XZT-MMBT3904
| Part # | XZT-MMBT3904 |
Download  | XZT-MMBT3904 |
X• T ELECTRONICS
MMBT3904
TRANSISTOR (NPN)
FEATURES
SOT-23
z
z
Epitaxial planar die construction
Complementary PNP Type available(
MMBT3906
)
3
Marking: 1
AM
MAXIMUM RATINGS
(T
a
=25
℃
unless otherwise noted)
1
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Collector-Base Voltage
Value
60
Unit
V
1. BASE
2
2.EMITTER
Collector-Emitter Voltage
40
V
3.COLLECTOR
Emitter-Base Voltage
6
V
Collector Current
200
200
625
mA
mW
℃
/W
P
C
Collector Power Dissipation
Thermal Resistance From Junction
T
o
A
mbient
R
Θ
JA
Operation Junction
and
Storage Temperature Range
T
J
,
T
stg
-55
～
+150
℃
ELECTRICAL CHARACTERISTICS (T
a
=25
℃
unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
60
40
6
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
(BR)CBO
I
C
=10µA, I
E
=0
V
(BR)CEO
I
C
=1mA, I
B
=0
V
(BR)EBO
I
E
=10µA, I
C
=0
V
V
I
CEX
V
CE
=30
V
,
V
EB(off)
=3V
50
nA
Collector cut-off current
Emitter cut-off current
I
CBO
I
EBO
V
CB
= 60
V
,
I
E
=0
V
EB
=5
V
,
I
C
=0
100
100
300
nA
nA
h
FE(1)
h
FE(2)
h
FE(3)
V
CE(sat)
V
BE(sat)
f
T
V
CE
=1
V
,
I
C
=10mA
100
60
DC current gain
V
CE
=1
V
,
I
C
=50mA
V
CE
=1
V
,
I
C
=100mA
I
C
=50mA, I
B
=5mA
30
Collector-emitter saturation voltage
Base
-emitter saturation voltage
Transition frequency
0.3
V
I
C
=50mA, I
B
=5mA
0.95
V
V
CE
=20
V
,
I
C
=10mA, f=100MHz
300
MHz
V
CC
=3
V
, V
BE(off)
=-0.5V I
C
=10mA,
I
B1
=1mA
CC
=3
V
, V
BE(off)
=-0.5V I
C
=10mA,
Delay time
Rise time
t
d
t
r
35
35
ns
V
ns
I
B1
=1mA
Storage time
Fall time
t
s
t
f
V
CC
=3
V
,
I
C
=10mA, I
B1
= I
B2
=1mA
V
CC
=3
V
,
I
C
=10mA, I
B1
= I
B2
=1mA
200
50
ns
ns
CLASSIFICATION OF
h
FE(1)
HFE
100-300
RANK
RANGE
L
H
100
–
200
200
–
300
第 1 页 共 3 页
Rev : B
X• T ELECTRONICS
MMBT3904
TRANSISTOR (NPN)
Typical Characteristics
h
FE
—— I
C
Static Characteristic
100
80
60
40
20
0
400
300
200
100
0
COMMON EMITTER
V
CE
=1V
COMMON
EMITTER
T
a
=25
℃
500uA
450uA
T
a
=100
℃
400uA
350uA
300uA
T
a
=25
℃
250uA
200uA
150uA
100uA
I
B
=50uA
0.1
0.3
1
3
10
30
100
0
4
8
12
16
20
200
1.2
60
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
I
C
V
BEsat
——
V
CEsat
—— I
C
1.2
0.8
0.4
600
300
T
a
=25
℃
T
a
=100
℃
100
T
a
=100
℃
T
a
=25
℃
30
10
β=10
β=10
0.0
1
3
10
30
100
1
3
10
100
300
30
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
I
C
—— V
BE
C
ob
/ C
ib
——
V
CB
/ V
EB
9
100
COMMON EMITTER
V
CE
=1V
f=1MHz
I
E
=0/I
C
=0
30
10
T
a
=25
℃
C
ib
T
a
=100
℃
3
3
1
C
ob
T
a
=25
℃
0.3
0.1
1
0.1
0.3
1
3
10
20
0.2
0.4
0.6
0.8
1.0
REVERSE VOLTAGE
V
(V)
BASE-EMI
T
TER VOLTAGE
V
BE
(V)
P
C
—— T
a
f
T
—— I
C
300
250
V
CE
=20V
T
a
=25
℃
200
150
100
50
200
100
0
1
3
10
0
25
50
75
100
125
150
30
COLLECTOR CURRENT
I
C
(mA)
AMBIENT TEMPERATURE
T
a
(
℃
)
第 2 页 共 3 页
Rev : B
X• T ELECTRONICS
MMBT3904
TRANSISTOR (NPN)
SO
T
-23 Package Outline Dimensions
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
Min
Max
0.045
0.004
0.041
0.020
0.006
0.118
0.055
0.100
A
A1
A2
b
c
D
E
E1
e
e1
L
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
0.950 T
Y
P
0.550 REF
0.037 T
Y
P
0.022 REF
1.800
2.000
0.071
0.079
L1
θ
0.300
0°
0.500
8°
0.012
0°
0.020
8
°
SO
T
-23 Suggested Pad Layout
第 3 页 共 3 页
Rev : B
