XZT-MMBT4403

Part #	XZT-MMBT4403
Download	XZT-MMBT4403

X• T ELECTRONICS

MMBT4403

TRANSISTOR (PNP)

FEATURES

SOT-23

z

z

Epitaxial planar die construction

Switching Transistor

3

Marking: 2T

1

MAXIMUM RATINGS

(T

a

=25

℃

unless otherwise noted)

1. BASE

Symbol

V

CBO

V

CEO

V

EBO

I

C

Parameter

Value

-40

Unit

V

2

2.EMITTER

Collector-Base Voltage

3.COLLECTOR

V

Collector-Emitter Voltage

-40

V

Emitter-Base Voltage

-5

Collector Current

-600

300

417

mA

mW

℃

/W

Collector Power Dissipation

Thermal Resistance From Junction

T

o Ambient

P

C

R

ΘJA

Operation Junction

and

Storage Temperature Range

T

j

,

T

stg

-55

～

+150

℃

ELECTRICAL CHARACTERISTICS (T

a

=25

℃

unless otherwise specified)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

V

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V

(BR)CBO

I

C

=-100

μ

A,I

E

=0

V

(BR)CEO

I

C

=-1mA,I

B

=0

V

(BR)EBO

I

E

=-100

μ

A ,I

C

=0

-40

-40

-5

V

V

I

CBO

I

CEX

I

EBO

h

FE1

h

FE2

h

FE3

h

FE4

h

FE5

V

CB

=-35

V

,

I

E

=0

-0.1

-0.1

-0.1

μ

A

μ

A

μ

A

Collector cut-off current

V

CE

=-35V, V

BE

=0.4V

V

EB

=-4

V

,

I

C

=0

Emitter cut-off current

V

CE

=-1

V

,

I

C

=-0.1mA

V

CE

=-1

V

,

I

C

=-1mA

3

0

6

0

DC current gain

V

CE

=-1

V

,

I

C

=-10mA

V

CE

=-2

V

,

I

C

=-150mA

V

CE

=-2

V

,

I

C

=-500mA

I

C

=-150mA,I

B

=-15mA

I

C

=-500mA,I

B

=-50mA

I

C

=-150mA,I

B

=-15mA

I

C

=-500mA,I

B

=-50mA

V

CE

=-10

V

,

I

C

=-20mA,f =100MHz

V

CC

=-30V, V

BE(off)

=-0.5V

I

C

=-150mA , I

B1

=-15mA

V

CC

=-30V, I

C

=-150mA

I

B1

=I

B2

=-15mA

10

0

100

2

0

300

-0.4

-0.75

-0.95

-1.3

V

V

Collector-emitter saturation voltage

Base-emitter saturation voltage

V

CE(sat)

V

V

BE(sat

）

V

Transition frequency

Delay time

f

T

t

d

t

r

200

MHz

n

s

n

s

n

s

n

s

15

20

Rise time

Storage time

Fall time

t

s

t

f

225

6

0

http://www.xt-elec.com

第 1 页共 3 页

Rev : B

X• T ELECTRONICS

MMBT4403

TRANSISTOR (PNP)

Typical Characteristics

h

FE

—— I

C

Static Characteristic

-250

-200

-150

-100

-50

1000

COMMON

EMITTER

T

a

=25

℃

COMMON EMITTER

V

CE

=-2V

T

a

=100

℃

-1mA

-0.9mA

-0.8mA

-0.7mA

-0.6mA

-0.5mA

-0.4mA

T

a

=25

℃

100

-0.3mA

-0.2mA

I

B

=-0.1mA

-0

10

-600

-1

-10

-100

-0

-2

-4

-6

COLLECTOR CURRENT

I

C

(mA)

COLLECTOR-EMITTER VOLTAGE

V

CE

(V)

I

C

V

BEsat

——

V

CEsat

—— I

C

-1.2

-700

-300

β

=10

β

=10

T

a

=25

℃

-0.8

-0.4

-0.0

T

a

=100

℃

-100

-30

T

a

=100

℃

T

a

=25

℃

-10

-3

-3

-1

-10

-30

-100

-600

-1.2

-30

-1

-10

-30

-100

-600

COLLECTOR CURRENT

I

C

(mA)

COLLECTOR CURRENT

I

C

(mA)

I

C

—— V

BE

C

ob

/ C

ib

——

V

CB

/ V

EB

50

-600

-100

f=1MHz

COMMON EMITTER

V

CE

=-2V

I

E

=0/I

C

=0

T

a

=25

℃

C

ib

C

ob

10

T

a

=100

℃

-10

-1

T

a

=25

℃

1

1

-0.1

-0.0

-0.1

-1

-10

-30

-0.4

-0.8

REVERSE VOLTAGE

V

(V)

BASE-EMMITER VOLTAGE

V

BE

(V)

f

T

—— I

C

P

C

—— T

a

400

300

200

100

0

-600

V

CE

=-10V

T

a

=25

℃

-100

-10

-1

-3

-10

0

25

50

75

100

125

150

COLLECTOR CURRENT

I

C

(mA)

AMBIENT TEMPERATURE

T

a

(

℃

)

http://www.xt-elec.com

第 2 页共 3 页

Rev : B

X• T ELECTRONICS

MMBT4403

TRANSISTOR (PNP)

SO

T

-23 Package Outline Dimensions

Dimensions In Millimeters

Dimensions In Inches

Symbol

Min

Max

1.150

0.100

1.050

0.500

0.150

3.000

1.400

2.550

Min

Max

0.045

0.004

0.041

0.020

0.006

0.118

0.055

0.100

A

A1

A2

b

c

D

E

E1

e

e1

L

0.900

0.000

0.900

0.300

0.080

2.800

1.200

2.250

0.035

0.000

0.035

0.012

0.003

0.110

0.047

0.089

0.950 T

Y

P

0.550 REF

0.037 T

Y

P

0.022 REF

1.800

2.000

0.071

0.079

L1

θ

0.300

0°

0.500

8°

0.012

0°

0.020

8

°

SO

T

-23 Suggested Pad Layout

http://www.xt-elec.com

第 3 页共 3 页

Rev : B