XZT-BC807-25

Part #	XZT-BC807-25
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X• T ELECTRONICS

BC807

TRANSISTOR (PNP)

FEATURES

SOT-23

z

z

z

z

z

For general AF applications

High collector current

High current gain

Low collector-emitter saturation voltage

Complementary types: BC817 (NPN)

3

1

MAXIMUM RATINGS

(T

a

=25

℃

unless otherwise noted)

1. BASE

2

Symbol

V

CBO

V

CEO

V

EBO

I

C

Parameter

Value

-50

Unit

V

2.EMITTER

Collector-Base Voltage

3.COLLECTOR

V

Collector-Emitter Voltage

-45

V

Emitter-Base Voltage

-5

Collector Current

-500

300

417

mA

mW

℃

/W

Collector Power Dissipation

Thermal Resistance From Junction

T

o Ambient

P

C

R

ΘJA

Operation Junction

and

Storage Temperature Range

T

J

,

T

stg

-55

～

+150

℃

ELECTRICAL CHARACTERISTICS (T

a

=25

℃

unless otherwise specified)

Parameter

Symbol

T

e

st conditions

Min

Max

Unit

Collector-base breakdown voltage

V

CBO

-50

V

I

C

= -10

μ

A, I

E

=0

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

V

CEO

V

EBO

I

CBO

I

C

= -10mA, I

B

=0

I

E

= -1

μ

A, I

C

=0

V

CB

= -45

V

,

I

E

=0

V

EB

= -4

V

,

I

C

=0

-45

-5

V

V

Collector cut-off current

Emitter cut-off current

-0.1

-0.1

6

00

μ

A

μ

A

I

EBO

h

FE(1)

h

FE(2)

V

CE

= -1

V

,

I

C

= -100mA

100

DC current gain

V

CE

= -1

V

,

I

C

= –

5

00mA

4

0

Collector-emitter saturation voltage

Base-emitter saturation voltage

V

CE

(sat)

I

C

=-500mA, I

B

= -50mA

I

C

= -500mA, I

B

= -50mA

-0.7

-1.2

V

V

V

BE

(sat)

V

CE

= -5

V

, I

C

= -10mA

f=

100MHz

Transition frequency

100

MHz

f

T

CLASSIFICATION OF

h

FE(1)

Rank

Range

Marking

BC8

0

7-16

BC8

0

7-25

BC8

0

7-40

250-600

5

C

100-250

160-400

5

A

5

B

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第 1 页共 3 页

Rev : B

X• T ELECTRONICS

BC807

TRANSISTOR (PNP)

Typical Characteristics

h

FE

—— I

C

Static Characteristic

–

–

–

–

–

–

280

240

200

160

120

80

500

400

–

–

-1mA

COMMON

EMITTER

T

a

=25

℃

T

a

=100

o

C

-0.9mA

-0.8mA

-0.7mA

-0.6mA

-0.5mA

300

200

–

T

a

=25

o

C

–

-0.4mA

-0.3mA

-0.2mA

40

–

V

CE

= -1V

– 500

I

B

=-0.1mA

0

100

–

–

–

–

10

–

100

0

–

2

4

6

8

–

–

12

14

16

1

10

–

–

–

–

COLLECTOR CURRENT

I

C

(mA)

COLLECTOR-EMITTER VOLTAGE

V

CE

(V)

V

CEsat

—— I

C

V

BEsat

—— I

C

-1.2

-1.0

-0.8

-0.6

-0.4

-0.2

-0.4

-0.3

-0.2

-0.1

-0.0

β

=10

β

=10

T

a

=25

℃

T

a

=100

℃

T

a

=100

℃

T

a

=25

℃

-0.1

-1

-10

-100

– 500

-0.1

-1

-10

-100

– 500

COLLECTOR CURRENT

I

C

(mA)

COLLECTOR CURRENT

I

C

(mA)

I

C

—— V

BE

C

ob

/ C

ib

—— V

CB

/

V

EB

-1000

-100

-10

100

f=1MHz

I

E

=0 / I

C

=0

50

T

a

=25

o

C

C

ib

T

a

=100

o

C

10

T

a

=25

℃

-1

C

ob

V

CE

=-1V

-0.1

1

–

–

0.9

–

10

0.3

0.4

0.5

0.6

0.7

0.8

1.0

–

0

5

–

–

–

–

–

–

REVERSE VOLTAGE

V

(V)

BASE-EMITTER VOLTAGE

V

BE

(V)

f

T

——

I

C

P

c

—— T

a

0.4

0.3

0.2

0.1

0.0

300

100

V

CE

=-5V

T

a

=25

o

C

10

–

60

1

10

–

0

25

50

75

100

125

150

–

AMBIENT TEMPERATURE

T

a

(

℃

)

COLLECTOR CURRENT

I

C

(mA)

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第 2 页共 3 页

Rev : B

X• T ELECTRONICS

BC807

TRANSISTOR (PNP)

SO

T

-23 Package Outline Dimensions

Dimensions In Millimeters

Dimensions In Inches

Symbol

Min

Max

1.150

0.100

1.050

0.500

0.150

3.000

1.400

2.550

Min

Max

0.045

0.004

0.041

0.020

0.006

0.118

0.055

0.100

A

A1

A2

b

c

D

E

E1

e

e1

L

0.900

0.000

0.900

0.300

0.080

2.800

1.200

2.250

0.035

0.000

0.035

0.012

0.003

0.110

0.047

0.089

0.950 T

Y

P

0.550 REF

0.037 T

Y

P

0.022 REF

1.800

2.000

0.071

0.079

L1

θ

0.300

0°

0.500

8°

0.012

0°

0.020

8

°

SO

T

-23 Suggested Pad Layout

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第 3 页共 3 页

Rev : B