XZT-MMBT4401
| Part # | XZT-MMBT4401 |
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X• T ELECTRONICS
MMBT4401
TRANSISTOR (NPN)
FEATURES
SOT-23
z
z
Epitaxial planar die construction
Switching Transistor
3
Marking: 2X
1
MAXIMUM RATINGS
(T
a
=25
℃
unless otherwise noted)
1. BASE
2
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Collector-Base Voltage
Value
60
Unit
V
2.EMITTER
3.COLLECTOR
Collector-Emitter Voltage
40
V
Emitter-Base Voltage
6
V
Collector Current
600
300
417
mA
mW
℃
/W
P
C
Collector Power Dissipation
Thermal Resistance From Junction
T
o
A
mbient
R
Θ
JA
Operation Junction
and
Storage Temperature Range
℃
T
J
,
T
stg
-55
～
+150
ELECTRICAL CHARACTERISTICS (T
a
=25
℃
unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
60
40
6
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
(BR)CBO
I
C
=100
μ
A,I
E
=0
V
(BR)CEO
I
C
=1mA,I
B
=0
V
(BR)EBO
I
E
=100
μ
A ,I
C
=0
V
V
I
CBO
I
CEX
I
EBO
h
FE1
h
FE2
h
FE3
h
FE4
h
FE5
V
CB
=50
V
,
I
E
=0
0.1
0.1
0.1
μ
A
μ
A
μ
A
Collector cut-off current
V
CE
=35V, V
EB
=0.4V
V
EB
=5
V
,
I
C
=0
Emitter cut-off current
V
CE
=1
V
,
I
C
=0.1mA
V
CE
=1
V
,
I
C
=1mA
20
40
DC current gain
V
CE
=1
V
,
I
C
=10mA
V
CE
=1
V
,
I
C
=150mA
V
CE
=2
V
,
I
C
=500mA
I
C
=150mA,I
B
=15mA
I
C
=500mA,I
B
=50mA
I
C
=150mA,I
B
=15mA
I
C
=500mA,I
B
=50mA
V
CE
=10
V
,
I
C
=20mA,f =100MHz
V
CC
=30V, V
BE(off)
=-2V
I
C
=150mA , I
B1
=15mA
V
CC
=30V, I
C
=150mA
I
B1
=I
B2
=15mA
80
100
40
300
0.4
0.75
0.95
1.2
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE(sat)
V
V
BE(sat
）
V
Transition frequency
Delay time
f
T
t
d
t
r
250
MHz
ns
ns
ns
ns
15
20
Rise time
Storage time
Fall time
t
s
t
f
225
6
0
第 1 页 共 3 页
Rev : B
X• T ELECTRONICS
MMBT4401
TRANSISTOR (NPN)
Typical Characteristics
Static Characteristic
h
FE
——
I
C
250
200
150
100
50
1000
COMMON
EMITTER
T
a
=25
℃
COMMON EMITTER
V
CE
= 1V
1mA
T
a
=100
℃
0.9mA
0.8mA
T
a
=25
℃
0.7mA
0.6mA
100
0.5mA
0.4mA
0.3mA
0.2mA
I
B
=0.1mA
0
10
600
0
1
2
3
4
1
10
100
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
V
CEsat
——
I
C
V
BEsat
——
I
C
1000
1000
800
600
400
200
0
β
=10
β
=10
T
a
=25
℃
T
a
=100
℃
100
T
a
=100
℃
T
a
=25
℃
10
0.5
600
0.1
1
10
100
0.1
1
10
100
600
COLLECTOR CURREMT
I
C
(mA)
COLLECTOR CURREMT
I
C
(mA)
I
C
—— V
BE
f
T
—— I
C
500
600
COMMON EMITTER
CE
=1V
COMMON EMITTER
CE
=10V
T
a
=25
℃
V
V
100
10
1
100
0.1
10
0
200
400
600
800
1000
1200
10
20
30
40
COLLECTOR CURRENT
I
C
(mA)
BASE-EMMITER VOLTAGE
V
BE
(mV)
P
C
—— T
a
C
ob
/C
ib
——
V
CB
/V
EB
400
300
200
100
0
100
f=1MHz
I
E
=0/I
C
=0
T
a
=25
℃
C
ib
10
C
ob
1
0.1
0
25
50
75
100
125
150
30
1
REVERSE VOLTAGE
10
AMBIENT TEMPERATURE
T
a
(
℃
)
V
(V)
第 2 页 共 3 页
Rev : B
X• T ELECTRONICS
MMBT4401
TRANSISTOR (NPN)
SO
T
-23 Package Outline Dimensions
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
Min
Max
0.045
0.004
0.041
0.020
0.006
0.118
0.055
0.100
A
A1
A2
b
c
D
E
E1
e
e1
L
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
0.950 T
Y
P
0.550 REF
0.037 T
Y
P
0.022 REF
1.800
2.000
0.071
0.079
L1
θ
0.300
0°
0.500
8°
0.012
0°
0.020
8
°
SO
T
-23 Suggested Pad Layout
第 3 页 共 3 页
Rev : B
