XZT-S9013

Part #	XZT-S9013
Download	XZT-S9013

X• T ELECTRONICS

S9013

TRANSISTOR (NPN)

FEATURES

SOT-23

z

z

z

High Collector Current

Complementary

T

o

S

9012

Excellent h

FE

Linearity

3

Marking: J3

1

1. BASE

2

2.EMITTER

MAXIMUM RATINGS

(T

a

=25

℃

unless otherwise noted)

3.COLLECTOR

Symbol

V

CBO

V

CEO

V

EBO

I

C

Parameter

Value

40

Unit

V

Collector-Base Voltage

V

Collector-Emitter Voltage

25

V

Emitter-Base Voltage

5

Collector Current

500

300

416

mA

mW

℃

/W

P

C

Collector Power Dissipation

Thermal Resistance From Junction

T

o

A

mbient

R

Θ

JA

Operation Junction

and

Storage Temperature Range

T

J

,

T

stg

-55

～

+150

℃

ELECTRICAL CHARACTERISTICS (T

a

=25

℃

unless otherwise specified)

Parameter

Symbol

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

Test

conditions

Min

40

25

5

Typ

Max

Unit

V

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I

C

=0.1mA, I

E

=0

I

C

=1mA, I

B

=0

V

I

E

=0.1mA, I

C

=0

V

V

CB

=40

V

,

I

E

=0

0.1

0.1

0.1

400

uA

uA

uA

Collector cut-off current

I

CEO

V

CE

=20

V

,

I

B

=0

Emitter cut-off current

I

EBO

V

EB

=5

V

,

I

C

=0

h

FE(1)

h

FE(2)

V

CE(sat)

V

BE(sat)

V

BE

V

CE

=1

V

,

I

C

=50mA

V

CE

=1

V

,

I

C

=500mA

I

C

=500mA, I

B

=50mA

I

C

=500mA, I

B

=50mA

V

CB

=1

V

,

I

C

=10mA,

V

CE

=6

V

,

I

C

=20mA, f=30MHz

V

CB

=6

V

,

I

E

=0, f=1MHz

120

40

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Base-emitter voltage

0.6

1.2

0.7

V

V

V

Transition frequency

f

T

150

MHz

pF

Collector output capacitance

C

ob

8

CLASSIFICATION OF

h

FE(1)

RANK

L

H

J

RANGE

120-200

200-350

300-400

http://www.xt-elec.com

第 1 页共 3 页

Rev : B

X• T ELECTRONICS

S9013

TRANSISTOR (NPN)

Typical Characteristics

h

FE

—— I

C

Static Characteristic

100

80

60

40

20

0

1000

COMMON EMITTER

V

CE

=1V

COMMON

EMITTER

T

a

=25

℃

400uA

350uA

300uA

250uA

200uA

T

a

=100

℃

T

a

=25

℃

100

150uA

100uA

I

B

=50uA

10

1

3

10

30

100

500

0

4

8

12

16

20

COLLECTOR CURRENT

I

C

(mA)

COLLECTOR-EMITTER VOLTAGE

V

CE

(V)

I

C

V

BEsat

——

V

CEsat

—— I

C

1.2

500

300

T

a

=25

℃

0.8

0.4

100

T

a

=100

℃

T

a

=100

℃

T

a

=25

℃

30

10

β

=10

500

β

=10

0.0

30

10

500

3

1

3

10

30

100

1

100

COLLECTOR CURRENT

I

C

(mA)

COLLECTOR CURRENT

I

C

(mA)

I

C

—— V

BE

C

ob

/ C

ib

——

V

CB

/ V

EB

100

100

COMMON EMITTER

V

CE

=1V

f=1MHz

I

E

=0/ I

C

=0

30

10

T

a

=25

℃

C

ib

30

10

T

a

=100

℃

C

ob

3

1

T

a

=25

℃

3

1

0.3

0.1

0.1

0.3

1

3

10

20

0.0

0.2

0.4

0.6

0.8

1.0

REVERSE VOLTAGE

V

(V)

BASE-EMMITER VOLTAGE

V

BE

(V)

P

C

—— T

a

f

T

—— I

C

1000

400

V

CE

=6V

T

a

=25

℃

300

200

100

0

300

100

10

10

30

100

0

25

50

75

100

125

150

COLLECTOR CURRENT

I

C

(mA)

AMBIENT TEMPERATURE

T

a

(

℃

)

http://www.xt-elec.com

第 2 页共 3 页

Rev : B

X• T ELECTRONICS

S9013

TRANSISTOR (NPN)

SO

T

-23 Package Outline Dimensions

Dimensions In Millimeters

Dimensions In Inches

Symbol

Min

Max

1.150

0.100

1.050

0.500

0.150

3.000

1.400

2.550

Min

Max

0.045

0.004

0.041

0.020

0.006

0.118

0.055

0.100

A

A1

A2

b

c

D

E

E1

e

e1

L

0.900

0.000

0.900

0.300

0.080

2.800

1.200

2.250

0.035

0.000

0.035

0.012

0.003

0.110

0.047

0.089

0.950 T

Y

P

0.550 REF

0.037 T

Y

P

0.022 REF

1.800

2.000

0.071

0.079

L1

θ

0.300

0°

0.500

8°

0.012

0°

0.020

8

°

SO

T

-23 Suggested Pad Layout

http://www.xt-elec.com

第 3 页共 3 页

Rev : B