XZT-BC856S
| Part # | XZT-BC856S |
Download  | XZT-BC856S |
X• T ELECTRONICS
ꢀꢁꢂꢃꢄꢅꢆ
DUAL TRANSISTOR (PNP+PNP)
SOT-
36
3
FEATURES
ꢀ
ꢀ
ꢀ
Two transistors in one package
Reduces number of components and board space
No mutual interference between the transistors
6
5
4
1
2
3
MAKING: 5Ft
1. Emitter1
2. Base1
3. Collector2
4. Emitter2
5. Base2
5Ft
6. Collector1
Maximum Ratings @Ta=25
℃
ꢁꢂꢃꢄꢅꢆꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢇꢈꢉꢈꢃꢊꢋꢊꢉꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢌꢈꢆꢍꢊ
ꢎꢏꢐꢋꢑ
V
ꢀ
ꢀ
ꢀ
ꢀ
ꢌ
ꢒꢓꢔ
ꢀ
Collector- Base Voltage
-80
-65
-5
ꢌ
ꢒꢕꢔ
ꢌ
ꢕꢓꢔ
ꢖ
ꢒ
ꢀ
ꢀ
ꢀ
Collector-Emitter Voltage
V
Emitter-Base Voltage
V
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance
ꢁꢂꢃꢄꢅꢁ
Junction to Ambient
-0.1
0.2
625
A
ꢇ
ꢒ
W
ꢗ
ꢀ
ꢘꢙ
ꢀ
ꢀ/W
Operation Junction
and
Storage Temperature Range
T
J
,T
STG
-55~+
150
ꢀ
ELECTRICAL CHARACTERISTICS(T
a
=25
℃
unless otherwise specified)
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢁꢂꢃꢂꢄꢅꢆꢅꢃꢀ
ꢇꢈꢄꢉꢊꢋ ꢀ
ꢀ ꢌꢅꢍꢆꢀ ꢀ ꢀ ꢎꢊꢏꢐꢑꢆꢑꢊꢏꢍꢀ
ꢒꢑ ꢀ
ꢀꢌꢈꢓꢀ
ꢀ ꢒꢂꢔ
ꢀ ꢕꢏꢑꢆ
ꢖꢊꢋꢋꢅꢎꢆꢊꢃꢗꢉꢂꢍꢅꢀꢉꢃꢅꢂꢘꢐꢊꢙꢏꢀꢚꢊꢋꢆꢂꢛꢅꢀ ꢀ
ꢖꢊꢋꢋꢅꢎꢆꢊꢃꢗꢅꢄꢑꢆꢆꢅꢃꢀꢉꢃꢅꢂꢘꢐꢊꢙꢏꢀꢚꢊꢋꢆꢂꢛꢅꢀ ꢀ
ꢜꢄꢑꢆꢆꢅꢃꢗꢉꢂꢍꢅꢀꢉꢃꢅꢂꢘꢐꢊꢙꢏꢀꢚꢊꢋꢆꢂꢛꢅꢀ
ꢖꢊꢋꢋꢅꢎꢆꢊꢃꢀꢎꢝꢆꢗꢊꢞꢞꢀꢎꢝꢃꢃꢅꢏꢆꢀ ꢀ
V
(BR)CBO
I
C
=-10ꢀA,I
E
=0
V
(BR)CEO
I
C
=-10mA,I
B
=0
V
(BR)EBO
I
E
=-10ꢀA,I
C
=0
-80
-65
-5
V
V
V
I
CBO
I
EBO
h
FE
V
CB
=-30
V
,
I
E
=0
-15
nA
nA
ꢜꢄꢑꢆꢆꢅꢃꢀꢎꢝꢆꢗꢊꢞꢞꢀꢎꢝꢃꢃꢅꢏꢆꢀ ꢀ
V
EB
=-5
V
,
I
C
=0
-100
ꢟꢖꢀꢎꢝꢃꢃꢅꢏꢆꢀꢛꢂꢑꢏꢀ
V
CE
=-5
V
,
I
C
=-2mA
110
100
I
C
=-10mA, I
B
=-0.5mA
I
C
=-100mA, I
B
=-5mA *
I
C
=-10mA, I
B
=-0.5mA
V
CB
=-10
V
,
f
= 1MHz, I
E
= 0
V
CE
=-5
V
,
I
C
=-10mA, f= 100MHz
-0.1
-0.3
V
V
ꢖꢊꢋꢋꢅꢎꢆꢊꢃꢗꢅꢄꢑꢆꢆꢅꢃꢀꢍꢂꢆꢝꢃꢂꢆꢑꢊꢏꢀꢚꢊꢋꢆꢂꢛꢅꢀ
V
CE(sat)
ꢠꢂꢍꢅꢗꢅꢄꢑꢆꢆꢅꢃꢀꢍꢂꢆꢝꢃꢂꢆꢑꢊꢏꢀꢚꢊꢋꢆꢂꢛꢅꢀ
ꢡꢝꢆꢓꢝꢆꢀꢖꢂꢓꢂꢎꢑꢆꢂꢏꢎꢅꢀ
V
BE(sat)
C
obo
f
T
0.7
V
2.5
pF
MHz
ꢖꢝꢃꢃꢅꢏꢆꢀꢢꢂꢑꢏꢗꢠꢂꢏꢐꢙꢑꢐꢆꢣꢀꢁꢃꢊꢐꢝꢎꢆꢀ
ꢤ
pulse test
:
PW
ꢀ
350μS
,
ꢁ
ꢀ
2%
.
第 1 页 共 3 页
Rev : B
X• T ELECTRONICS
ꢀꢁꢂꢃꢄꢅꢆ
DUAL TRANSISTOR (PNP+PNP)
Typical Characteristics
h
FE
—— I
C
Static Characteristic
-8
-6
-4
-2
-0
1000
100
10
COMMON
EMITTER
T
a
=25
ć
-30uA
-27uA
-24uA
-21uA
-18uA
-15uA
-12uA
-9uA
-6uA
T
a
=100
ć
T
a
=25
ć
COMMON EMITTER
V
CE
= -5V
I
B
=-3uA
-0
-2
-4
-6
-8
-0.1
-1
-10
-100
-100
-100
150
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
V
CEsat
—— I
C
V
BEsat
——
I
C
-1
-2
-1
T
a
=25
ć
T
a
=100
ć
-0.1
T
a
=100
ć
T
a
=25
ć
ꢀ=20
ꢀ=20
-0.01
-0.1
-0.1
-0.1
-1
-10
-100
-1.2
-20
-1
-10
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
I
C
——
V
BE
I
C
f
T
——
-100
500
T
a
=100
ć
-10
100
T
a
=25
ć
-1
COMMON EMITTER
V
CE
=-5V
T
a
=25
ć
COMMON EMITTER
V
CE
=-5V
-0.1
-0.0
10
-0.1
-0.3
-0.6
-0.9
-1
-10
BASE-EMMITER VOLTAGE
V
BE
(V)
COLLECTOR CURRENT
I
C
(mA)
C
ob
/ C
ib
—— V
CB
/ V
EB
P
C
—— T
a
250
200
150
100
50
30
10
f=1MHz
I
E
=0/I
C
=0
T
a
=25
ć
C
ib
C
ob
1
-0.1
0
10
ꢀ
0
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
-1
-10
0
25
50
75
125
REVERSE VOLTAGE
V
R
(V)
AMBIENT TEMPERATURE
T
a
(
ć
)
第 2 页 共 3 页
Rev : B
X• T ELECTRONICS
ꢀꢁꢂꢃꢄꢅꢆ
DUAL TRANSISTOR (PNP+PNP)
ꢀꢁꢂꢃꢄꢅꢄꢆꢇꢈꢉꢊꢈꢋꢌꢆꢁꢍꢎꢏꢐꢑꢌꢆꢒꢐꢓꢌꢑꢔꢐꢕꢑꢔꢆ
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
1.100
0.100
1.000
0.350
0.150
2.200
1.350
2.4
ꢀꢀ
Min
Max
A
A1
A2
b
0.900
0.000
0.900
0.150
0.
ꢀꢀ
2.000
1.150
2.150
0.035
0.000
0.035
0.006
0.00
#
0.079
0.045
0.085
0.043
0.004
0.039
0.014
0.006
0.087
0.053
0.09
#
c
D
E
E1
e
0.650 T
Y
P
0.525 REF
0.026 T
Y
P
0.021 REF
e1
L
1.200
1.400
0.047
0.055
L1
ꢀ
0.260
0°
0.460
8°
0.010
0°
0.018
8°
ꢀꢁꢂꢃꢄꢅꢄ ꢀꢍꢋꢋꢌꢔꢎꢌꢖꢆꢇꢈꢖꢆꢗꢈꢘꢕ
ꢍ
ꢀ
ꢎ
第 3 页 共 3 页
Rev : B
