XZT-MMDT3906
| Part # | XZT-MMDT3906 |
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X• T ELECTRONICS
MMDT3906
DUAL TRANSISTOR (PNP+PNP)
FEATURES
SOT-
36
3
z
z
Epitaxial planar die construction
Ideal for low power amplification and switching
6
5
4
MAKING: K3N
K3N
1
2
3
1. Emitter1
2. Base1
3. Collector2
4. Emitter2
5. Base2
Maximum Ratings @Ta=25
℃
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Value
-40
-40
-5
Units
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
6. Collector1
V
Collector Current -Continuous
Collector Power Dissipation
-0.2
0.2
A
P
C
W
Operation Junction
and
Storage Temperature Range
-55
~+
150
℃
T
J
,
T
stg
ELECTRICAL CHARACTERISTICS(T
a
=25
℃
unless otherwise specified)
Symbol
T
e
st
conditions
Min
-40
-40
-5
Parameter
Typ
Max
Unit
V
V
(BR)CBO
I
C
=-10μA,I
E
=0
V
(BR)CEO
I
C
=-1mA,I
B
=0
V
(BR)EBO
I
E
=-10μA,I
C
=0
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
I
CEX
I
EBO
V
CE
=-30
V
,
V
EB(OFF)
=-3V
-50
-50
nA
nA
V
EB
=-5
V
,
I
C
=0
Base cut-off current
h
FE(1)
h
FE(2)
h
FE(3)
h
FE(4)
h
FE(5)
V
CE
=-1
V
,
I
C
=-0.1mA
V
CE
=-1
V
,
I
C
=-1mA
V
CE
=-1
V
,
I
C
=-10mA
V
CE
=-1
V
,
I
C
=-50mA
V
CE
=-1
V
,
I
C
=-100mA
60
80
DC current gain
100
60
300
30
V
CE(sat)1
I
C
=-10mA,I
B
=-1mA
V
CE(sat)2
I
C
=-50mA,I
B
=-5mA
V
BE(sat)1
I
C
=-10mA,I
B
=-1mA
V
BE(sat)2
I
C
=-50mA,I
B
=-5mA
-0.25
-0.4
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
-0.65
250
-0.85
-0.95
V
V
f
T
C
ob
NF
t
d
V
CE
=-20
V
,
I
C
=-10mA,f=100MHz
Transition frequency
Collector output capacitance
Noise figure
MHz
pF
dB
nS
nS
nS
nS
V
CB
=-5
V
,
I
E
=0,f=1MHz
4.5
4
V
CE
=-5
V
,
I
c
=-0.1mA,f=1
K
Hz,R
g
=1KΩ
Delay time
35
35
225
75
V
CC
=-3
V
,
V
BE
=0.5V
I
C
=-10mA , I
B1
=-I
B2
=-1mA
t
r
Rise time
t
S
Storage time
V
CC
=-3
V
,
I
C
=-10mA
I
B1
=-I
B2
=- 1mA
t
f
Fall time
第 1 页 共 3 页
Rev : B
X• T ELECTRONICS
MMDT3906
DUAL TRANSISTOR (PNP+PNP)
Typical Characteristics
h
FE
—— I
C
Static Characteristic
-100
-80
-60
-40
-20
-0
300
200
100
0
COMMON EMITTER
V
CE
=-1V
COMMON
EMITTER
T
a
=25
℃
-500uA
-450uA
-400uA
T
a
=100
℃
T
a
=25
℃
-350uA
-300uA
-250uA
-200uA
-150uA
-100uA
I
B
=-50uA
-0.1
-1
-3
-10
-100
-0
-4
-8
-12
-16
-20
-200
-1.2
-0.3
-30
-200
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
I
C
V
BEsat
——
V
CEsat
—— I
C
-1.2
-0.8
-0.4
-500
-300
T
a
=25
℃
T
a
=100
℃
T
a
=25
℃
-100
T
a
=100
℃
-30
-10
β=10
β=10
-0.0
-1
-3
-10
-30
-100
-1
-3
-10
-100
-200
-30
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
I
C
—— V
BE
C
ob
/ C
ib
——
V
CB
/ V
EB
9
-100
COMMON EMITTER
V
CE
=-1V
f=1MHz
I
E
=0/I
C
=0
-30
-10
T
a
=25
℃
C
ob
C
ib
T
a
=100
℃
-3
-1
3
T
a
=25
℃
-0.3
-0.1
1
-0.1
-0.3
-1
-3
-10
-20
-0.2
-0.4
-0.6
-0.8
-1.0
REVERSE VOLTAGE
V
(V)
BASE-EMMITER VOLTAGE
V
BE
(V)
f
T
—— I
C
P
C
—— T
a
600
250
V
CE
=-20V
T
a
=25
℃
200
150
100
50
400
200
0
-1
-3
-10
0
25
50
75
100
125
150
-50
-30
COLLECTOR CURRENT
I
C
(mA)
AMBIENT TEMPERATURE
T
a
(
℃
)
第 2 页 共 3 页
Rev : B
X• T ELECTRONICS
MMDT3906
DUAL TRANSISTOR (PNP+PNP)
ꢀꢁꢂꢃꢄꢅꢄꢆꢇꢈꢉꢊꢈꢋꢌꢆꢁꢍꢎꢏꢐꢑꢌꢆꢒꢐꢓꢌꢑꢔꢐꢕꢑꢔꢆ
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
1.100
0.100
1.000
0.350
0.150
2.200
1.350
2.4
ꢀꢀ
Min
Max
A
A1
A2
b
0.900
0.000
0.900
0.150
0.
ꢀꢀ
2.000
1.150
2.150
0.035
0.000
0.035
0.006
0.00
#
0.079
0.045
0.085
0.043
0.004
0.039
0.014
0.006
0.087
0.053
0.09
#
c
D
E
E1
e
0.650 T
Y
P
0.525 REF
0.026 T
Y
P
0.021 REF
e1
L
1.200
1.400
0.047
0.055
L1
ꢀ
0.260
0°
0.460
8°
0.010
0°
0.018
8°
ꢀꢁꢂꢃꢄꢅꢄ ꢀꢍꢋꢋꢌꢔꢎꢌꢖꢆꢇꢈꢖꢆꢗꢈꢘꢕ
ꢍ
ꢀ
ꢎ
第 3 页 共 3 页
Rev : B
