XZT-MMBT3906
| Part # | XZT-MMBT3906 |
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X• T ELECTRONICS
MMBT3906
TRANSISTOR (PNP)
FEATURES
SOT-23
z
z
Epitaxial planar die construction
Complementary NPN Type available
(
MMBT3904
)
3
Marking: 2A
1
MAXIMUM RATINGS
(T
a
=25
℃
unless otherwise noted)
1. BASE
2
Symbol
V
CBO
V
CEO
V
EBO
I
C
Para
meter
Collector-Base Voltage
Value
-40
Unit
V
2.EMITTER
3.COLLECTOR
Collector-Emitter Voltage
Emitter-Base Voltage
-40
V
-5
V
Collector Current -Continuous
Collector Dissipation
-0.2
0.2
A
P
C
W
R
θ
Thermal resistance junction to ambient
625
℃
/W
℃
JA
T
J
,
T
stg
Operation Junction
and Storage Temperature Range
-55~+150
ELECTRICAL CHARACTERISTICS (T
a
=25
℃
unless otherwise specified)
Parameter
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
Test
conditions
MIN
-40
-40
-5
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
I
C
=-10
μ
A, I
E
=0
I
C
= -1mA,
I
B
=0
V
I
E
= -10
μ
A, I
C
=0
V
V
CB
= -40
V
,
I
E
=0
-100
-50
nA
nA
nA
Collector cut-off current
I
CEX
V
CE
=-30
V
,
V
BE(off)
=-3V
V
EB
= -5
V
,
I
C
=0
Emitter cut-off current
I
EBO
-100
300
h
FE1
V
CE
=-1
V
,
I
C
= -10mA
V
CE
= -1
V
, I
C
=-50mA
V
CE
= –
2
V
,
I
C
=-100mA
I
C
=-50mA, I
B
=-5mA
I
C
= -50mA, I
B
=-5mA
100
60
DC current gain
h
FE2
h
FE3
30
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Delay Time
V
CE(sat)1
V
BE(sat)
f
T
-0.3
V
V
-0.95
V
CE
=-20
V
,
I
C
=-10mA,f=100MHz
300
MHz
nS
nS
nS
nS
td
35
35
V
CC
=-3
V
,
V
BE
=-0.5V
I
C
=-10mA, I
B1
=I
B2
=-1mA
Rise Time
tr
Storage Time
ts
225
75
V
CC
=-3
V
,
I
C
=-10mA
I
B1
=I
B2
=-1mA
Fall Time
tf
CLASSIFICATION OF
h
FE(1)
HFE
100-300
RANK
RANGE
L
H
100
–
200
200
–
300
第 1 页 共 3 页
Rev : B
X• T ELECTRONICS
MMBT3906
TRANSISTOR (PNP)
Typical Characteristics
h
FE
—— I
C
Static Characteristic
-100
-80
-60
-40
-20
-0
300
200
100
0
COMMON EMITTER
COMMON
EMITTER
T
a
=25
℃
V
CE
=-1V
-500uA
-450uA
-400uA
T
a
=100
℃
-350uA
-300uA
T
a
=25
℃
-250uA
-200uA
-150uA
-100uA
I
B
=-50uA
-0.1
-1
-3
-10
-100
-0
-4
-8
-12
-16
-20
-200
-1.2
-0.3
-30
-200
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
I
C
V
BEsat
——
V
CEsat
—— I
C
-1.2
-0.8
-0.4
-500
-300
T
a
=25
℃
T
a
=100
℃
T
a
=25
℃
-100
T
a
=100
℃
-30
-10
β
=10
β
=10
-0.0
-1
-3
-10
-30
-100
-1
-3
-10
-100
-200
-30
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
I
C
—— V
BE
C
ob
/ C
ib
——
V
CB
/ V
EB
9
-100
COMMON EMITTER
V
CE
=-1V
f=1MHz
I
E
=0/I
C
=0
-30
-10
T
a
=25
℃
C
ob
C
ib
T
a
=100
℃
-3
-1
3
T
a
=25
℃
-0.3
-0.1
1
-0.1
-0.3
-1
-3
-10
-20
-0.2
-0.4
-0.6
-0.8
-1.0
REVERSE VOLTAGE
V
(V)
BASE-EMI
T
TER VOLTAGE
V
BE
(V)
f
T
—— I
C
P
C
—— T
a
600
250
V
CE
=-20V
T
a
=25
℃
200
150
100
50
400
200
0
-1
-3
-10
0
25
50
75
100
125
150
-50
-30
COLLECTOR CURRENT
I
C
(mA)
AMBIENT TEMPERATURE
T
a
(
℃
)
第 2 页 共 3 页
Rev : B
X• T ELECTRONICS
MMBT3906
TRANSISTOR (PNP)
SO
T
-23 Package Outline Dimensions
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
Min
Max
0.045
0.004
0.041
0.020
0.006
0.118
0.055
0.100
A
A1
A2
b
c
D
E
E1
e
e1
L
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
0.950 T
Y
P
0.550 REF
0.037 T
Y
P
0.022 REF
1.800
2.000
0.071
0.079
L1
θ
0.300
0°
0.500
8°
0.012
0°
0.020
8
°
SO
T
-23 Suggested Pad Layout
第 3 页 共 3 页
Rev : B
