Yangzhou-Yangjie-Elec-Tech-BSS138W

RoHS  

COMPLIANT  

BSS138W  

N-Channel Enhancement Mode Field Effect Transistor  

Product Summary  

● V

DS  

50V  

● I

D  

340mA  

● R

DS(ON)

( at V

GS

=10V)  

● R

DS(ON)

( at V

GS

=4.5V)  

＜

2.5ohm  

＜

3.0ohm  

General Description  

● Trench Power MV MOSFET technology  

● Voltage controlled small signal switch  

● Low input Capacitance  

● Fast Switching Speed  

● Low Input / Output Leakage  

Applications  

● Battery operated systems  

● Solid-state relays  

● Direct logic-level interface

：

TTL/CMOS  

Absolute Maximum Ratings

(T =25

℃

unless otherwise noted)  

■

A

Parameter  

Symbol  

Limit  

50  

Unit  

V

Drain-source Voltage  

Gate-source Voltage  

Drain Current  

V

DS  

V

GS  

±

20  

V

T

A

=25

℃

@ Steady State  

T

A

=70

℃

@ Steady State  

340  

272  

I

D  

mA  

A

Pulsed Drain Current

A  

Total Power Dissipation @ T

A

=25

℃  

I

DM  

1.5  

150  

P

D  

mW  

℃

/

W  

℃

Thermal Resistance Junction-to-Ambient @ Steady State

B  

Junction and Storage Temperature Range  

R

θJA  

833  

T

J

,T

STG  

-55

～

+150  

Ordering Information

(Example)  

■

PACKING  

PREFERED P/N  

MINIMUM  

PACKAGE(pcs)  

INNER BOX  

QUANTITY(pcs)  

OUTER CARTON  

QUANTITY(pcs)  

Marking  

DELIVERY MODE  

CODE  

BSS138W  

F2  

SS.  

3000  

30000  

120000  

7“ reel  

1 / 6  

S-E033  

Rev.3.0,08-Mar-20  

Yangzhou Yangjie Electronic Technology Co., Ltd.  

BSS138W  

Electrical Characteristics

(T =25

℃

unless otherwise noted)  

■

J

Parameter  

Symbol  

Conditions  

Min  

Typ  

Max  

Units  

Static Parameter  

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

BV

DSS  

V

GS

= 0V, I

D

=250μA  

V

DS

=50V,V

GS

=0V  

50  

V

I

DSS  

1

μA  

nA  

nA  

V

I

GSS1  

I

GSS2  

V

GS(th)  

V

GS

=

±

20V, V

DS

=0V  

V

GS

=

±

10V, V

DS

=0V  

V

DS

= V

GS

, I

D

=250μA  

V

GS

= 10V, I

D

=300mA  

V

GS

= 4.5V, I

D

=200mA  

I

S

=300mA,V

GS

=0V  

±

100  

±

50  

1.6  

Gate-Body Leakage Current  

Gate Threshold Voltage  

0.8  

1.2  

1.1  

1.2  

2.5  

Static Drain-Source On-Resistance  

R

DS(ON)  

Ω

3.0  

Diode Forward Voltage  

Maximum Body-Diode Continuous Current  

Dynamic Parameters  

Input Capacitance  

V

SD  

1.2  

V

I

S  

340  

mA  

C

iss  

C

oss  

C

rss  

28.5  

2.7  

Output Capacitance  

V

DS

=25V,V

GS

=0V,f=1MHZ  

pF  

nC  

ns  

Reverse Transfer Capacitance  

Switching Parameters  

T

o

tal Gate Charge  

1.78  

Q

g  

Q

gs  

Q

gd  

Q

rr  

t

rr  

1.7  

0.4  

Gate-Source Charge  

Gate-Drain Charge  

V

GS

=10V,V

DS

=25V,I

D

=0.3A  

I

F

=0.3A, di/dt=-100A/us  

0.24  

2.65  

12.2  

2.6  

Reverse Recovery Charge  

Reverse Recovery Time  

Turn-on Delay Time  

t

D(on)  

Turn-on Rise Time  

t

r  

18.8  

9.7  

V

GS

=10V,V

DD

=25V, I

D

=300mA,  

R

GEN

=6Ω  

Turn-off Delay Time  

t

D(off)  

Turn-off fall Time  

t

f  

47  

A. Pulse Test: Pulse Width

≤

300us,Duty cycle

≤

2%.  

B. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch.  

2 / 6  

S-E033  

Rev.3.0,08-Mar-20  

Yangzhou Yangjie Electronic Technology Co., Ltd.  

BSS138W  

■ Typical Performance Characteristics  

Figure1. Output

 

Characteristics  

Figure2. Transfer

 

Characteristics  

Figure3. Capacitance

 

Characteristics  

Figure4. Gate Charge  

Figure5. Drain-Source on Resistance  

Figure6. Drain-Source on Resistance  

3 / 6  

S-E033  

Rev.3.0,08-Mar-20  

Yangzhou Yangjie Electronic Technology Co., Ltd.  

BSS138W  

Figure7. Safe Operation Area  

Figure8. Switching wave  

4 / 6  

S-E033  

Rev.3.0,08-Mar-20  

Yangzhou Yangjie Electronic Technology Co., Ltd.  

BSS138W  

■

SOT-323 Package

 

information  

5 / 6  

S-E033  

Rev.3.0,08-Mar-20  

Yangzhou Yangjie Electronic Technology Co., Ltd.  

BSS138W  

Disclaimer  

The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the  

right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design  

or otherwise.  

The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with  

equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as  

medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety  

devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use  

of sale.  

This publication supersedes & replaces all information previously supplied. For additional information, please visit our website  

http://

, or consult your nearest Yangjie’s sales office for further assistance.  

6 / 6  

S-E033  

Rev.3.0,08-Mar-20  

Yangzhou Yangjie Electronic Technology Co., Ltd.