR
V
Emitter-Base Voltage
5
Collector Current
100
200
625
mA
mW
℃
/W
Collector Power Dissipation
Thermal Resistance From Junction
T
o Ambient
P
C
R
ΘJA
Operation Junction
and
Storage Temperature Range
T
J
,
T
stg
-55
～
+150
℃
ELECTRICAL CHARACTERISTICS (T
a
=25
℃
unless otherwise specified)
Parameter
Symbol
T
e
st
conditions
Min
60
50
5
Typ
Max Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
V
V
V
I
C
=
100
μ
A,I
E
=0
I
C
=
1
mA,I
B
=0
I
E
=
100
μ
A,I
C
=0
V
CB
=
60
V
,
I
E
=0
μ
A
μ
A
0.1
0.1
600
0.3
1
Emitter cut-off current
I
EBO
V
EB
=
5
V
,
I
C
=0
DC current gain
h
FE
200
V
CE
=
6
V
,
I
C
=
1
mA
I
C
=
100
mA,I
B
=
10
mA
I
C
=
100
mA,I
B
=
10
mA
V
CE
=
6
V
,
I
C
=
10
mA
90
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
CE(sat)
V
BE(sat)
f
T
V
V
MHz
250
CLASSIFICATION OF
h
FE(1)
L4
L5
135-270
L5
L6
200-400
L6
L7
Rank
90-180
L4
300-600
L7
Range
Marking
第 1 页 共 3 页
Rev : B
X• T ELECTRONICS
2SC1623
TRANSISTOR (NPN)
Typical Characteristics
Static Characteristic
h
FE
——
I
C
4
3
2
1
0
1000
100
10
COMMON
EMITTER
T
a
=25
℃
10uA
9uA
T
a
=100
℃
8uA
7uA
T
a
=25
℃
6uA
5uA
4uA
3uA
2uA
I
B
=1uA
COMMON EMITTER
V
CE
= 6V
0
2
4
6
8
0.1
1
10
100
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
V
CEsat
——
I
C
V
BEsat
——
I
C
2000
1000
300
100
T
a
=25
℃
T
a
=100
℃
T
a
=100
℃
T
a
=25
℃
β
=10
β
=10
10
0.1
100
0.1
1
10
100
1
10
100
COLLECTOR CURREMT
I
C
(mA)
COLLECTOR CURREMT
I
C
(mA)
I
C
—— V
BE
f
T
—— I
C
100
1000
100
10
10
1
COMMON EMITTER
V
CE
=6V
COMMON EMITTER
V
CE
=6V
T
a
=25
℃
0.1
0.0
0.3
0.6
0.9
1.2
70
1
10
COLLECTOR CURRENT
I
C
(mA)
BASE-EMMITER VOLTAGE
V
BE
(V)
P
C
—— T
a
C
ob
/C
ib
——
V
CB
/V
EB
250
200
150
100
50
50
10
f=1MHz
I
E
=0/I
C
=0
T
a
=25
℃
C
ib
C
ob
1
0
0.1
0
25
50
75
100
125
150
20
0.1
1
10
AMBIENT TEMPERATURE
T
a
(
℃
)
REVERSE VOLTAGE
V
(V)
第 2 页 共 3 页
Rev : B
X• T ELECTRONICS
2SC1623
TRANSISTOR (NPN)
SO
T
-23 Package Outline Dimensions
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
Min
Max
0.045
0.004
0.041
0.020
0.006
0.118
0.055
0.100
A
A1
A2
b
c
D
E
E1
e
e1
L
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
0.950 T
Y
P
0.550 REF
0.037 T
Y
P
0.022 REF
1.800
2.000
0.071
0.079
L1
θ
0.300
0°
0.500
8°
0.012
0°
0.020
8
°
SO
T
-23 Suggested Pad Layout
第 3 页 共 3 页
Rev : B
